In Situ Monitoring of Atomic Layer Controlled Pore Reduction in Alumina Tubular Membranes Using Sequential Surface Reactions

1998 ◽  
Vol 10 (12) ◽  
pp. 3941-3950 ◽  
Author(s):  
B. S. Berland ◽  
I. P. Gartland ◽  
A. W. Ott ◽  
S. M. George
Keyword(s):  
Surface Reactions ◽  
Atomic Layer ◽  
In Situ Monitoring ◽  
Tubular Membranes

In Situ Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals

2019 ◽  
Vol 11 (40) ◽  
pp. 37263-37269 ◽  
Author(s):  
Kazuya Nakane ◽  
René H. J. Vervuurt ◽  
Takayoshi Tsutsumi ◽  
Nobuyoshi Kobayashi ◽  
Masaru Hori
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Plasma ◽  
Surface Reactions ◽  
Atomic Layer ◽  
In Situ Monitoring ◽  
Atomic Layer Etching

Optical in situ monitoring of plasma-enhanced atomic layer deposition process

2018 ◽  
Vol 57 (6S2) ◽  
pp. 06JF05 ◽  
Author(s):  
Muhammad Zeeshan Arshad ◽  
Kyung Jae Jo ◽  
Hyun Gi Kim ◽  
Sang Jeen Hong
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Process ◽  
In Situ Monitoring ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition

Comparative Study on in-situ Ellipsometric Monitoring of III-Nitride Film Growth via Plasma-Enhanced Atomic Layer Deposition

2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940020
Author(s):  
Adnan Mohammad ◽  
Deepa Shukla ◽  
Saidjafarzoda Ilhom ◽  
Brian Willis ◽  
Ali Kemal Okyay ◽  
...  
Keyword(s):  
Growth Rate ◽  
Real Time ◽  
Film Growth ◽  
Atomic Layer ◽  
Layer Growth ◽  
In Situ Monitoring ◽  
Rf Plasma ◽  
Nitride Film ◽  
The Impact

In this paper a comparative in-situ ellipsometric analysis is carried out on plasma-assisted ALD-grown III-nitride (AlN, GaN, and InN) films. The precursors used are TMA, TMG, and TMI for AlN, GaN, and InN respectively, while Ar is used as purge gas. For all of the films N2/H2/Ar plasma was used as the co-reactant. The work includes real-time in-situ monitored saturation curves, unit ALD cycle analysis, and >500 cycle film growth runs. In addition, the films are grown at different substrate temperatures to observe the impact of temperature not only on the growth rate but on how it influenced the precursor chemisorption, ligand removal, and nitrogen incorporation surface reactions. All three nitride films confirm fairly linear growth character. The growth rate per cycle (GPC) for each film is also measured with respect to rf-plasma power to obtain the surface saturation conditions during ALD growth. The real-time in-situ monitoring of the film growth can really be beneficial to understand the atomic layer growth and film formation in each individual ALD cycle.

In situ study of surface reactions of atomic layer deposited LaxAl2−xO3 films on atomically clean In0.2Ga0.8As

2008 ◽  
Vol 93 (17) ◽  
pp. 172907 ◽  
Author(s):  
F. S. Aguirre-Tostado ◽  
M. Milojevic ◽  
B. Lee ◽  
J. Kim ◽  
R. M. Wallace
Keyword(s):  
Surface Reactions ◽  
Atomic Layer ◽  
In Situ Study

Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry

2002 ◽  
Author(s):  
Yoshishige Tsuchiya ◽  
Masato Endoh ◽  
Masatoshi Kurosawa ◽  
Raymond T. Tung ◽  
Takeo Hattori ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
In Situ Monitoring ◽  
Layer By Layer ◽  
Dielectric Thin Films ◽  
High K ◽  
High K Dielectric
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