scholarly journals Band Gap of Pb(Fe0.5Nb0.5)O3 Thin Films Prepared by Pulsed Laser Deposition

Materials ◽  
2021 ◽  
Vol 14 (22) ◽  
pp. 6841
Author(s):  
Nicole Bartek ◽  
Vladimir V. Shvartsman ◽  
Houssny Bouyanfif ◽  
Alexander Schmitz ◽  
Gerd Bacher ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Open Circuit ◽  
Ferroelectric Materials ◽  
Promising Candidate ◽  
Photovoltaic Efficiency ◽  
Absorber Material ◽  
Photovoltaic Applications ◽  
High Band ◽  
Ferroelectric Perovskite

Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead‑based ferroelectric perovskite thin films such as Pb(Zr,Ti)O3 (Pb,La)(Zr,Ti)O3 and PbTiO3 were investigated with respect to their photovoltaic efficiency. Nevertheless, due to their high band gaps they only absorb photons in the UV spectral range. The well-known ferroelectric PbFe0.5Nb0.5O3 (PFN), which is in a structure similar to the other three, has not been considered as a possible candidate until now. We found that the band gap of PFN is around 2.75 eV and that the conductivity can be increased from 23 S/µm to 35 S/µm during illumination. The relatively low band gap value makes PFN a promising candidate as an absorber material.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

scholarly journals Transition Metal-Hyperdoped InP Semiconductors as Efficient Solar Absorber Materials

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 283 ◽  
Author(s):  
Gregorio García ◽  
Pablo Sánchez-Palencia ◽  
Pablo Palacios ◽  
Perla Wahnón
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Electronic Band ◽  
Solar Absorber ◽  
Photovoltaic Efficiency ◽  
Absorber Material ◽  
Photovoltaic Applications ◽  
New States ◽  
Absorption Features ◽  
Structure Calculations

This work explores the possibility of increasing the photovoltaic efficiency of InP semiconductors through a hyperdoping process with transition metals (TM = Ti, V, Cr, Mn). To this end, we investigated the crystal structure, electronic band and optical absorption features of TM-hyperdoped InP (TM@InP), with the formula TMxIn1-xP (x = 0.03), by using accurate ab initio electronic structure calculations. The analysis of the electronic structure shows that TM 3d-orbitals induce new states in the host semiconductor bandgap, leading to improved absorption features that cover the whole range of the sunlight spectrum. The best results are obtained for Cr@InP, which is an excellent candidate as an in-gap band (IGB) absorber material. As a result, the sunlight absorption of the material is considerably improved through new sub-bandgap transitions across the IGB. Our results provide a systematic and overall perspective about the effects of transition metal hyperdoping into the exploitation of new semiconductors as potential key materials for photovoltaic applications.

scholarly journals Deposition routes of Cs2AgBiBr6 double perovskites for photovoltaic applications

MRS Advances ◽  
2018 ◽  
Vol 3 (32) ◽  
pp. 1819-1823 ◽  
Author(s):  
Martina Pantaler ◽  
Christian Fettkenhauer ◽  
Hoang L. Nguyen ◽  
Irina Anusca ◽  
Doru C. Lupascu
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Perovskite Phase ◽  
Perovskite Solar Cells ◽  
Double Perovskite ◽  
Double Perovskites ◽  
Sequential Deposition ◽  
Absorber Material ◽  
Photovoltaic Applications ◽  
Deposition Processes

ABSTRACTThe lead free double perovskite Cs2AgBiBr6 is an upcoming alternative to lead based perovskites as absorber material in perovskite solar cells. So far, the majority of investigations on this interesting material have focused on polycrystalline powders and single crystals. We present vapor and solution based approaches for the preparation of Cs2AgBiBr6 thin films. Sequential vapor deposition processes starting from different precursors are shown and their weaknesses are discussed. Single source evaporation of Cs2AgBiBr6 and sequential deposition of Cs3Bi2Br9 and AgBr result in the formation of the double perovskite phase. Additionally, we show the possibility of the preparation of planar Cs2AgBiBr6 thin films by spin coating.

Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review

2020 ◽  
Vol 20 (6) ◽  
pp. 3622-3635 ◽  
Author(s):  
Kuldeep S. Gour ◽  
Rahul Parmar ◽  
Rahul Kumar ◽  
Vidya N. Singh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Buffer Layer ◽  
Low Cost ◽  
Incident Light ◽  
High Resistivity ◽  
Short Wavelength Range ◽  
Absorber Material

Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

Fabrication of Graded Band Gap Amorphous Carbon Nitride Thin Films for New Generation Photovoltaic Applications

2012 ◽  
Vol 51 (10S) ◽  
pp. 10NE26 ◽  
Author(s):  
Chihiro Iwasaki ◽  
Masami Aono ◽  
Naoyuki Tamura ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Photovoltaic Applications ◽  
Amorphous Carbon Nitride ◽  
Graded Band Gap ◽  
New Generation

Basic Thin Film Process for Perovskite Ferroelectric Materials

1990 ◽  
Vol 200 ◽  
Author(s):  
Hideaki Adachi ◽  
Kiyotaka Wasa
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Materials ◽  
Epitaxial Thin Films ◽  
Preparation Process ◽  
Film Preparation ◽  
Plzt Thin Film ◽  
Plzt Thin Films ◽  
Ferroelectric Perovskite

ABSTRACTThin film process for ferroelectric perovskite oxides has been investigated. Amorphous, polycrystal, and epitaxial thin films of Pb-based perovskite ferroelectrics were prepared by rf-magnetron sputtering, and their properties were discussed. Epitaxial PLZT thin films showed similar dielectric properties as PLZT bulk ceramics and also showed strong electrooptic effect. For further investigation, film preparation process was developed by multitarget sputtering and quaternary PLZT thin film with excellent epitaxial crystallinity was realized by using a graded composition layer.

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