P-110: Organic TFT Using Polymerized Gate Insulators by Vapor-Deposition Polymerization

2004 ◽  
Vol 35 (1) ◽  
pp. 690
Author(s):  
Sang-Woo Pyo ◽  
Dong-Hyun Lee ◽  
Jae-Hoon Shim ◽  
Young-Kwan Kim
Keyword(s):  
Vapor Deposition ◽  
Gate Insulators

scholarly journals Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP

1991 ◽  
Vol 70 (8) ◽  
pp. 4366-4370 ◽  
Author(s):  
A. Bath ◽  
P. J. van der Put ◽  
J. G. M. Becht ◽  
J. Schoonman ◽  
B. Lepley
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gate Insulators

Vapor Deposition of Metal Oxides and Silicates:  Possible Gate Insulators for Future Microelectronics

2001 ◽  
Vol 13 (8) ◽  
pp. 2463-2464 ◽  
Author(s):  
Roy G. Gordon ◽  
Jill Becker ◽  
Dennis Hausmann ◽  
Seigi Suh
Keyword(s):  
Metal Oxides ◽  
Vapor Deposition ◽  
Gate Insulators

Organic Thin-Film Transistors Based on Vapor-Deposition Polymerized Gate Insulators

2005 ◽  
Vol 44 (1B) ◽  
pp. 652-655 ◽  
Author(s):  
S. W. Pyo ◽  
D. H. Lee ◽  
J. R. Koo ◽  
J. H. Kim ◽  
J. H. Shim ◽  
...  
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Gate Insulators

ChemInform Abstract: Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics.

ChemInform ◽  
2010 ◽  
Vol 32 (47) ◽  
pp. no-no
Author(s):  
Roy G. Gordon ◽  
Jill Becker ◽  
Dennis Hausmann ◽  
Seigi Suh
Keyword(s):  
Metal Oxides ◽  
Vapor Deposition ◽  
Gate Insulators

High Capacitance, Photo-Patternable Ion Gel Gate Insulators Compatible with Vapor Deposition of Metal Gate Electrodes

2014 ◽  
Vol 6 (21) ◽  
pp. 19275-19281 ◽  
Author(s):  
Jae-Hong Choi ◽  
Yuanyan Gu ◽  
Kihyon Hong ◽  
Wei Xie ◽  
C. Daniel Frisbie ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
High Capacitance ◽  
Gate Insulators ◽  
Gate Electrodes ◽  
Ion Gel
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