Stable Ferroelectric Perovskite Structure with Giant Axial Ratio and Polarization in Epitaxial BiFe0.6Ga0.4O3 Thin Films

2015 ◽  
Vol 7 (4) ◽  
pp. 2648-2653 ◽  
Author(s):  
Zhen Fan ◽  
Juanxiu Xiao ◽  
Huajun Liu ◽  
Ping Yang ◽  
Qingqing Ke ◽  
...  
Keyword(s):  
Thin Films ◽  
Perovskite Structure ◽  
Axial Ratio ◽  
Ferroelectric Perovskite

Sputtered lead scandium tantalate thin films: Pb4+ in B sites in the perovskite structure

1997 ◽  
Vol 82 (11) ◽  
pp. 5686-5694 ◽  
Author(s):  
R. W. Whatmore ◽  
Z. Huang ◽  
M. Todd
Keyword(s):  
Thin Films ◽  
Perovskite Structure

Formation Mechanism in Perovskite Structure of (Bi, Ln)(Ni, Ti)O3 Thin Films Fabricated by Rf Magnetron Sputtering

2009 ◽  
Vol 55 (2(1)) ◽  
pp. 813-819
Author(s):  
Hisashi Oshima ◽  
Masafumi Kobune ◽  
Hideto Tada ◽  
Koji Fukushima ◽  
Hideshi Yamaguchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Formation Mechanism ◽  
Perovskite Structure ◽  
Rf Magnetron Sputtering

scholarly journals Magnetodielectric coupling in epitaxial Nd2CoMnO6 thin films with double perovskite structure

2014 ◽  
Vol 115 (8) ◽  
pp. 084106 ◽  
Author(s):  
Avneesh Anshul ◽  
R. K. Kotnala ◽  
R. P. Aloysius ◽  
Anurag Gupta ◽  
G. A. Basheed
Keyword(s):  
Thin Films ◽  
Perovskite Structure ◽  
Double Perovskite

Basic Thin Film Process for Perovskite Ferroelectric Materials

1990 ◽  
Vol 200 ◽  
Author(s):  
Hideaki Adachi ◽  
Kiyotaka Wasa
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Materials ◽  
Epitaxial Thin Films ◽  
Preparation Process ◽  
Film Preparation ◽  
Plzt Thin Film ◽  
Plzt Thin Films ◽  
Ferroelectric Perovskite

ABSTRACTThin film process for ferroelectric perovskite oxides has been investigated. Amorphous, polycrystal, and epitaxial thin films of Pb-based perovskite ferroelectrics were prepared by rf-magnetron sputtering, and their properties were discussed. Epitaxial PLZT thin films showed similar dielectric properties as PLZT bulk ceramics and also showed strong electrooptic effect. For further investigation, film preparation process was developed by multitarget sputtering and quaternary PLZT thin film with excellent epitaxial crystallinity was realized by using a graded composition layer.

scholarly journals Improved Ferroelectric and Leakage Properties of Ce Doped in BiFeO3Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Alima Bai ◽  
Shifeng Zhao ◽  
Jieyu Chen
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Perovskite Structure ◽  
Ferroelectric Properties ◽  
Rare Metal ◽  
Orthorhombic Symmetry ◽  
Phase Structures ◽  
Multiferroic Bifeo ◽  
Symmetry Structure ◽  
Rhombohedral Symmetry

Ce doped BiFeO3thin films with a perovskite structure were prepared using solution-gelation method. It shows that the ferroelectric properties have been enhanced after doping Ce. The enhanced ferroelectric properties are attributed to the structural transformation and the reduced leakage current after doping rare metal of Ce. It has been found that the phase structures of the films transfer from rhombohedral symmetry structure to the coexistence of the tetragonal and orthorhombic symmetry structure. And Fe2+ions have been reduced, which leads to the decreased leakage for Ce doped BiFeO3thin films. The present work can provide an available way to improve the ferroelectric and leakage properties for multiferroic BiFeO3based thin films.

scholarly journals Band Gap of Pb(Fe0.5Nb0.5)O3 Thin Films Prepared by Pulsed Laser Deposition

Materials ◽  
2021 ◽  
Vol 14 (22) ◽  
pp. 6841
Author(s):  
Nicole Bartek ◽  
Vladimir V. Shvartsman ◽  
Houssny Bouyanfif ◽  
Alexander Schmitz ◽  
Gerd Bacher ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Open Circuit ◽  
Ferroelectric Materials ◽  
Promising Candidate ◽  
Photovoltaic Efficiency ◽  
Absorber Material ◽  
Photovoltaic Applications ◽  
High Band ◽  
Ferroelectric Perovskite

Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead‑based ferroelectric perovskite thin films such as Pb(Zr,Ti)O3 (Pb,La)(Zr,Ti)O3 and PbTiO3 were investigated with respect to their photovoltaic efficiency. Nevertheless, due to their high band gaps they only absorb photons in the UV spectral range. The well-known ferroelectric PbFe0.5Nb0.5O3 (PFN), which is in a structure similar to the other three, has not been considered as a possible candidate until now. We found that the band gap of PFN is around 2.75 eV and that the conductivity can be increased from 23 S/µm to 35 S/µm during illumination. The relatively low band gap value makes PFN a promising candidate as an absorber material.

"Synthesis and characterization of Ba0.8Sr0.2TiO3 perovskite thin films prepared by Sol Gel Technique "

2020 ◽  
Vol 7 (2) ◽  
pp. 1-11
Author(s):  
Hamed A. Gatea ◽  
Iqbal Nahi
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Perovskite Structure ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Barium Strontium ◽  
Intermediate Phases ◽  
Gel Technique

"Barium strontium Titanate (BST) is a solid solution consist of BaTiO3 and SrTiO3 that mixed with suitable ratio. Barium strontium Titanate oxide (Ba0.8Sr0.2TiO3) thin films prepared by sol gel technique. Barium strontium Titanate thin films deposited on Si substrate and annealed at [400,500, 600 and 700] ºC. The characterization of BST films investigated by a different technique, the X-Ray Diffraction (XRD) and Scanning Electron Macroscopy (SEM) revealed the phases, crystal structure and surface topography of the films. XRD pattern shows tetragonal phase for Ba0.8Sr0.2TiO3 perovskite structure with many peaks for different plans. The films annealed at the different temperature that indicated intermediate phases on perovskite structure of Ba0.8Sr0.2TiO3.

Sign in / Sign up

Export Citation Format

Share Document