(Invited) Brain-like Synapse Thin-Film Transistors Using Oxide Semiconductor Channel and Solid Electrolytic Gate Insulator

2017 ◽  
Vol 79 (1) ◽  
pp. 183-188
Author(s):  
Sung-Min Yoon ◽  
Eom-Ji Kim ◽  
Yeo-Myeong Kim ◽  
Ji Young Oh
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Semiconductor

Growth of High Quality Fluorinated Silicon Dioxide for Thin Film Transistors

2002 ◽  
Vol 715 ◽  
Author(s):  
Roger Keen ◽  
Vikram L. Dalal
Keyword(s):  
Thin Film ◽  
Silicon Dioxide ◽  
Thin Film Transistors ◽  
Defect Density ◽  
Low Pressure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Oxide Interface ◽  
High Quality ◽  
Interface Defect

AbstractThin film transistors(TFT) in microcrystalline and amorphous Si require high quality gate insulators that can be grown at low temperatures. In this paper, we show that one can oxidize Si wafers to produce high quality fluorinated silicon dioxide gate insulator using a low pressure remote plasma. The insulating film was grown on c-Si substrates using a low pressure ECR oxygen plasma, with small quantities of fluorine added to the mixture. Helium was used as the carrier gas for both oxygen and fluorine. The growth temperatures were in the range of 400–450 C. MOS type capacitors were made to judge the quality of the oxide/semiconductor interface, and interface defect densities were measured using capacitance-voltage techniques. It was found that when no fluorine was present in the oxide, the interface defect density was ∼1-2 x 1011/cm2 eV. The addition of F2 to oxygen immediately reduced the defect density by an order of magnitude, to ∼1.5 x 1010/cm2eV. The addition of more F2 slowly increased the defect density. Thermal cycling measurements showed that the semiconductor/oxide interface is very stable under cycling.

Fabrication of Stretchable Organic–Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures

2015 ◽  
Vol 15 (10) ◽  
pp. 7526-7530 ◽  
Author(s):  
Soon-Won Jung ◽  
Jae Bon Koo ◽  
Chan Woo Park ◽  
Bock Soon Na ◽  
Ji-Young Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Vinylidene Fluoride ◽  
Channel Structure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Poly Vinylidene Fluoride

In this study, stretchable organic–inorganic hybrid thin-film transistors (TFTs) are fabricated on a polyimide (PI) stiff-island/elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and oxide semiconductor In-Ga-Zn-O as the gate dielectric and semiconducting layer, respectively. Carrier mobility, Ion/Ioff ratio, and subthreshold swing (SS) values of 6.1 cm2 V−1 s−1, 107, and 0.2 V/decade, respectively, were achieved. For the hybrid TFTs, the endurable maximum strain without degradation of electrical properties was approximately 49%. These results correspond to those obtained in the first study on fabrication of stretchable hybrid-type TFTs on elastomer substrate using an organic gate insulator and oxide semiconducting active channel structure, thus indicating the feasibility of a promising device for stretchable electronic systems.

Investigation of Polysilazane-Based $\hbox{SiO}_{2}$ Gate Insulator for Oxide Semiconductor Thin-Film Transistors

2013 ◽  
Vol 60 (3) ◽  
pp. 1149-1153 ◽  
Author(s):  
Huynh Thi Cam Tu ◽  
Satoshi Inoue ◽  
Phan Trong Tue ◽  
Takaaki Miyasako ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Semiconductor Thin Film

¡°See-Through¡± Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel

2011 ◽  
Vol 58 (5(2)) ◽  
pp. 1494-1499 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shinhyuk Yang ◽  
Chun-Won Byun ◽  
Soon-Won Jung ◽  
Sang-Hee Ko Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Gate Insulator ◽  
Oxide Semiconductor

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

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