scholarly journals Chemical Bonding in Transition Metal Nitride Os3N3+ Cluster: 6π Inorganic Benzene and δ2δ*1δ*1 Aromaticity

ACS Omega ◽  
2018 ◽  
Vol 3 (12) ◽  
pp. 17083-17091
Author(s):  
Na Liu ◽  
Xue-Rui You ◽  
Hua-Jin Zhai
Keyword(s):  
Transition Metal ◽  
Chemical Bonding ◽  
Metal Nitride ◽  
Transition Metal Nitride ◽  
Inorganic Benzene

scholarly journals Chemical bonding states and solar selective characteristics of unbalanced magnetron sputtered TixM1−x−yNy films

RSC Advances ◽  
2016 ◽  
Vol 6 (43) ◽  
pp. 36373-36383 ◽  
Author(s):  
M. Mahbubur Rahman ◽  
Zhong-Tao Jiang ◽  
Paul Munroe ◽  
Lee Siang Chuah ◽  
Zhi-feng Zhou ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Transition Metal ◽  
Mechanical Strength ◽  
Chemical Bonding ◽  
Metal Nitride ◽  
Bonding State ◽  
Transition Metal Nitride ◽  
Unbalanced Magnetron ◽  
Chemical Bonding State

Transition metal nitride TixM1−x−yNy (M = Al or AlSi) based thin films are evaluated as solar selective surfaces by correlating their spectral selective features with their crystal structure and chemical bonding state including mechanical strength.

Two-dimensional van der Waals graphene/transition metal nitride heterostructures as promising high-performance nanodevices

2021 ◽  
Author(s):  
Khang D. Pham ◽  
Cuong Q. Nguyen ◽  
C. V. Nguyen ◽  
Pham V. Cuong ◽  
Nguyen V. Hieu
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Metal Nitride ◽  
Transition Metal Nitride ◽  
New Phenomena

Graphene-based van der Waals (vdW) heterostructures have attracted much attention because they can enhance the properties of separated materials, possess numerous new phenomena and unusual properties and improve the performance of devices.

Magnetic and electronic properties of transition metal nitride strained layers

2007 ◽  
Vol 4 (2) ◽  
pp. 269-271
Author(s):  
M. Ribeiro ◽  
L. M. R. Scolfaro ◽  
L. K. Teles ◽  
M. Marques ◽  
L. G. Ferreira
Keyword(s):  
Transition Metal ◽  
Electronic Properties ◽  
Metal Nitride ◽  
Strained Layers ◽  
Transition Metal Nitride

scholarly journals SYNTHESIS OF TRANSITION METAL NITRIDE AT LOW TEMPERATURE FROM COMPLEXED PRECURSOR

2019 ◽  
pp. 1-7
Author(s):  
Rayane Ricardo da Silva ◽  
Carlson Pereira de Souza ◽  
André Luís Lopes Moriyama
Keyword(s):  
Low Temperature ◽  
Transition Metal ◽  
Metal Nitride ◽  
Transition Metal Nitride

scholarly journals Nanostructured transition metal nitride composites as energy storage material

2012 ◽  
Vol 57 (32) ◽  
pp. 4111-4118 ◽  
Author(s):  
YanHua Yue ◽  
PengXian Han ◽  
ShanMu Dong ◽  
KeJun Zhang ◽  
ChuanJian Zhang ◽  
...  
Keyword(s):  
Energy Storage ◽  
Transition Metal ◽  
Storage Material ◽  
Metal Nitride ◽  
Transition Metal Nitride ◽  
Energy Storage Material

Interpretation of Hardness in Pseudobinary Nitrides by Bulk Modulus Estimated from Interatomic Distance

2005 ◽  
Vol 502 ◽  
pp. 81-86 ◽  
Author(s):  
Yukio Makino
Keyword(s):  
Transition Metal ◽  
Aluminum Nitride ◽  
Bulk Modulus ◽  
Phase Change ◽  
Interatomic Distance ◽  
Drastic Change ◽  
Compositional Dependence ◽  
Metal Nitride ◽  
Transition Metal Nitride ◽  
Metal Aluminum

Hardness of the pseudobinary transition metal aluminum nitride (T-Al-N) films is improved with increasing the AlN content as far as the B1structure is maintained. A drastic change in the compositional dependence of the hardness corresponds to the phase change of the pseudobinary nitride from B1(NaCl) to B4(wurtzite) structure. Predicted value of AlN content for the drastic change agrees with the AlN content determined experimentally. Hardness of various T-Al-N films was closely correlated with the bulk modulus calculated from interatomic distance based on the power functional formula. The improvement of hardness is attributed to the inherent increase of bulk modulus due to dissolution of AlN into transition metal nitride.

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