Synthesis of Reflective Polyimide Films via in Situ Silver(I) Reduction

1995 ◽  
Vol 7 (11) ◽  
pp. 2171-2180 ◽  
Author(s):  
Robin E. Southward ◽  
D. Scott Thompson ◽  
David W. Thompson ◽  
Maggie L. Caplan ◽  
Anne K. St. Clair
Keyword(s):  
Polyimide Films

Synthesis of Surface-Metallized Polyimide Films via in Situ Reduction of (Perfluoroalkanoato)silver(I) Complexes in a Poly(amic acid) Precursor

1998 ◽  
Vol 10 (5) ◽  
pp. 1408-1421 ◽  
Author(s):  
Robin E. Southward ◽  
Christopher M. Boggs ◽  
David W. Thompson ◽  
Anne K. St. Clair
Keyword(s):  
Amic Acid ◽  
In Situ Reduction ◽  
Polyimide Films ◽  
Acid Precursor

Reflective and conductive surface silvered polyimide films prepared via in-situ technique using copolyimide as matrix

Polymer ◽  
2006 ◽  
Vol 47 (9) ◽  
pp. 3150-3156 ◽  
Author(s):  
Sheng-Li Qi ◽  
De-Zhen Wu ◽  
Zhan-Peng Wu ◽  
Wen-Cai Wang ◽  
Ri-Guang Jin
Keyword(s):  
Polyimide Films ◽  
Conductive Surface ◽  
In Situ Technique

In situ generated hydroxyl-terminated polybutadiene nanoparticles in polyimide films

2009 ◽  
Vol 28 (1) ◽  
pp. 48-59 ◽  
Author(s):  
Anand Kumar Gupta ◽  
S. K. Kurmvanshi ◽  
R. Bajpai ◽  
J. M. Keller
Keyword(s):  
Polyimide Films

Electrical Properties Of Thin Polyimide Films Prepared By Ionized Cluster Beam Deposition

1991 ◽  
Vol 227 ◽  
Author(s):  
Hyung-Jin Jung ◽  
Dong-Heon Lee ◽  
Jeon-Kook Lee ◽  
Chung-Nam Whang
Keyword(s):  
Electrical Properties ◽  
Cluster Beam ◽  
Thermal Curing ◽  
Polyimide Films ◽  
Capacitance Voltage ◽  
Silicon Structures ◽  
Clean Interface ◽  
Cluster Beam Deposition ◽  
Beam Deposition

ABSTRACTThe electrical properties of gold – polyimide - silicon structures were investigated experimentally by capacitance – voltage (C – V) measurement. Polyimide films were deposited on silicon substrate by using ionized cluster beam deposition (ICBD) of PMDA-ODA followed by in-situ thermal curing in N2 atmosphere. The resulting C – V plots show hysteresis, and it was believed to be due to the injection of carriers. The interface trap density is fairly low because of the clean interface provided by ICB technique.

scholarly journals SURFACE SILVERED BTDA/4,4'-ODA/4,4'-SDA BASED POLYIMIDE FILMS PREPARED VIA in situ SINGLE-STAGE SELF-METALLIZED TECHNIQUE

2006 ◽  
Vol 006 (2) ◽  
pp. 325-329 ◽  
Author(s):  
Fang SONG ◽  
Dezhen WU ◽  
Qian ZHANG ◽  
Shengli QI ◽  
Lizhong JIANG ◽  
...  
Keyword(s):  
Single Stage ◽  
Polyimide Films

Fabrication of Highly Reflective Composite Polyimide Films via in Situ Reduction of Matrix Constrained Silver(I)

1997 ◽  
Vol 9 (7) ◽  
pp. 1691-1699 ◽  
Author(s):  
Robin E. Southward ◽  
D. Scott Thompson ◽  
David W. Thompson ◽  
Anne K. St. Clair
Keyword(s):  
In Situ Reduction ◽  
Polyimide Films

Control of Reflectivity and Surface Conductivity in Metallized Polyimide Films Prepared via in Situ Silver(I) Reduction

1997 ◽  
Vol 9 (2) ◽  
pp. 501-510 ◽  
Author(s):  
Robin E. Southward ◽  
David W. Thompson ◽  
Anne K. St. Clair
Keyword(s):  
Surface Conductivity ◽  
Polyimide Films

Mechanical and Piezoresistive Properties of Graphite-Filled Polyimide Thin Films

1992 ◽  
Vol 276 ◽  
Author(s):  
A. Bruno Frazier ◽  
M. R. Khan ◽  
Mark G. Allen
Keyword(s):  
Thin Films ◽  
Film Stress ◽  
Polyimide Films ◽  
Film Properties ◽  
Piezoresistive Effect ◽  
Strong Function ◽  
Graphite Particles ◽  
Microelectronic Fabrication ◽  
Residual Film

ABSTRACTThe piezoresistive effect of materials is used as the basis for many types of microsensors. Polyimide, a material widely used in microelectronic fabrication, may be made to exhibit this effect by addition of small graphite particles to form a composite material. Polyimide / graphite based piezoresistive films have the advantage of being spin-castable, plasma-processable, highly chemically resistant, and thermally stable up to 400 °C in nitrogen atmospheres. In this work, piezoresistive polyimide films are formed by addition of various amounts (loadings) of graphite particles one micron in diameter or less to DuPont PI-2555 polyimide. Thin films of these materials are spin-cast on silicon wafers, and an in-situ load-deflection measurement technique is used to evaluate the following film properties: piezoresistive coefficient as a function of both strain and graphite loading; Young's modulus as a function of graphite loading; and residual film stress as a function of graphite loading. The observed piezoresistive coefficient is a strong function of graphite loading, with good piezoresistive properties exhibited in the loading range of 15–25 wt% graphite.

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