GaN film growth on Si substrate for sub-wavelength optical MEMS

2005 ◽  
Author(s):  
F.-R. Hu ◽  
K. Ochi ◽  
B.-S. Choi ◽  
Y. Kanamori ◽  
K. Hane
Keyword(s):  
Film Growth ◽  
Si Substrate ◽  
Optical Mems ◽  
Gan Film ◽  
Sub Wavelength

GaN Film Grown on Si Substrate for Monolithic Optical MEMS

2005 ◽  
Author(s):  
F.-R. Hu ◽  
K. Ochi ◽  
B.-S. Choi ◽  
Y. Kanamori ◽  
K. Hane
Keyword(s):  
Growth Conditions ◽  
Photonic Devices ◽  
Optical Systems ◽  
Si Substrate ◽  
Optical Mems ◽  
Light Emitting ◽  
Force Microscopy ◽  
Atomic Force ◽  
Mems Technology ◽  
Gan Film

GaN is a new and powerful material for photonic devices such as light emitting and laser diodes. On the other hand, optical MEMS technology is attractive for miniaturizing several optical systems. We are studying GaN film grown on Si substrate for the optical MEMS application in order to fabricate monolithic structure. In this paper, the characteristics of GaN film grown on Si substrate by MBE are reported. The growth conditions of GaN layer on Si substrate are studied. The surface morphology of the grown GaN film is measured by electron microscopy and atomic force microscopy. Furthermore, a preliminary grating structure is fabricated for a MEMS application.

Atomic assembly during GaN film growth: Molecular dynamics simulations

2006 ◽  
Vol 73 (4) ◽  
Author(s):  
X. W. Zhou ◽  
D. A. Murdick ◽  
B. Gillespie ◽  
H. N. G. Wadley
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Film Growth ◽  
Dynamics Simulations ◽  
Gan Film

Retarded Growth of Sputtered HfO2 Films on Germanium

2004 ◽  
Vol 811 ◽  
Author(s):  
Koji Kita ◽  
Masashi Sasagawa ◽  
Masahiro Toyama ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Film Growth ◽  
Early Stage ◽  
Gate Oxide ◽  
Interface Layer ◽  
Film Deposition ◽  
Si Substrate ◽  
Equivalent Thickness ◽  
Ternary Compounds ◽  
Si Substrates

ABSTRACTHfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

scholarly journals GaN film growth on LiNbO3surfaces using molecular beam epitaxy

2009 ◽  
Vol 187 ◽  
pp. 012013 ◽  
Author(s):  
Man Hoai Nam ◽  
Son Chul Goo ◽  
Moon Deock Kim ◽  
Woochul Yang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Gan Film

Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF–MBE

2005 ◽  
Vol 278 (1-4) ◽  
pp. 411-414 ◽  
Author(s):  
Ryuhei Kimura ◽  
Takeaki Suzuki ◽  
Masamichi Ouchi ◽  
Kouichi Ishida ◽  
Kiyoshi Takahashi
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Film Growth ◽  
Cubic Gan ◽  
Gan Film

Predictive Surface Kinetic Analysis: The Case of TiSi2 CVD

1993 ◽  
Vol 334 ◽  
Author(s):  
M. A. Mendicino ◽  
R. P. Southwell ◽  
E. G. Seebauer
Keyword(s):  
Gas Phase ◽  
Film Growth ◽  
Growth Conditions ◽  
Si Substrate ◽  
Quantitative Correlation ◽  
Selective Area ◽  
Metal Silicides ◽  
High Production ◽  
Reaction Stoichiometry ◽  
Area Deposition

Recently, TiSi2 has been the object of considerable study because of its low resistivity among the transition metal silicides and its compatibility with existing ULSI technology [1,2]. Film growth by CVD offers the potential for selective area deposition and high production throughput. However, selective CVD of TiSi2 from gas phase SiH4 and TiCl4 is usually accompanied by a competing reaction which consumes intolerable amounts of the Si substrate [3,4]. Controlling this consumption is crucial in TiSi2 growth; however, no quantitative correlation exists between silicon consumption and growth conditions or film thickness. Additionally, the reaction mechanism for TiSi2 growth is poorly understood, and some disagreement even exists about the reaction stoichiometry [5,6]. The combined CVD/UHV approach we have developed fills many gaps in the current understanding of TiSi2 CVD.

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