Fluoropolymer Films Deposited by Argon Ion-Beam Sputtering of Polytetrafluoroethylene

2001 ◽  
pp. 213-221 ◽  
Author(s):  
M. A. Golub ◽  
B. A. Banks ◽  
S. K. Rutledge ◽  
M. C. Kitral
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Fluoropolymer Films ◽  
Argon Ion

Determining the percolation threshold for (FeCoZr)x(CaF2)(100−x) nanocomposites produced by pure argon ion-beam sputtering

2016 ◽  
Vol 683 ◽  
pp. 62-66 ◽  
Author(s):  
Pawel Zukowski ◽  
Tomasz N. Koltunowicz ◽  
Vitalii Bondariev ◽  
Alexander K. Fedotov ◽  
Julia A. Fedotova
Keyword(s):  
Percolation Threshold ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Pure Argon ◽  
Beam Sputtering ◽  
Argon Ion

Effects of argon ion sputtering on zirconium and titanium

1992 ◽  
Vol 50 (1) ◽  
pp. 396-397
Author(s):  
G.J.C. Carpenter ◽  
J.A. Jackman ◽  
J. McCaffrey
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Thin Foil ◽  
Atomic Scale ◽  
Ion Sputtering ◽  
Ion Beam Sputtering ◽  
Thin Foils ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Argon Ion

Argon ion sputtering is widely used in the final thinning stage for the preparation of thin foils for transmission electron microscopy. During a recent study of a titanium alloy, we observed that ion-beam thinning resulted in specimens that appeared in the electron microscope to have become severely damaged. Similar microstructures had been observed previously in zirconium, thinned in this manner. Because ion-beam sputtering takes place on the atomic scale, it seemed unlikely that gross distortion of a thin foil could have been caused directly by the sputtering process. A more detailed study has therefore been made of this phenomenon.

Dual Ion Beam Sputtering for Chromium Nitride as an Alternative to Electroplated Hexavalent Chromium

2005 ◽  
Vol 486-487 ◽  
pp. 301-304
Author(s):  
Kyoung Chul Shin ◽  
Jong Min Lim ◽  
Chong Mu Lee
Keyword(s):  
Corrosion Resistance ◽  
Deposition Rate ◽  
Ion Beam ◽  
Rf Power ◽  
Ion Beam Sputtering ◽  
Chromium Plating ◽  
Beam Sputtering ◽  
Nitrogen Ion ◽  
Dual Ion Beam Sputtering ◽  
Argon Ion

The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and even carcinogenic. Therefore, it is indispensable to develop an alternative deposition technique. To explore the feasibility of sputtering as an alternative technique for chromium plating, we investigated the dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrNx deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-powers. The deposition rate of CrNx depends more strongly upon the rf-power for argon ion beam than that of the nitrogen ion beam. The hardness of the CrNx film can be maximized by optimizing the rf-power, so that the volume percent of the Cr2N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrNx film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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