scholarly journals Single-crystal-like optoelectronic-properties of MAPbI3 perovskite polycrystalline thin films

2018 ◽  
Vol 6 (11) ◽  
pp. 4822-4828 ◽  
Author(s):  
Nadja Giesbrecht ◽  
Johannes Schlipf ◽  
Irene Grill ◽  
Philipp Rieder ◽  
Vladimir Dyakonov ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Crystallization Process ◽  
State Of The Art ◽  
Optoelectronic Properties ◽  
Photovoltaic Devices ◽  
Polycrystalline Thin Films ◽  
Halide Perovskites

Our understanding of the crystallization process of hybrid halide perovskites has propelled the efficiency of state-of-the-art photovoltaic devices to over 22%.

STUDY ON AlSb POLYCRYSTALLINE THIN FILMS PREPARED BY VACUUM CO-EVAPORATION

2011 ◽  
Vol 25 (13) ◽  
pp. 1747-1755 ◽  
Author(s):  
HUIJIN SONG ◽  
LILI WU ◽  
JIAGUI ZHENG ◽  
LIANGHUAN FENG ◽  
ZHI LEI ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Open Circuit ◽  
Photovoltaic Devices ◽  
Amorphous Thin Films ◽  
Optical Absorption Measurement ◽  
Heating And Cooling ◽  
Polycrystalline Thin Films ◽  
Bandgap Semiconductors ◽  
P Type

In this paper, the AlSb polycrystalline thin films were prepared by vacuum co-evaporation technology and their structural, optical and electrical properties have been studied. XRD results showed that the as-deposited AlSb amorphous thin films transformed to polycrystalline state after annealed in vacuum at temperatures higher than 540°C. The process of phase change was observed to depend on the annealing temperature and the film composition. Some irreversible changes took place in the annealed films during the measurement of the temperature dependence of the film conductance. The conductance activation energy of the film was 0.132 and 0.32 eV during the heating and cooling process, respectively, which suggests the decrease of Sb vacancies in the AlSb film after the heating. Hall effect and optical absorption measurement showed that the AlSb polycrystalline thin films were p-type, indirect bandgap semiconductors with absorption coefficient higher than 8 × 104 cm -1. TCO/CdS/AlSb photovoltaic devices with the local open circuit voltage of over 200 mV have been fabricated.

A high performance perovskite CH3NH3PbCl3 single crystal photodetector: benefiting from an evolutionary preparation process

2019 ◽  
Vol 7 (18) ◽  
pp. 5442-5450 ◽  
Author(s):  
Zhishuai Yuan ◽  
Wei Huang ◽  
Shoutao Ma ◽  
Gang Ouyang ◽  
Wei Hu ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Optoelectronic Properties ◽  
Preparation Process ◽  
Semiconducting Materials ◽  
Inorganic Lead ◽  
Halide Perovskites ◽  
Lead Halide

Hybrid organic–inorganic lead halide perovskites (CH3NH3PbX3, X = Cl, Br, or I) are deemed to be the highest potential semiconducting materials due to their unique optoelectronic properties.

scholarly journals Strain-activated light-induced halide segregation in mixed-halide perovskite solids

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Yicheng Zhao ◽  
Peng Miao ◽  
Jack Elia ◽  
Huiying Hu ◽  
Xiaoxia Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
Scanning Probe Microscopy ◽  
Strain Distribution ◽  
Scanning Probe ◽  
Uniaxial Pressure ◽  
Free Standing ◽  
Polycrystalline Thin Films ◽  
Halide Perovskites ◽  
Halide Perovskite

AbstractLight-induced halide segregation limits the bandgap tunability of mixed-halide perovskites for tandem photovoltaics. Here we report that light-induced halide segregation is strain-activated in MAPb(I1−xBrx)3 with Br concentration below approximately 50%, while it is intrinsic for Br concentration over approximately 50%. Free-standing single crystals of CH3NH3Pb(I0.65Br0.35)3 (35%Br) do not show halide segregation until uniaxial pressure is applied. Besides, 35%Br single crystals grown on lattice-mismatched substrates (e.g. single-crystal CaF2) show inhomogeneous segregation due to heterogenous strain distribution. Through scanning probe microscopy, the above findings are successfully translated to polycrystalline thin films. For 35%Br thin films, halide segregation selectively occurs at grain boundaries due to localized strain at the boundaries; yet for 65%Br films, halide segregation occurs in the whole layer. We close by demonstrating that only the strain-activated halide segregation (35%Br/45%Br thin films) could be suppressed if the strain is properly released via additives (e.g. KI) or ideal substrates (e.g. SiO2).

Freestanding CH3NH3PbBr3 Single-crystal Microwires for Optoelectronic Applications Synthesized with a Predefined Lattice Framework

2021 ◽  
Author(s):  
Shan-Shan YAN ◽  
Yao MA ◽  
You-Chao KONG ◽  
Ji-Zhong Jiang ◽  
Xiuhua Xie ◽  
...  
Keyword(s):  
Single Crystal ◽  
Optoelectronic Properties ◽  
Metal Halide ◽  
One Dimensional ◽  
Halide Perovskites ◽  
Optoelectronic Applications

Metal halide perovskites (MHPs) have shown unparalleled potentials for optoelectronic applications. In particular, quasi one-dimensional perovskite structures have attracted great attention due to their unique optoelectronic properties which can open...

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