scholarly journals Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources

ACS Omega ◽  
2020 ◽  
Vol 5 (41) ◽  
pp. 26776-26785
Author(s):  
Atsushi Tanide ◽  
Shohei Nakamura ◽  
Akira Horikoshi ◽  
Shigeru Takatsuji ◽  
Takahiro Kimura ◽  
...  
Keyword(s):  
Film Growth ◽  
Atomic Nitrogen ◽  
Plasma Sources ◽  
Gan Film

Atomic assembly during GaN film growth: Molecular dynamics simulations

2006 ◽  
Vol 73 (4) ◽  
Author(s):  
X. W. Zhou ◽  
D. A. Murdick ◽  
B. Gillespie ◽  
H. N. G. Wadley
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Film Growth ◽  
Dynamics Simulations ◽  
Gan Film

scholarly journals GaN film growth on LiNbO3surfaces using molecular beam epitaxy

2009 ◽  
Vol 187 ◽  
pp. 012013 ◽  
Author(s):  
Man Hoai Nam ◽  
Son Chul Goo ◽  
Moon Deock Kim ◽  
Woochul Yang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Gan Film

Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF–MBE

2005 ◽  
Vol 278 (1-4) ◽  
pp. 411-414 ◽  
Author(s):  
Ryuhei Kimura ◽  
Takeaki Suzuki ◽  
Masamichi Ouchi ◽  
Kouichi Ishida ◽  
Kiyoshi Takahashi
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Film Growth ◽  
Cubic Gan ◽  
Gan Film

scholarly journals Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire

1998 ◽  
Vol 537 ◽  
Author(s):  
A.J. Ptak ◽  
K.S. Ziemer ◽  
M.R. Millecchia ◽  
C.D. Stinespring ◽  
T.H. Myers
Keyword(s):  
Molecular Nitrogen ◽  
Active Species ◽  
Operating Conditions ◽  
Rf Plasma ◽  
Atomic Nitrogen ◽  
Active Nitrogen ◽  
Plasma Sources ◽  
Electrostatic Deflector ◽  
Low Energy Ions ◽  
Operating Regimes

AbstractThe operating regimes of two rf-plasma sources, an Oxford CARS-25 and an EPI Unibulb, have been extensively characterized. By changing the exit aperture configuration and using an electrostatic deflector, the Oxford source could produce either primarily atomic nitrogen, atomic nitrogen mixed with low energy ions, or a large flux of higher energy ions (>65eV) as the active species in a background of neutral molecular nitrogen. The EPI source produced a significant flux of metastable molecular nitrogen as the active species with a smaller atomic nitrogen component. Nitridation of sapphire using each source under the various operating conditions indicate that the reactivity was different for each type of active nitrogen. Boron contamination originating from the pyrolytic boron nitride plasma cell liner was observed.

Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth

2009 ◽  
Vol 105 (6) ◽  
pp. 066106 ◽  
Author(s):  
T. Nagata ◽  
M. Haemori ◽  
Y. Sakuma ◽  
T. Chikyow ◽  
J. Anzai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Nitrogen Plasma ◽  
Hydrogen Effect ◽  
Atmospheric Nitrogen ◽  
Gan Film

GaN Film Growth Using Single-Source Precursors

1995 ◽  
Vol 7 (3) ◽  
pp. 546-552 ◽  
Author(s):  
Vikas Lakhotia ◽  
Deborah A. Neumayer ◽  
A. H. Cowley ◽  
R. A. Jones ◽  
J. G. Ekerdt
Keyword(s):  
Film Growth ◽  
Single Source ◽  
Single Source Precursors ◽  
Gan Film

ChemInform Abstract: GaN Film Growth Using Single-Source Precursors.

ChemInform ◽  
2010 ◽  
Vol 26 (29) ◽  
pp. no-no
Author(s):  
V. LAKHOTIA ◽  
D. A. NEUMAYER ◽  
A. H. COWLEY ◽  
R. A. JONES ◽  
J. G. EKERDT
Keyword(s):  
Film Growth ◽  
Single Source ◽  
Single Source Precursors ◽  
Gan Film
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