Mechanism of Self-catalytic Atomic Layer Deposition of Silicon Dioxide Using 3-Aminopropyl Triethoxysilane, Water, and Ozone

2011 ◽  
Vol 23 (9) ◽  
pp. 2312-2316 ◽  
Author(s):  
Vikrant R. Rai ◽  
Sumit Agarwal
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Dioxide ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Low temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties

2010 ◽  
Vol 107 (6) ◽  
pp. 064314 ◽  
Author(s):  
D. Hiller ◽  
R. Zierold ◽  
J. Bachmann ◽  
M. Alexe ◽  
Y. Yang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Silicon Dioxide ◽  
Material Properties ◽  
Atomic Layer ◽  
Layer Deposition

A novel approach for fabrication of bismuth-silicon dioxide core-shell structures by atomic layer deposition

2009 ◽  
Vol 19 (38) ◽  
pp. 7050 ◽  
Author(s):  
Jongmin Lee ◽  
Shadyar Farhangfar ◽  
Renbin Yang ◽  
Roland Scholz ◽  
Marin Alexe ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Dioxide ◽  
Atomic Layer ◽  
Shell Structures ◽  
Core Shell ◽  
Novel Approach ◽  
Layer Deposition

Atomic Layer Deposition of Silicon Dioxide Using Aminosilanes Di-sec-butylaminosilane and Bis(tert-butylamino)silane with Ozone

2016 ◽  
Vol 120 (20) ◽  
pp. 10927-10935 ◽  
Author(s):  
Luis Fabián Peña ◽  
Charith E. Nanayakkara ◽  
Anupama Mallikarjunan ◽  
Haripin Chandra ◽  
Manchao Xiao ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Dioxide ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Electrostatic Supercapacitors by Atomic Layer Deposition on Nanoporous Anodic Alumina Templates for Environmentally Sustainable Energy Storage

Coatings ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 403 ◽  
Author(s):  
Luis Fernández-Menéndez ◽  
Ana González ◽  
Víctor Vega ◽  
Víctor de la Prida
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Dioxide ◽  
Atomic Layer ◽  
Dielectric Materials ◽  
Anodic Alumina ◽  
Layer By Layer ◽  
Nanoporous Anodic Alumina ◽  
Low Leakage ◽  
Layer Deposition ◽  
Anodic Alumina Templates

In this work, the entire manufacturing process of electrostatic supercapacitors using the atomic layer deposition (ALD) technique combined with the employment of nanoporous anodic alumina templates as starting substrates is reported. The structure of a usual electrostatic capacitor, which comprises a top conductor electrode/the insulating dielectric layer/and bottom conductor electrode (C/D/C), has been reduced to nanoscale size by depositing layer by layer the required materials over patterned nanoporous anodic alumina membranes (NAAMs) by employing the ALD technique. A thin layer of aluminum-doped zinc oxide, with 3 nm in thickness, is used as both the top and bottom electrodes’ material. Two dielectric materials were tested; on the one hand, a triple-layer made by a successive combination of 3 nm each layers of silicon dioxide/titanium dioxide/silicon dioxide and on the other hand, a simple layer of alumina, both with 9 nm in total thickness. The electrical properties of these capacitors are studied, such as the impedance and capacitance dependences on the AC frequency regime (up to 10 MHz) or capacitance (180 nF/cm2) on the DC regime. High breakdown voltage values of 60 V along with low leakage currents (0.4 μA/cm2) are also measured from DC charge/discharge RC circuits to determine the main features of the capacitors behavior integrated in a real circuit.

New substances for atomic-layer deposition of silicon dioxide

1995 ◽  
Vol 187 ◽  
pp. 66-69 ◽  
Author(s):  
S. Morishita ◽  
W. Gasser ◽  
K. Usami ◽  
M. Matsumura
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Dioxide ◽  
Atomic Layer ◽  
Layer Deposition

Cyclic azasilanes as volatile and reactive precursors for atomic layer deposition of silicon dioxide

2016 ◽  
Vol 4 (18) ◽  
pp. 4034-4039 ◽  
Author(s):  
Ling Ju ◽  
Nicholas C. Strandwitz
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Dioxide ◽  
Atomic Layer ◽  
Temperature Range ◽  
Layer Deposition

A suite of four volatile aminosilanes, cyclic azasilanes, was used to deposit silicon dioxide (SiO2) films by atomic layer deposition (ALD) over the temperature range 100–300 °C by reaction with O3.

Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor

2018 ◽  
Vol 660 ◽  
pp. 572-577 ◽  
Author(s):  
Donghyuk Shin ◽  
Heungseop Song ◽  
Minhyeong Lee ◽  
Heungsoo Park ◽  
Dae-Hong Ko
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Silicon Dioxide ◽  
Atomic Layer ◽  
Silicon Dioxide Films ◽  
Layer Deposition
Sign in / Sign up

Export Citation Format

Share Document