Large-Area Organic Electro-optic Single Crystalline Thin Films Grown by Evaporation-Induced Local Supersaturation with Surface Interactions

2009 ◽  
Vol 9 (5) ◽  
pp. 2512-2516 ◽  
Author(s):  
Seong-Ji Kwon ◽  
Christoph Hunziker ◽  
O-Pil Kwon ◽  
Mojca Jazbinsek ◽  
Peter Günter
Keyword(s):  
Thin Films ◽  
Surface Interactions ◽  
Large Area ◽  
Single Crystalline ◽  
Electro Optic ◽  
Local Supersaturation

Electro‐optic properties of single crystalline ferroelectric thin films

1993 ◽  
Vol 63 (5) ◽  
pp. 596-598 ◽  
Author(s):  
D. H. Reitze ◽  
E. Haton ◽  
R. Ramesh ◽  
S. Etemad ◽  
D. E. Leaird ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Single Crystalline ◽  
Electro Optic

Organic Electro-optic Single- Crystalline Thin Films Grown Directly on Modified Amorphous Substrates

2008 ◽  
Vol 20 (3) ◽  
pp. 543-545 ◽  
Author(s):  
O-P. Kwon ◽  
S.-J. Kwon ◽  
H. Figi ◽  
M. Jazbinsek ◽  
P. Günter
Keyword(s):  
Thin Films ◽  
Single Crystalline ◽  
Electro Optic ◽  
Amorphous Substrates

Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films

Nano Letters ◽  
2016 ◽  
Vol 16 (11) ◽  
pp. 6931-6938 ◽  
Author(s):  
Emily S. Walker ◽  
Seung Ryul Na ◽  
Daehwan Jung ◽  
Stephen D. March ◽  
Joon-Seok Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Large Area ◽  
Single Crystalline

Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains

2013 ◽  
Vol 12 (7) ◽  
pp. 665-671 ◽  
Author(s):  
Ying Diao ◽  
Benjamin C-K. Tee ◽  
Gaurav Giri ◽  
Jie Xu ◽  
Do Hwan Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Organic Semiconductor ◽  
Large Area ◽  
Single Crystalline ◽  
Semiconductor Thin Films ◽  
Crystalline Domains

Study of Tip-Surface Interactions in Scanning Tunneling Microscopy (STM) by Reflection Electron Microscopy (REM)

1990 ◽  
Vol 48 (1) ◽  
pp. 320-321
Author(s):  
W. Lo ◽  
J.C.H. Spence ◽  
M. Kuwabara
Keyword(s):  
High Resolution ◽  
Elastic Strain ◽  
Tunneling Current ◽  
Surface Damage ◽  
Surface Interactions ◽  
Graphite Surface ◽  
Scanning Tunneling ◽  
Large Area ◽  
Tunneling Microscopy ◽  
High Resolution Tem

Work on the integration of STM with REM has demonstrated the usefulness of this combination. The STM has been designed to replace the side entry holder of a commercial Philips 400T TEM. It allows simultaneous REM imaging of the tip/sample region of the STM (see fig. 1). The REM technique offers nigh sensitivity to strain (<10−4) through diffraction contrast and high resolution (<lnm) along the unforeshortened direction. It is an ideal technique to use for studying tip/surface interactions in STM.The elastic strain associated with tunnelling was first imaged on cleaved, highly doped (S doped, 5 × 1018cm-3) InP(110). The tip and surface damage observed provided strong evidence that the strain was caused by tip/surface contact, most likely through an insulating adsorbate layer. This is consistent with the picture that tunnelling in air, liquid or ordinary vacuum (such as in a TEM) occurs through a layer of contamination. The tip, under servo control, must compress the insulating contamination layer in order to get close enough to the sample to tunnel. The contaminant thereby transmits the stress to the sample. Elastic strain while tunnelling from graphite has been detected by others, but never directly imaged before. Recent results using the STM/REM combination has yielded the first direct evidence of strain while tunnelling from graphite. Figure 2 shows a graphite surface elastically strained by the STM tip while tunnelling (It=3nA, Vtip=−20mV). Video images of other graphite surfaces show a reversible strain feature following the tip as it is scanned. The elastic strain field is sometimes seen to extend hundreds of nanometers from the tip. Also commonly observed while tunnelling from graphite is an increase in the RHEED intensity of the scanned region (see fig.3). Debris is seen on the tip and along the left edges of the brightened scan region of figure 4, suggesting that tip abrasion of the surface has occurred. High resolution TEM images of other tips show what appear to be attached graphite flakes. The removal of contamination, possibly along with the top few layers of graphite, seems a likely explanation for the observed increase in RHEED reflectivity. These results are not inconsistent with the “sliding planes” model of tunnelling on graphite“. Here, it was proposed that the force due to the tunnelling probe acts over a large area, causing shear of the graphite planes when the tip is scanned. The tunneling current is then modulated as the planes of graphite slide in and out of registry. The possiblity of true vacuum tunnelling from the cleaned graphite surface has not been ruled out. STM work function measurements are needed to test this.

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

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