Large Area Ordering at Room Temperature in Thin Films of Poly(isoprene-block-ferrocenylsilane)s for Nanofabrication

2005 ◽  
Vol 17 (6) ◽  
pp. 1275-1278 ◽  
Author(s):  
Monique Roerdink ◽  
Mark A. Hempenius ◽  
G. Julius Vancso
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Large Area

Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering on Mylar Substrates at Room Temperature

2001 ◽  
Vol 685 ◽  
Author(s):  
Elvira Fortunato ◽  
Patrícia Nunes ◽  
António Marques ◽  
Daniel Costa ◽  
Hugo Águas ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Low Cost ◽  
Substrate Surface ◽  
Hexagonal Wurtzite Structure ◽  
Oxide Thin Films ◽  
Large Area ◽  
Axis Orientation

AbstractAluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×10−2 ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.

Room temperature current modulation in large area electronic junctions of spin crossover thin films

2018 ◽  
Vol 112 (1) ◽  
pp. 013301 ◽  
Author(s):  
Victoria Shalabaeva ◽  
Karl Ridier ◽  
Sylvain Rat ◽  
Maria D. Manrique-Juarez ◽  
Lionel Salmon ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Spin Crossover ◽  
Large Area ◽  
Current Modulation ◽  
Electronic Junctions

scholarly journals Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD

RSC Advances ◽  
2020 ◽  
Vol 10 (34) ◽  
pp. 19936-19942 ◽  
Author(s):  
Martino Rimoldi ◽  
Raimondo Cecchini ◽  
Claudia Wiemer ◽  
Alessio Lamperti ◽  
Emanuele Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Antimony Telluride ◽  
Large Area ◽  
Metalorganic Chemical

Highly oriented antimony telluride thin films are prepared by room temperature metalorganic chemical vapor deposition on Si(111).

Lattice imaging of Pd2Si thin films

1978 ◽  
Vol 36 (1) ◽  
pp. 304-305
Author(s):  
T.S. Kuan ◽  
K.N. Tu
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Structural Information ◽  
Electrical Characteristics ◽  
Orientation Relationships ◽  
Lattice Imaging ◽  
Large Area ◽  
Si Films

Thin films of near-noble metal silicide such as Pd2Si and PtSi are now being used as rectifying and ohmic contacts in high performance Si devices. These silicides are made by depositing and annealing the metals on Si. The substrate temperature and orientation and the annealing condition can affect the microstructure of the silicide (1) and in turn change the electrical characteristics of the contact.This study attempts to show that detailed structural information about thin Pd2Si films can be obtained from lattice imaging technique. We chose the Pd2Si because it has a hexogonal structure (2) and grows epitaxially on (111) Si with the orientation relationships:(001)Pd2Si // (111)Si and [100]Pd2Si // [110]Si. The epitaxially-grown film will provide a large area or the single crystal Pd2Si for lattice imaging.The Si wafers used were n-type, 10 to 20 Ω-cm, (111) oriented, and HF etched before deposition. The deposition of Pd film of 100Å was carried out by e-beam evaporation at a rate of ∼5Å/sec. in a vacuum of 2x10-7 torr onto room temperature substrates.

Epitaxial growth and room-temperature ferromagnetism of quasi-2D layered Cr4Te5thin film

2022 ◽  
Author(s):  
Jing Wang ◽  
Weiyuan Wang ◽  
Jiyu Fan ◽  
Huan Zheng ◽  
Hao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Large Scale ◽  
Room Temperature ◽  
Magnetic Measurements ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Interactions ◽  
Large Area ◽  
Easy Magnetization ◽  
Mean Field Model

Abstract Large-scale growth of two-dimensional (2D) ferromagnetic thin films will provide an ideal platform for studying 2D magnetism and active spintronic devices. However, controllable growth of 2D ferromagnets over large areas faces tremendous challenges. Herein, we report a large-area growth of 2D ferromagnetic single-crystal thin films Cr4Te5 on Al2O3 (0001) substrates using pulsed laser deposition. X-ray diffraction patterns and atomic force microscopy detection confirm that all thin films are high quality epitaxy together with atom-level smooth. Magnetic measurements show the persistence of ferromagnetic ordering state up to above room temperature, with a Curie temperature 320 K, atomic magnetic moment 0.307µB/Cr, and the easy-magnetization axis in film plane. Comparing bulk Cr4Te5 single-crystal, the critical exponent β=0.491 indicates that the magnetic interactions of thin film obey mean-field model rather than 3D Heisenberg model. This work will open a avenue for growing large-scale 2D ferromagnet and developing room temperature 2D magnet-based nanodevices.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

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