Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique

2012 ◽  
Vol 5 (2) ◽  
pp. 227-232 ◽  
Author(s):  
Jui-Fen Chien ◽  
Hua-Yang Liao ◽  
Sheng-Fu Yu ◽  
Ray-Ming Lin ◽  
Makoto Shiojiri ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Light Emitting ◽  
Nitrogen Doped ◽  
Doping Technique ◽  
Doped Zno

scholarly journals Dimension control of in situ fabricated CsPbClBr2 nanocrystal films toward efficient blue light-emitting diodes

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Chenhui Wang ◽  
Dengbao Han ◽  
Junhui Wang ◽  
Yingguo Yang ◽  
Xinyue Liu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Blue Emission ◽  
Light Emitting ◽  
Mixed Ligands ◽  
Dimension Control ◽  
Nanocrystal Films ◽  
Width Distribution ◽  
Quantum Well Width

AbstractIn the field of perovskite light-emitting diodes (PeLEDs), the performance of blue emissive electroluminescence devices lags behind the other counterparts due to the lack of fabrication methodology. Herein, we demonstrate the in situ fabrication of CsPbClBr2 nanocrystal films by using mixed ligands of 2-phenylethanamine bromide (PEABr) and 3,3-diphenylpropylamine bromide (DPPABr). PEABr dominates the formation of quasi-two-dimensional perovskites with small-n domains, while DPPABr induces the formation of large-n domains. Strong blue emission at 470 nm with a photoluminescence quantum yield up to 60% was obtained by mixing the two ligands due to the formation of a narrower quantum-well width distribution. Based on such films, efficient blue PeLEDs with a maximum external quantum efficiency of 8.8% were achieved at 473 nm. Furthermore, we illustrate that the use of dual-ligand with respective tendency of forming small-n and large-n domains is a versatile strategy to achieve narrow quantum-well width distribution for photoluminescence enhancement.

Remarkable lifetime improvement of quantum-dot light emitting diodes by incorporating rubidium carbonate in metal-oxide electron transport layers

2019 ◽  
Vol 7 (32) ◽  
pp. 10082-10091 ◽  
Author(s):  
Yujin Lee ◽  
Hyo-Min Kim ◽  
Jeonggi Kim ◽  
Jin Jang
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Metal Oxide ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Remarkable Improvement ◽  
Operational Lifetime ◽  
Electron Transporting Layer ◽  
Doped Zno ◽  
Mg Doped

We demonstrated the remarkable improvement of efficiency roll-off and operational lifetime in red quantum dot light emitting diodes (R-QLEDs) by incorporating rubidium carbonate (Rb2CO3) in Mg doped ZnO (MZO) electron transporting layer (ETL).

Nitrogen-doped ZnO/n-Si core–shell nanowire photodiode prepared by atomic layer deposition

2015 ◽  
Vol 33 ◽  
pp. 154-160 ◽  
Author(s):  
Kyung Yong Ko ◽  
Hyemin Kang ◽  
Wonseon Lee ◽  
Chang-Wan Lee ◽  
Jusang Park ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Core Shell ◽  
Nitrogen Doped ◽  
Layer Deposition ◽  
Doped Zno

Excitonic Creation of Highly Luminescent Defects In Situ in Working Organic Light-Emitting Diodes

2017 ◽  
Vol 6 (2) ◽  
pp. 1700856 ◽  
Author(s):  
Yong-Biao Zhao ◽  
Grayson L. Ingram ◽  
Xi-Wen Gong ◽  
Xi-Yan Li ◽  
Li-Na Quan ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light
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