Zone Melting Recrystallization of InSb Films on Oxidized Si Wafers

1983 ◽  
Vol 23 ◽  
Author(s):  
C.C. Wong ◽  
C.J. Keavney ◽  
H.A. Atwater ◽  
C.V. Thompson ◽  
H.I. Smith
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Eutectic Structure ◽  
Zone Melting ◽  
Molten Zone ◽  
Si Substrates ◽  
Novel Device ◽  
Device Structures ◽  
Insb Thin Films ◽  
Selection Of

ABSTRACTInSb thin films on oxidized Si wafers have been recrystallized using a strip heater to generate and scan a narrow molten zone across the film. Grains up to 3 × 10 mm have been produced. Crystallization proceeds in a faceted cellular fashion, the excess solute (Sb) being rejected into subboundaries which often lie along low-index crystallographic directions. A InSb-Sb eutectic structure forms at the subboundaries. The width of the single-crystal InSb between subboundaries is approximately 75 μm. The techniques of planar constriction and subboundary entrainment have been extended to InSb for the selection of single grains and the orelocation of subboundaries. This technology of producing InSb thin films on oxidized Si substrates max, be extendable to other III-V materials, and could lead to novel device structures through the integration of Si and III-V compound devices on the same substrate.

Integration of NiSi SALICIDE for Deep Submicron CMOS Technologies

1998 ◽  
Vol 514 ◽  
Author(s):  
X. W. Lin ◽  
N. Ibrahim ◽  
L. Topete ◽  
D. Pramanik
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Thermal Budget ◽  
Si Substrates ◽  
Low Thermal Budget ◽  
Lower Resistivity

ABSTRACTA NiSi-based self-aligned silicidation (SALICIDE) process has been integrated into a 0.25 Ion CMOS technology. It involves rapid thermal annealing (RTA) of Ni thin films (300, Å thick) on Si substrates in the temperature range ≈400 - 700 °C. It was found that the NiSi sheet resistance (Rs) gradually decreases with decreasing linewidth. Parameters, such as RTA temperature, substrate dopant (As vs BF2) and structure (single crystal vs poly), were found to have little effects on Rs. NiSi forms a smoother interface with single crystalSi than with poly Si, and has a slightly lower resistivity. MOSFETs based on NiSi show comparable device characteristics to those obtained with Ti SALICIDE. Upon thermal annealing, NiSi remains stable at 450 °C for more than 39 hours. The same is true for 500 °C anneals up to 6 hours, except for NiSi narrow lines (<0.5 μm) on n+ poly Si substrates whose Rs is moderately increased after a 6 hr anneal. This work demonstrates that with an appropriate low-thermal budget backend process, NiSi SALICIDE can be a viable process for deep submicron ULSI technologies.

Multiple-pass zone melting of InSb thin films

1981 ◽  
Vol 85 (3-4) ◽  
pp. 319-322 ◽  
Author(s):  
M. Oszwałdowski ◽  
H. Szweycer ◽  
T. Berus ◽  
J. Goc ◽  
M. Zimpel
Keyword(s):  
Thin Films ◽  
Zone Melting ◽  
Multiple Pass ◽  
Insb Thin Films

scholarly journals Mechanical Properties of 3C-SiC Films for MEMS Applications

2007 ◽  
Vol 1049 ◽  
Author(s):  
Jayadeep Deva Reddy ◽  
Alex A. Volinsky ◽  
Christopher L. Frewin ◽  
Chris Locke ◽  
Stephen E. Saddow
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Carbide ◽  
Plastic Deformation ◽  
Elastic Modulus ◽  
Single Crystal ◽  
Elastic Contact ◽  
Si Substrates ◽  
Sic Films

AbstractThere is a technological need for hard thin films with high elastic modulus and fracture toughness. Silicon carbide (SiC) fulfills such requirements for a variety of applications at high temperatures and for high-wear MEMS. A detailed study of the mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates was performed by means of nanoindentation using a Berkovich diamond tip. The thickness of both the single and polycrystalline SiC films was around 1-2 μm. Under indentation loads below 500 μN both films exhibit Hertzian elastic contact without plastic deformation. The polycrystalline SiC films have an elastic modulus of 457 GPa and hardness of 33.5 GPa, while the single crystalline SiC films elastic modulus and hardness were measured to be 433 GPa and 31.2 GPa, respectively. These results indicate that polycrystalline SiC thin films are more attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging.

