Sublimation-doping with super bases for high-performance solution-processed heterojunction oxide thin film transistors

2021 ◽  
Author(s):  
Juhyeok Lee ◽  
Mingyu Jae ◽  
Syed Zahid Hassan ◽  
Dae Sung Chung
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
High Electron ◽  
Solution Processed ◽  
High Electron Mobility ◽  
Bias Stress ◽  
High Level

Various amidine base with different pKa values are deposited via sublimation, resulting in not only an exceptionally high electron mobility of 37.8 cm2 V−1 s−1 on average (46.6 cm2 V−1 s−1 maximum) but also a high level of bias-stress stability.

Corrugated Heterojunction Metal-Oxide Thin-Film Transistors with High Electron Mobility via Vertical Interface Manipulation

2018 ◽  
Vol 30 (40) ◽  
pp. 1804120 ◽  
Author(s):  
Minuk Lee ◽  
Jeong-Wan Jo ◽  
Yoon-Jeong Kim ◽  
Seungbeom Choi ◽  
Sung Min Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
High Electron ◽  
High Electron Mobility ◽  
Metal Oxide Thin Film

Thiophene-S,S-dioxidized indophenines as high performance n-type organic semiconductors for thin film transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (51) ◽  
pp. 45410-45418 ◽  
Author(s):  
Yunfeng Deng ◽  
Bin Sun ◽  
Jesse Quinn ◽  
Yinghui He ◽  
Jackson Ellard ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Performance ◽  
Energy Levels ◽  
High Electron ◽  
High Electron Mobility ◽  
Type Semiconductor

Three thiophene-S,S-dioxidized indophenines with deep frontier energy levels are synthesized from isatins and thiophene, which exhibit n-type semiconductor performance with high electron mobility of up to 0.11 cm2 V−1 s−1 in thin film transistors.

scholarly journals High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

2015 ◽  
Vol 2 (7) ◽  
pp. 1500058 ◽  
Author(s):  
Yen-Hung Lin ◽  
Hendrik Faber ◽  
John G. Labram ◽  
Emmanuel Stratakis ◽  
Labrini Sygellou ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Electron ◽  
Solution Processed ◽  
High Electron Mobility ◽  
Semiconducting Metal Oxide

High Performance Solution-Processed Indium Oxide Thin-Film Transistors

2008 ◽  
Vol 130 (38) ◽  
pp. 12580-12581 ◽  
Author(s):  
Hyun Sung Kim ◽  
Paul D. Byrne ◽  
Antonio Facchetti ◽  
Tobin J. Marks
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Indium Oxide Thin Film

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2010 ◽  
Vol 10 (1) ◽  
pp. 45-50 ◽  
Author(s):  
K. K. Banger ◽  
Y. Yamashita ◽  
K. Mori ◽  
R. L. Peterson ◽  
T. Leedham ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
On Chip

Solution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities

2016 ◽  
Vol 4 (47) ◽  
pp. 11298-11304 ◽  
Author(s):  
Sooji Nam ◽  
Jong-Heon Yang ◽  
Sung Haeng Cho ◽  
Ji Hun Choi ◽  
Oh-Sang Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film

The ZnO/SnO2 bilayer TFTs exhibited outstanding electron mobilities and excellent electrical stabilities against a variety of bias stresses.

Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT

1994 ◽  
Vol 336 ◽  
Author(s):  
Y. Chida ◽  
M. Kondo ◽  
G. Ganguly ◽  
A. Matsuda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
High Mobility ◽  
High Electron ◽  
Field Effect Mobility ◽  
Si Substrate ◽  
High Electron Mobility ◽  
Deposition Conditions

ABSTRACTHigh electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.

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