scholarly journals Spin polarization through intersystem crossing in the silicon vacancy of silicon carbide

2019 ◽  
Vol 99 (18) ◽  
Author(s):  
Wenzheng Dong ◽  
M. W. Doherty ◽  
Sophia E. Economou
Keyword(s):  
Silicon Carbide ◽  
Spin Polarization ◽  
Intersystem Crossing ◽  
Silicon Vacancy

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

Stark Tuning of the Silicon Vacancy in Silicon Carbide

Nano Letters ◽  
2019 ◽  
Vol 20 (1) ◽  
pp. 658-663 ◽  
Author(s):  
Maximilian Rühl ◽  
Lena Bergmann ◽  
Michael Krieger ◽  
Heiko B. Weber
Keyword(s):  
Silicon Carbide ◽  
Silicon Vacancy

Static and Dynamic Stark Tuning of the Silicon Vacancy in Silicon Carbide

2020 ◽  
Author(s):  
Alexander D. White ◽  
Daniil M. Lukin ◽  
Melissa A. Guidry ◽  
Rahul Trivedi ◽  
Naoya Morioka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Vacancy

scholarly journals Scalable Fabrication of Single Silicon Vacancy Defect Arrays in Silicon Carbide Using Focused Ion Beam

ACS Photonics ◽  
2017 ◽  
Vol 4 (5) ◽  
pp. 1054-1059 ◽  
Author(s):  
Junfeng Wang ◽  
Xiaoming Zhang ◽  
Yu Zhou ◽  
Ke Li ◽  
Ziyu Wang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vacancy Defect ◽  
Silicon Vacancy

Creation of silicon vacancy in silicon carbide by proton beam writing toward quantum sensing applications

2018 ◽  
Vol 51 (33) ◽  
pp. 333002 ◽  
Author(s):  
Takeshi Ohshima ◽  
Takahiro Satoh ◽  
Hannes Kraus ◽  
Georgy V Astakhov ◽  
Vladimir Dyakonov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Proton Beam ◽  
Silicon Vacancy ◽  
Sensing Applications ◽  
Proton Beam Writing ◽  
Quantum Sensing

scholarly journals High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Roland Nagy ◽  
Matthias Niethammer ◽  
Matthias Widmann ◽  
Yu-Chen Chen ◽  
Péter Udvarhelyi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Control ◽  
High Fidelity ◽  
Silicon Vacancy

scholarly journals Efficient Generation of an Array of Single Silicon-Vacancy Defects in Silicon Carbide

2017 ◽  
Vol 7 (6) ◽  
Author(s):  
Junfeng Wang ◽  
Yu Zhou ◽  
Xiaoming Zhang ◽  
Fucai Liu ◽  
Yan Li ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vacancy Defects ◽  
Silicon Vacancy ◽  
Efficient Generation

scholarly journals All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide

2016 ◽  
Vol 6 (3) ◽  
Author(s):  
D. Simin ◽  
V. A. Soltamov ◽  
A. V. Poshakinskiy ◽  
A. N. Anisimov ◽  
R. A. Babunts ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Fine Structure ◽  
Silicon Vacancy ◽  
All Optical
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