Interactions Of Evaporated Nickel And Silicon Thin Films

1985 ◽  
Vol 54 ◽  
Author(s):  
L. R. Zheng ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Formation Temperature ◽  
Si Substrates ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Amorphous Si ◽  
The Stability

ABSTRACTInteractions of evaporated Ni and Si thin films were investigated by a combination of backseat tering spectrometry and transmission electron microscopy. The presence of amorphous Si has no significant effects on Ni2Si and NiSi formation, but it drastically lowers the formation temperature of NiSi. Experiments with evaporated thin markers established that Ni is the dominant diffusing species in the growth of the three suicides. The stability of NiSi was examined by sequential evaporation of Ni34Si66 and Ni50Si50 thin films both on Si(100) and on evaporated Si substrates. The results showed that NiSi2 grows at the expence of NiSi when the stucture is in contact with evaporated Si, while it dissociates into NiSi and Si when in contact with single crystal Si.

Stress Controlled Magneto-Mechanical Instability In Terfenol-D Thin Films

1997 ◽  
Vol 505 ◽  
Author(s):  
Quanmin Su ◽  
Y. Wen ◽  
Manfred Wuttig
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Mechanical Response ◽  
Substrate Material ◽  
Recrystallization Temperature ◽  
Mechanical Instability ◽  
Si Substrates ◽  
Different Temperatures ◽  
Film Substrate ◽  
Selection Of

ABSTRACTThe magneto-mechanical properties of Terfenol-D thin films deposited on Si substrates were studied by magnetic and mechanical measurements of film/substrate composite cantilevers. The AE effect and mechanical damping of the film were measured simultaneously. The stress in the film was controlled by annealing and deposition at different temperatures as well by the selection of the substrate material below the recrystallization temperature and determined to vary from -500 MPa, compression, in as deposited films to +480MPa, tension, in annealed films. This paper highlights the magneto-mechanical response of tensioned 1 m nanocrystalline Terfenol-D films on 50 Pim Si substrates display a pronounced damping maximum at a magnetic field of about 1.5kOe oriented perpendicular to the plane of the film. The phenomenon is critically dependent on the orientation of the magnetic field and is the result of a magneto-mechanical instability in the Terfenol film.

scholarly journals Characterization of Highly-Oriented Ferroelectric PbxBa1−x TiO3 Thin Films Grown by Metalorganic Chemical Vapor Deposition

2005 ◽  
Vol 20 (11) ◽  
pp. 2969-2976 ◽  
Author(s):  
Mohamed Y. El-Naggar ◽  
David A. Boyd ◽  
David G. Goodwin
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Domain Walls ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Domain Boundaries

PbxBa1−xTiO3 (0.2 ⩽ x ⩽ 1) thin films were deposited on single-crystal MgO as well as amorphous Si3N4/Si substrates using biaxially textured MgO buffer templates, grown by ion beam-assisted deposition (IBAD). The ferroelectric films were stoichiometric and highly oriented, with only (001) and (100) orientations evident in x-ray diffraction (XRD) scans. Films on biaxially textured templates had smaller grains (60 nm average) than those deposited on single-crystal MgO (300 nm average). Electron backscatter diffraction (EBSD) has been used to study the microtexture on both types of substrates and the results were consistent with x-ray pole figures and transmission electron microscopy (TEM) micrographs that indicated the presence of 90° domain boundaries, twins, in films deposited on single-crystal MgO substrates. In contrast, films on biaxially textured substrates consisted of small single-domain grains that were either c or a oriented. The surface-sensitive EBSD technique was used to measure the tetragonal tilt angle as well as in-plane and out-of-plane texture. High-temperature x-ray diffraction (HTXRD) of films with 90° domain walls indicated large changes, as much as 60%, in the c and a domain fractions with temperature, while such changes were not observed for PbxBa1−xTiO3 (PBT) films on biaxially textured MgO/Si3N4/Si substrates, which lacked 90° domain boundaries.

Toward non-volatile photonic memory: concept, material and design

2018 ◽  
Vol 5 (4) ◽  
pp. 641-654 ◽  
Author(s):  
Yongbiao Zhai ◽  
Jia-Qin Yang ◽  
Ye Zhou ◽  
Jing-Yu Mao ◽  
Yi Ren ◽  
...  
Keyword(s):  
Novel Device ◽  
Device Structures ◽  
Major Progress ◽  
Selection Of

This review presents the development of photonic memory, with a view towards inspiring more intriguing ideas on the elegant selection of materials and design of novel device structures that may finally induce major progress in the fabrication and application of photonic memory.

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