Seedless Synthesis and Thermal Decomposition of Single Crystalline Zinc Hydroxystannate Cubes

2009 ◽  
Vol 9 (10) ◽  
pp. 4456-4460 ◽  
Author(s):  
Gregory Wrobel ◽  
Martin Piech ◽  
Sameh Dardona ◽  
Yong Ding ◽  
Pu-Xian Gao
CrystEngComm ◽  
2012 ◽  
Vol 14 (8) ◽  
pp. 2950 ◽  
Author(s):  
Ming Wang ◽  
Xueli Cao ◽  
Yunfang Huang ◽  
Chongshen Guo ◽  
Lijun Huang ◽  
...  

2012 ◽  
Vol 14 (6) ◽  
pp. 693-697 ◽  
Author(s):  
Waheed S. Khan ◽  
Chuanbao Cao ◽  
Faheem K. Butt ◽  
Zulfiqar Ali ◽  
Ghulam Nabi ◽  
...  

2000 ◽  
Vol 15 (7) ◽  
pp. 1564-1569 ◽  
Author(s):  
Martin H. Magnusson ◽  
Knut Deppert ◽  
Jan-Olle Malm

Nanometer-sized particles of W are of interest in semiconductor device research, where such particles may store electrons inside heteroepitaxially defined structures. In this paper, we present results concerning W particles produced by thermal decomposition of tungsten hexacarbonyl. By the described method, it was possible to produce size-selected, single-crystalline W particles in the size range between 15 and 60 nm. The sintering behavior of the particles was studied between ambient temperatures and 1900 °C. The particle morphology and structure were examined with high-resolution transmission electron microscopy and electron diffraction techniques. Particles sintered at the highest temperatures typically were single crystals, with well-developed facets. Some problems concerning a yield reducing charging mechanism are discussed.


1991 ◽  
Vol 222 ◽  
Author(s):  
Takashi Fuyuki ◽  
Tatsuo Yoshinobu ◽  
Hiroyuki Matsunami

ABSTRACTA novel mechanism of atomic level control in crystal growth utilizing reconstruction of surface superstructures is proposed. We have found a distinguished feature of surface reconstruction during crystal growth of 3C-SiC using an alternate gas molecular beam supply of Si2H6 and C2H2. When Si2H6 is supplied, S atoms generated by thermal decomposition adsorb on the surface constructing superstructures. A fixed number of Si atoms forming surface superstructures can react with C2H2 yielding single crystalline 3C-SiC growth in the subsequent period, which realizes atomic level control in epitaxy of 3C-SiC. The reconstruction sequence is analyzed based on RHEED observations, and the obtained crystal quality is discussed.


CrystEngComm ◽  
2010 ◽  
Vol 12 (12) ◽  
pp. 4156 ◽  
Author(s):  
Zi Qin ◽  
Yunhua Huang ◽  
Qinyu Wang ◽  
Junjie Qi ◽  
Xiujun Xing ◽  
...  

2011 ◽  
Vol 367 (1) ◽  
pp. 158-165 ◽  
Author(s):  
Teng-Yuan Dong ◽  
Chen-Ni Chen ◽  
Hsiu-Yi Cheng ◽  
Chiao-Pei Chen ◽  
Nai-Yuan Jheng

2007 ◽  
Vol 308 (1) ◽  
pp. 99-104 ◽  
Author(s):  
YanJun Zhang ◽  
Min Guo ◽  
Mei Zhang ◽  
ChuanYu Yang ◽  
Teng Ma ◽  
...  

Nanoscale ◽  
2014 ◽  
Vol 6 (9) ◽  
pp. 4852-4856 ◽  
Author(s):  
Sen Zhang ◽  
Guangming Jiang ◽  
Gabriel T. Filsinger ◽  
Liheng Wu ◽  
Huiyuan Zhu ◽  
...  

We report a facile halide ion (Cl− or Br−) mediated synthesis of Fe nanoparticles (NPs) by thermal decomposition of Fe(CO)5.


2005 ◽  
Vol 277 (1-4) ◽  
pp. 445-449 ◽  
Author(s):  
Jianwei Zhao ◽  
Changhui Ye ◽  
Xiaosheng Fang ◽  
Peng Yan ◽  
Zhenyang Wang ◽  
...  

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