In-Situ Regrowth and Purification by Zone Melting of Organic Single-Crystal Thin Films Yielding Significantly Enhanced Optoelectronic Properties

2000 ◽  
Vol 12 (8) ◽  
pp. 2353-2362 ◽  
Author(s):  
Chong-Yang Liu ◽  
Allen J. Bard
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Zone Melting ◽  
Optoelectronic Properties ◽  
Organic Single Crystal

Zone Melting Recrystallization of InSb Films on Oxidized Si Wafers

1983 ◽  
Vol 23 ◽  
Author(s):  
C.C. Wong ◽  
C.J. Keavney ◽  
H.A. Atwater ◽  
C.V. Thompson ◽  
H.I. Smith
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Eutectic Structure ◽  
Zone Melting ◽  
Molten Zone ◽  
Si Substrates ◽  
Novel Device ◽  
Device Structures ◽  
Insb Thin Films ◽  
Selection Of

ABSTRACTInSb thin films on oxidized Si wafers have been recrystallized using a strip heater to generate and scan a narrow molten zone across the film. Grains up to 3 × 10 mm have been produced. Crystallization proceeds in a faceted cellular fashion, the excess solute (Sb) being rejected into subboundaries which often lie along low-index crystallographic directions. A InSb-Sb eutectic structure forms at the subboundaries. The width of the single-crystal InSb between subboundaries is approximately 75 μm. The techniques of planar constriction and subboundary entrainment have been extended to InSb for the selection of single grains and the orelocation of subboundaries. This technology of producing InSb thin films on oxidized Si substrates max, be extendable to other III-V materials, and could lead to novel device structures through the integration of Si and III-V compound devices on the same substrate.

Dielectric and Electromechanical Behaviour of Relaxor [(1−x)Pb(Mg1/3Nb2/3)O3 -xPbTiO3] Thin Films

2001 ◽  
Vol 688 ◽  
Author(s):  
N.J. Donnelly ◽  
G. Catalan ◽  
C. Morros ◽  
R.M. Bowman ◽  
J.M. Gregg
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Plane Strain ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Bulk Ceramic ◽  
Atomic Force ◽  
Out Of Plane ◽  
Order Of Magnitude

AbstractThin film capacitor structures of Au / (1−x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3 /(La1/2Sr1/2)CoO3 were fabricated by pulsed laser deposition on single crystal {001} MgO substrates. Films were found to be perovskite dominated and highly {001} oriented. Dielectrically, films displayed relaxorlike features, though maximum permittivity was low compared to single crystal or bulk ceramic (∼1400 at peak @1kHz, for x=0.07, 0.1 & 0.2). A field induced piezoelectric coefficient d33 was measured by piezoresponse atomic force microscopy for specific compositions x =0, × =0.07, and x =0.1 and found to be disappointingly low - indicating poor electric field induced strain. Despite this macroscopic electrostrictive coefficients Q33 were found to be (3.6 ± 0.6) ×10−2C−2m4, (2.6 ± 0.2) ×10−2C−2m4, and (0.9 ± 0.3) ×10−2C−2m4 respectively. Crystallographic electrostrictive coefficients were determined by in-situ x-ray diffraction and found to be (4.9 ± 0.2) ×10−2C−2m4 for PMN-(0.07)PT and (1.9 ± 0.1) ×10−2C−2m4 for PMN-(0.1)PT. Considering that all these Q33 values are of the same order of magnitude as found in single crystal experiments (2.5 – 3.8 ×10−2C−2m4), it is suggested that low out-of-plane strain is entirely a result of reduced polarisability rather than reduced electrostrictive coefficients in thin films relative to bulk ceramic or single crystal. An estimate was also made of the Q13 electrostrictive coefficient for PMN and PMN-(0.07)PT by measuring permittivity as a function of applied in-plane strain. The values obtained were -1.31 ×10−2C−2m4 and -0.46 ×10−2C−2m4 respectively.

Uniform growth of SiC single crystal thin films via a metal–Si alloy flux by vapour–liquid–solid pulsed laser deposition: the possible existence of a precursor liquid flux film

CrystEngComm ◽  
2016 ◽  
Vol 18 (1) ◽  
pp. 143-148 ◽  
Author(s):  
Aomi Onuma ◽  
Shingo Maruyama ◽  
Takeshi Mitani ◽  
Tomohisa Kato ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Single Crystal ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Liquid Flux ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Interfacial Behaviour

3C-SiC single crystal films were successfully obtained in the PLD-based VLS process with a Si–Ni liquid flux, the interfacial behaviour of which was investigated by in situ high temperature laser microscopy in vacuum.

Crystal growth of (110) and (103) YBa2Cu3O7 thin films in-situ deposited by laser ablation on (110) SrTiO3 single-crystal substrates

1993 ◽  
Vol 132 (3-4) ◽  
pp. 396-404 ◽  
Author(s):  
M. Guilloux-Viry ◽  
C. Thivet ◽  
A. Perrin ◽  
M. Sergent ◽  
M.G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Laser Ablation ◽  
Single Crystal

Nano‐Ground Glass as a Superhydrophilic Template for Printing High‐Performance Organic Single‐Crystal Thin Films

2021 ◽  
pp. 2100033
Author(s):  
Tatsuyuki Makita ◽  
Yoma Ninomiya ◽  
Shohei Kumagai ◽  
Toshihiro Okamoto ◽  
Mari Sasaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
High Performance ◽  
Ground Glass ◽  
Organic Single Crystal

scholarly journals Single-crystal-like optoelectronic-properties of MAPbI3 perovskite polycrystalline thin films

2018 ◽  
Vol 6 (11) ◽  
pp. 4822-4828 ◽  
Author(s):  
Nadja Giesbrecht ◽  
Johannes Schlipf ◽  
Irene Grill ◽  
Philipp Rieder ◽  
Vladimir Dyakonov ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Crystallization Process ◽  
State Of The Art ◽  
Optoelectronic Properties ◽  
Photovoltaic Devices ◽  
Polycrystalline Thin Films ◽  
Halide Perovskites

Our understanding of the crystallization process of hybrid halide perovskites has propelled the efficiency of state-of-the-art photovoltaic devices to over 22%.

Reactions at the Titanium-Silicon Interface Studied Using Hot-Stage Tem

1992 ◽  
Vol 260 ◽  
Author(s):  
Amol Kirtikar ◽  
Robert Sinclair
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Phase Transformations ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Titanium Thin Films ◽  
Sputter Deposited ◽  
Titanium Silicon ◽  
Silicon Interface

ABSTRACTThe interaction of titanium thin films sputter-deposited onto single crystal silicon was studied by in situ heating experiments within the TEM. Reactions at the Ti-Si interface including amorphization, crystallization, allotropie phase transformations and agglomeration have been observed in real time and recorded on videotape. Interpretation of these recordings can yield a wealth of information on the silicidation process.

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