2-Methyl-1-hexen-3-yne Lewis Base Stabilized β-Diketonate Copper(I) Complexes:  X-ray Structures, Theoretical Study, and Low-Temperature Chemical Vapor Deposition of Copper Metal

2001 ◽  
Vol 13 (11) ◽  
pp. 3993-4004 ◽  
Author(s):  
T.-Y. Chen ◽  
J. Vaissermann ◽  
E. Ruiz ◽  
J. P. Sénateur ◽  
P. Doppelt
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Lewis Base ◽  
Copper Metal ◽  
X Ray

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalytic Chemical Vapor Deposition ◽  
Sio2 Films ◽  
X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

Synthesis of GaN Nanoparticles by DC Plasma Enhanced Chemical Vapor Deposition

2013 ◽  
Vol 829 ◽  
pp. 897-901 ◽  
Author(s):  
Mahdi Gholampour ◽  
Amir Abdollah-Zadeh ◽  
Reza Poursalehi ◽  
Leila Shekari
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitrogen Vacancy ◽  
Direct Reaction ◽  
Sem Images ◽  
Nanoparticle Deposition ◽  
X Ray ◽  
Preferred Direction

The unique optical properties of nanostructured GaN basically, turn it as a very important part of many electronic and optoelectronic devices such as high power transistors, UV detectors, solar cells, lasers and blue LED. The aim of the current study is GaN nanoparticle deposition at low temperature in preferred direction. In this work, GaN nanoparticles were prepared using direct current plasma enhanced chemical vapor deposition (DC-PECVD) method on Si (100) wafer as a substrate at 700°C. Gallium metal and nitrogen plasma were used as precursors. GaN nanoparticles were grown based on the direct reaction between gallium atoms and excited nitrogen species in the plasma. Structural and morphological characterizations of GaN nanoparticles were carried out using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and field emissions electron microscopy (FE-SEM). Preferred (100) direction of GaN nanostructures which obtained by careful control of processing parameters, were revealed by XRD. FE-SEM images show the average diameter of nanoparticles is 37 nm. The EDS results show the Ga to N ratio in the sample was 8.8 to 1.2 by weight which is very close to the Ga to N ratio of prefect GaN crystal. The deviance is related to the nitrogen vacancy of the sample. These results demonstrate a simple inexpensive method for GaN nanoparticle deposition at low temperature which is critical for many of applications.

Low Temperature GaN Growth on Nitridated Sapphire Using Remote Plasma Enhanced Ultrahigh Vacuum Chemical Vapor Deposition

1997 ◽  
Vol 482 ◽  
Author(s):  
Dong-Jun Kim ◽  
Kyoung-Kook Kim ◽  
Jong-Sik Paek ◽  
Min-Su Yi ◽  
Do-Young Noh ◽  
...  
Keyword(s):  
Absorption Spectrum ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Rocking Curve ◽  
X Ray ◽  
Nitridation Time ◽  
Nir Absorption

AbstractGaN epitaxial thin films were grown on a nitridated sapphire at low temperature (550°C) using remote plasma enhanced ultrahigh vacuum chemical vapor deposition system and these films were investigated by Rutherford backscattering spectroscopy (RBS), X-ray diffraction(XRD) θ-rocking technique and the Ultraviolet-Visible-Nearinfrared (UV-VIS-NIR) absorption spectrum. The FWHM of the X-ray θ-rocking curve was about 0.4 degree using the (0002) reflection from the GaN layer with 5000Å thickness grown on the nitridated sapphire. An analysis of XRD and the UV-VIS-NIR absorption spectrum showed that the crystalline and optical qualities of GaN are dependent on the nitridation time of the sapphire even at low temperature when a plasma source is used for nitridation. This means that the density of protrusion, which is formed by a relaxation of the elastic energy caused by the lattice difference between the sapphire and AlxO1-xN, with the sapphire nitridation time plays a key role in the crystalline and optical properties of grown GaN films. The RBS channeling data and the FWHM value of the θ-rocking curve for GaNr(0002) also indicated that the truncated hexagonals are tilted towards each other. These results showed that the GaN epitaxial film can be successfully grown on nitridated sapphire by RPE-UHVCVD even at low temperature.

scholarly journals Stability of SiNx Prepared by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3363
Author(s):  
Chi Zhang ◽  
Majiaqi Wu ◽  
Pengchang Wang ◽  
Maoliang Jian ◽  
Jianhua Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Environmental Stability ◽  
X Ray ◽  
Flexible Devices ◽  
Infrared Reflection

In this paper, the environmental stability of silicon nitride (SiNx) films deposited at 80 °C by plasma-enhanced chemical vapor deposition was studied systematically. X-ray photoelectron spectroscopy and Fourier transform infrared reflection were used to analyze the element content and atomic bond structure of the amorphous SiNx films. Variation of mechanical and optical properties were also evaluated. It is found that SiNx deposited at low temperature is easily oxidized, especially at elevated temperature and moisture. The hardness and elastic modulus did not change significantly with the increase of oxidation. The changes of the surface morphology, transmittance, and fracture extensibility are negligible. Finally, it is determined that SiNx films deposited at low-temperature with proper processing parameters are suitable for thin-film encapsulation of flexible devices.

