Organic Electro-optic Single- Crystalline Thin Films Grown Directly on Modified Amorphous Substrates

2008 ◽  
Vol 20 (3) ◽  
pp. 543-545 ◽  
Author(s):  
O-P. Kwon ◽  
S.-J. Kwon ◽  
H. Figi ◽  
M. Jazbinsek ◽  
P. Günter
Keyword(s):  
Thin Films ◽  
Single Crystalline ◽  
Electro Optic ◽  
Amorphous Substrates

Electro‐optic properties of single crystalline ferroelectric thin films

1993 ◽  
Vol 63 (5) ◽  
pp. 596-598 ◽  
Author(s):  
D. H. Reitze ◽  
E. Haton ◽  
R. Ramesh ◽  
S. Etemad ◽  
D. E. Leaird ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Single Crystalline ◽  
Electro Optic

Large-Area Organic Electro-optic Single Crystalline Thin Films Grown by Evaporation-Induced Local Supersaturation with Surface Interactions

2009 ◽  
Vol 9 (5) ◽  
pp. 2512-2516 ◽  
Author(s):  
Seong-Ji Kwon ◽  
Christoph Hunziker ◽  
O-Pil Kwon ◽  
Mojca Jazbinsek ◽  
Peter Günter
Keyword(s):  
Thin Films ◽  
Surface Interactions ◽  
Large Area ◽  
Single Crystalline ◽  
Electro Optic ◽  
Local Supersaturation

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates

2013 ◽  
Vol 753 ◽  
pp. 505-509
Author(s):  
Yuichi Sato ◽  
Toshifumi Suzuki ◽  
Hiroyuki Mogami ◽  
Fumito Otake ◽  
Hirotoshi Hatori ◽  
...  
Keyword(s):  
Thin Films ◽  
Quartz Glass ◽  
Glass Substrate ◽  
Solid Phase ◽  
Quartz Glass Substrate ◽  
Heteroepitaxial Growth ◽  
Phase Growth ◽  
Single Crystalline ◽  
Glass Substrates ◽  
Amorphous Quartz

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

scholarly journals The thin film bulk acoustic wave resonator based on single-crystalline 43○Y-cut lithium niobate thin films

AIP Advances ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 075002
Author(s):  
Xiaoyuan Bai ◽  
Yao Shuai ◽  
Lu Lv ◽  
Ying Xing ◽  
Jiaoling Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lithium Niobate ◽  
Acoustic Wave ◽  
Bulk Acoustic Wave ◽  
Single Crystalline ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk
Sign in / Sign up

Export Citation Format

Share Document