Control of Reflectivity and Surface Conductivity in Metallized Polyimide Films Prepared via in Situ Silver(I) Reduction

1997 ◽  
Vol 9 (2) ◽  
pp. 501-510 ◽  
Author(s):  
Robin E. Southward ◽  
David W. Thompson ◽  
Anne K. St. Clair
2000 ◽  
Vol 07 (05n06) ◽  
pp. 533-537 ◽  
Author(s):  
ICHIRO SHIRAKI ◽  
TADAAKI NAGAO ◽  
SHUJI HASEGAWA ◽  
CHRISTIAN L. PETERSEN ◽  
PETER BØGGILD ◽  
...  

For in-situ measurements of surface conductivity in ultrahigh vacuum (UHV), we have installed micro-four-point probes (probe spacings down to 4 μm) in a UHV scanning electron microscope (SEM) combined with scanning reflection–high-energy electron diffraction (RHEED). With the aid of piezoactuators for precise positioning of the probes, local conductivity of selected surface domains of well-defined superstructures could be measured during SEM and RHEED observations. It was found that the surface sensitivity of the conductivity measurements was enhanced by reducing the probe spacing, enabling the unambiguous detection of surface-state conductivity and the influence of surface defects on the electrical conduction.


1998 ◽  
Vol 10 (5) ◽  
pp. 1408-1421 ◽  
Author(s):  
Robin E. Southward ◽  
Christopher M. Boggs ◽  
David W. Thompson ◽  
Anne K. St. Clair

Polymer ◽  
2006 ◽  
Vol 47 (9) ◽  
pp. 3150-3156 ◽  
Author(s):  
Sheng-Li Qi ◽  
De-Zhen Wu ◽  
Zhan-Peng Wu ◽  
Wen-Cai Wang ◽  
Ri-Guang Jin

2009 ◽  
Vol 28 (1) ◽  
pp. 48-59 ◽  
Author(s):  
Anand Kumar Gupta ◽  
S. K. Kurmvanshi ◽  
R. Bajpai ◽  
J. M. Keller
Keyword(s):  

1991 ◽  
Vol 227 ◽  
Author(s):  
Hyung-Jin Jung ◽  
Dong-Heon Lee ◽  
Jeon-Kook Lee ◽  
Chung-Nam Whang

ABSTRACTThe electrical properties of gold – polyimide - silicon structures were investigated experimentally by capacitance – voltage (C – V) measurement. Polyimide films were deposited on silicon substrate by using ionized cluster beam deposition (ICBD) of PMDA-ODA followed by in-situ thermal curing in N2 atmosphere. The resulting C – V plots show hysteresis, and it was believed to be due to the injection of carriers. The interface trap density is fairly low because of the clean interface provided by ICB technique.


2006 ◽  
Vol 006 (2) ◽  
pp. 325-329 ◽  
Author(s):  
Fang SONG ◽  
Dezhen WU ◽  
Qian ZHANG ◽  
Shengli QI ◽  
Lizhong JIANG ◽  
...  
Keyword(s):  

1997 ◽  
Vol 9 (7) ◽  
pp. 1691-1699 ◽  
Author(s):  
Robin E. Southward ◽  
D. Scott Thompson ◽  
David W. Thompson ◽  
Anne K. St. Clair

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