Novel Antimony Precursors for Low-Temperature CVD of Antimonide Thin Films

1997 ◽  
Vol 495 ◽  
Author(s):  
Michael A. Todd ◽  
Gautam Bhandari ◽  
T. H. Baum
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Rates ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Lewis Base ◽  
Stable Carbon ◽  
Deuterium Substitution

ABSTRACTVolatile antimony precursors were synthesized for the low temperature chemical vapor deposition (CVD) of antimony thin films. The molecules synthesized include tris (trifluoromethyl)stibine, Sb(CF3)3, Lewis base adducts of Sb(CF3)3, and antimony trihydride (stibine), SbH3. Isotopie substitution of stibine with deuterium leads to a more thermally stable, carbon-free antimony source. Similarly, deuterium substitution of trimethylsilylmethyl antimony dihydride leads to a stabilized liquid antimony precursor. The molecules were characterized using FTIR, NMR and DSC / TGA. Pure antimony films were deposited at temperatures below 300 °C with growth rates approaching 170 Å / min using a low pressure hot-wall CVD reactor. The films were characterized using XRD, EDS, SEM and AFM.

The Low-Temperature Metal-Organic Chemical Vapor Deposition (Ltmocvd) Route to Amorphous Silicon Semiconductors

1990 ◽  
Vol 192 ◽  
Author(s):  
Aain E. Kaloyeros ◽  
James W. Corbett ◽  
Paul J. Tobcano ◽  
Richard B. Rizk
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTPreliminary results are presented for a new approach proposed by the present investigators to solve the problem of light-induced degradation in amorphous silicon semiconductors. The approach uses low-temperature metal-organic chemical vapor deposition (LTMOCVD) of tailored organometallic precursors. The precursors employed are non-toxic, non-hazardous and easy to handle. In the present paper, a-Si:H films were grown, using argon with various hydrogen concentrations as carrier gas, in a cold-wall CVD reactor at a reactor pressure of 1-10 torr and substrate temperature in the range 300–450°C. Characterization studies were performed using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and extended electron-energy-loss fine structure spectroscopy (EXELFS). The results of these studies showed that the films were uniform, continuous, adherent and highly pure--contaminant levels were below the detection limits of XPS. In addition, EXELFS results showed that short-range order (SRO), consisting of the same tetrahedral coordinated units found in crystalline silicon, does exist in all the amorphous samples, regardless of hydrogen concentration. However, the degree of stuctural disorder in the silicon local tetrahedral units decreased as hydrogen was added.

Low-temperature metalorganic chemical vapor deposition of Al2O3 for advanced complementary metal-oxide semiconductor gate dielectric applications

2003 ◽  
Vol 18 (8) ◽  
pp. 1868-1876 ◽  
Author(s):  
Spyridon Skordas ◽  
Filippos Papadatos ◽  
Guillermo Nuesca ◽  
John J. Sullivan ◽  
Eric T. Eisenbraun ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Nuclear Reaction Analysis ◽  
X Ray ◽  
Metalorganic Chemical

A low-temperature metalorganic chemical vapor deposition process was developed and optimized, using a design of experiments approach, for the growth of ultrathin aluminum oxide (Al2O3) as a potential gate dielectric in emerging semiconductor device applications. The process used the aluminum β-diketonate metalorganic precursor [aluminum(III) 2,4-pentanedionate] and water as, respectively, the metal and oxygen source reactants to grow Al2O3 films over a temperature range from 250 to 450 °C. The resulting films were analyzed by x-ray photoelectron spectroscopy, x-ray diffraction measurements, Rutherford backscattering spectrometry, nuclear-reaction analysis for hydrogen profiling, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. The as-deposited Al2O3 phase was amorphous and dense and exhibited carbon and hydrogen incorporation of, respectively, 1 and 10 at.%. Postannealing at 600 °C led to a reduction in hydrogen concentration to 1 at.%, while maintaining an amorphous Al2O3 matrix.

Sign in / Sign up

Export Citation Format

Share Document