Vapor Deposition of Metal Oxides and Silicates:  Possible Gate Insulators for Future Microelectronics

2001 ◽  
Vol 13 (8) ◽  
pp. 2463-2464 ◽  
Author(s):  
Roy G. Gordon ◽  
Jill Becker ◽  
Dennis Hausmann ◽  
Seigi Suh
Keyword(s):  
Metal Oxides ◽  
Vapor Deposition ◽  
Gate Insulators

ChemInform Abstract: Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics.

ChemInform ◽  
2010 ◽  
Vol 32 (47) ◽  
pp. no-no
Author(s):  
Roy G. Gordon ◽  
Jill Becker ◽  
Dennis Hausmann ◽  
Seigi Suh
Keyword(s):  
Metal Oxides ◽  
Vapor Deposition ◽  
Gate Insulators

scholarly journals Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP

1991 ◽  
Vol 70 (8) ◽  
pp. 4366-4370 ◽  
Author(s):  
A. Bath ◽  
P. J. van der Put ◽  
J. G. M. Becht ◽  
J. Schoonman ◽  
B. Lepley
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gate Insulators

P-110: Organic TFT Using Polymerized Gate Insulators by Vapor-Deposition Polymerization

2004 ◽  
Vol 35 (1) ◽  
pp. 690
Author(s):  
Sang-Woo Pyo ◽  
Dong-Hyun Lee ◽  
Jae-Hoon Shim ◽  
Young-Kwan Kim
Keyword(s):  
Vapor Deposition ◽  
Gate Insulators

Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

2001 ◽  
Vol 48 (10) ◽  
pp. 2348-2356 ◽  
Author(s):  
Tiezhong Ma ◽  
S.A. Campbell ◽  
R. Smith ◽  
N. Hoilien ◽  
Boyong He ◽  
...  
Keyword(s):  
Metal Oxides ◽  
High Permittivity ◽  
Gate Insulators ◽  
Metal Nitrates

Search for New High-κ Dielectrics by Combinatorial Chemical Vapor Deposition

2003 ◽  
Vol 765 ◽  
Author(s):  
Bin Xia ◽  
Ryan Smith ◽  
Fang Chen ◽  
Stephen A. Campbell ◽  
Wayne L. Gladfelter
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxides ◽  
Vapor Deposition ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Film Composition ◽  
Metal Nitrates ◽  
Ternary Metal ◽  
The Given

AbstractTo develop a high-κ gate dielectric for replacing SiO2 in MOSFETs, multi-component metal oxides could have advantages over single metal oxides because they may offer higher dielectric constants (κ's) as well as other favorable properties. To find the film composition for obtaining a good dielectric from the given component oxides is a time-consuming and costly process for multi-component systems. Recently, we reported a combinatorial chemical vapor deposition (CVD) technique to deposit compositional spreads of ternary metal-oxides for high-κ dielectrics. In this work, compositional spreads of ZrO2, TiO2, SnO2 and HfO2 were deposited using anhydrous metal nitrates. By measuring chemical composition, film thickness, and electrical properties, we are able to map κ and establish its dependence on film composition. This high-throughput deposition technique allows us to generate a compositional library quickly for screening material properties. In addition, a crystalline phase which does not exist in any of the four pure oxides, α-PbO2, was detected.

scholarly journals Controllable TiO2 coating on the nickel-rich layered cathode through TiCl4 hydrolysis via fluidized bed chemical vapor deposition

RSC Advances ◽  
2019 ◽  
Vol 9 (31) ◽  
pp. 17941-17949
Author(s):  
Xinxin Li ◽  
Hebang Shi ◽  
Bo Wang ◽  
Na Li ◽  
Liqiang Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxides ◽  
Fluidized Bed ◽  
Vapor Deposition ◽  
Surface Coating ◽  
Chemical Vapor ◽  
Tio2 Coating ◽  
Capacity Retention

Surface coating of metal oxides is an effective approach for enhancing the capacity retention of a nickel-rich layered cathode.

Organic Thin-Film Transistors Based on Vapor-Deposition Polymerized Gate Insulators

2005 ◽  
Vol 44 (1B) ◽  
pp. 652-655 ◽  
Author(s):  
S. W. Pyo ◽  
D. H. Lee ◽  
J. R. Koo ◽  
J. H. Kim ◽  
J. H. Shim ◽  
...  
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Gate Insulators

Synthesis and Modeling of Uniform Complex Metal Oxides by Close-Proximity Atmospheric Pressure Chemical Vapor Deposition

2015 ◽  
Vol 7 (20) ◽  
pp. 10684-10694 ◽  
Author(s):  
Robert L. Z. Hoye ◽  
David Muñoz-Rojas ◽  
Kevin P. Musselman ◽  
Yana Vaynzof ◽  
Judith L. MacManus-Driscoll
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxides ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Complex Metal ◽  
Close Proximity ◽  
Complex Metal Oxides ◽  
Pressure Chemical
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