scholarly journals High electrical conduction of Sb square net in anti-ThCr2Si2 type La2O2Sb thin film grown by multilayer solid-phase epitaxy

2021 ◽  
Author(s):  
Yuki Yamamoto ◽  
Hideyuki Kawasoko ◽  
Tomoteru Fukumura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rare Earth ◽  
Electrical Conduction ◽  
Solid Phase ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy

Anti-ThCr2Si2 type RE2O2Sb (RE = rare earth) with Sb square net have shown insulating conduction so far. Here we report the synthesis of La2O2Sb epitaxial thin films for the first...

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

2004 ◽  
Vol 19 (7) ◽  
pp. 2137-2143 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Conditions ◽  
Thermal Annealing Process

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

Heteroepitaxial Bi2Sr2CaCu2Ox Superconducting thin films Deposited on LaA1O3 by Solid Phase Epitaxy and OMCVD

1992 ◽  
Vol 275 ◽  
Author(s):  
J. Chen ◽  
H. A. Lu ◽  
F. DiMeo ◽  
B. W. Wessels ◽  
D. L. Schulz ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Superconducting Thin Films ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Film Substrate

ABSTRACT-Heteroepitaxial superconducting Bi,Sr2CaCu2Ox (BSCCO 2212) thin films have been formed by solid phase epitaxy from amorphous films deposited on (100) LaA1O3 single crystal substrates by organometallic chemical vapor deposition. The epitaxial structure of the film is confirmed by x-ray diffraction including θ/2θ and Φ (in plane rotation) scans. Cross-sectional high resolution transmission electron microscopy indicates that the film-substrate interface is nearly atomically abrupt. Improvements in superconducting properties of the epitaxial thin films are noted in comparison to highly textured films deposited on MgO.

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

Preparation of rare-earth thulium doped tin-oxide thin films and their applications in thin film transistors

2019 ◽  
Vol 493 ◽  
pp. 63-69 ◽  
Author(s):  
Jin-hua Ren ◽  
Yu-ting Huang ◽  
Kai-wen Li ◽  
Jie Shen ◽  
Wan-yu Zeng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rare Earth ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Films

Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide

2009 ◽  
Vol 20 (47) ◽  
pp. 475604 ◽  
Author(s):  
Apurba Laha ◽  
E Bugiel ◽  
M Jestremski ◽  
R Ranjith ◽  
A Fissel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Quantum Well ◽  
Solid Phase ◽  
Rare Earth Oxide ◽  
Solid Phase Epitaxy

A Study of the Oxygen Surface Exchange Coefficient on La0.5Sr0.5CoO3−δ Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
X. Chen ◽  
S. Wang ◽  
Y.L. Yang ◽  
L. Smith ◽  
N.J. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Initial Pressure ◽  
Transient Behavior ◽  
Epitaxial Thin Films ◽  
Exchange Coefficient ◽  
Surface Exchange ◽  
Surface Exchange Coefficient ◽  
Pressure Changes ◽  
Oxygen Surface Exchange

AbstractLa0.5Sr0.5CoO3−δ (LSCO) can be used as a cathode material for low temperature solid oxide fuel cell applications. LSCO epitaxial thin films have been deposited on LaAlO3 substrates by pulsed laser deposition (PLD). The transient behavior of the thin film conductivity with the pressure changes was recorded as a function of temperature and partial oxygen pressure. The surface exchange coefficient k of the LSCO thin film was obtained from analysis of the electrical conductivity relaxation data. The measured surface exchange coefficient increases with temperature and with final pressure but is not sensitive to the initial pressure. After prolonged annealing at 900°C, the k value was found to have greatly increased. The mechanism of the dependence of the measured k on pressure is discussed.

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