On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

ACS Photonics ◽  
2019 ◽  
Vol 6 (7) ◽  
pp. 1736-1743 ◽  
Author(s):  
Jun-Feng Wang ◽  
Qiang Li ◽  
Fei-Fei Yan ◽  
He Liu ◽  
Guo-Ping Guo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vacancy Defects ◽  
Silicon Vacancy ◽  
On Demand

scholarly journals Efficient Generation of an Array of Single Silicon-Vacancy Defects in Silicon Carbide

2017 ◽  
Vol 7 (6) ◽  
Author(s):  
Junfeng Wang ◽  
Yu Zhou ◽  
Xiaoming Zhang ◽  
Fucai Liu ◽  
Yan Li ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vacancy Defects ◽  
Silicon Vacancy ◽  
Efficient Generation

scholarly journals Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Fumiya Nagasawa ◽  
Makoto Takamura ◽  
Hiroshi Sekiguchi ◽  
Yoshinori Miyamae ◽  
Yoshiaki Oku ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Photoluminescence Spectra ◽  
Bulk Silicon ◽  
Electron Dose ◽  
Vacancy Defects ◽  
Silicon Vacancy ◽  
Temperature Electron ◽  
Electroluminescence Intensity ◽  
Bulk Substrate

AbstractWe investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originating from silicon-vacancy defects. For a diode exposed to an electron dose of $$1 \times 10^{18}\,{{\mathrm{cm}}}^{-2}$$ 1 × 10 18 cm - 2 at $$800\,{{\mathrm{keV}}}$$ 800 keV , the electroluminescence intensity of these defects is most prominent within a wavelength range of 400–$$1100\,{{\mathrm{nm}}}$$ 1100 nm . The commonly observed $${{\mathrm{D}}}_1$$ D 1 emission was sufficiently suppressed in the electroluminescence spectra of all the fabricated diodes, while it was detected in the photoluminescence measurements. The photoluminescence spectra also displayed emission lines from silicon-vacancy defects.

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

Stark Tuning of the Silicon Vacancy in Silicon Carbide

Nano Letters ◽  
2019 ◽  
Vol 20 (1) ◽  
pp. 658-663 ◽  
Author(s):  
Maximilian Rühl ◽  
Lena Bergmann ◽  
Michael Krieger ◽  
Heiko B. Weber
Keyword(s):  
Silicon Carbide ◽  
Silicon Vacancy

scholarly journals Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

2020 ◽  
Vol 10 (11) ◽  
pp. 4013
Author(s):  
Priya Darshni Kaushik ◽  
Gholam Reza Yazdi ◽  
Garimella Bhaskara Venkata Subba Lakshmi ◽  
Grzegorz Greczynski ◽  
Rositsa Yakimova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Defect Density ◽  
Epitaxial Graphene ◽  
Monolayer Graphene ◽  
Vacancy Defects ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion

Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp3 defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of graphitic carbon and silicon carbide as a result of ion implantation. The dopant concentration and level of defects could be controlled both in EG and SiC by the fluence. This provided an opportunity to explore EG/SiC as a platform using ion implantation to control defects, and to be applied for fabricating sensitive sensors and nanoelectronics devices with high performance.

Static and Dynamic Stark Tuning of the Silicon Vacancy in Silicon Carbide

2020 ◽  
Author(s):  
Alexander D. White ◽  
Daniil M. Lukin ◽  
Melissa A. Guidry ◽  
Rahul Trivedi ◽  
Naoya Morioka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Vacancy

scholarly journals Scalable Fabrication of Single Silicon Vacancy Defect Arrays in Silicon Carbide Using Focused Ion Beam

ACS Photonics ◽  
2017 ◽  
Vol 4 (5) ◽  
pp. 1054-1059 ◽  
Author(s):  
Junfeng Wang ◽  
Xiaoming Zhang ◽  
Yu Zhou ◽  
Ke Li ◽  
Ziyu Wang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vacancy Defect ◽  
Silicon Vacancy

Anisotropic mechanical behavior of two dimensional silicon carbide: effect of temperature and vacancy defects

2019 ◽  
Vol 6 (12) ◽  
pp. 125073 ◽  
Author(s):  
A S M Jannatul Islam ◽  
Md Sherajul Islam ◽  
Naim Ferdous ◽  
Jeongwon Park ◽  
Ashraful G Bhuiyan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Mechanical Behavior ◽  
Effect Of Temperature ◽  
Two Dimensional ◽  
Vacancy Defects
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