Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/Pt)3/Pb(Mg1/3Nb2/3)O3–PbTiO3 Multiferroic Heterostructures

ACS Nano ◽  
2017 ◽  
Vol 11 (4) ◽  
pp. 4337-4345 ◽  
Author(s):  
Bin Peng ◽  
Ziyao Zhou ◽  
Tianxiang Nan ◽  
Guohua Dong ◽  
Mengmeng Feng ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Voltage Control ◽  
Spin Reorientation ◽  
Spin Reorientation Transition ◽  
Multiferroic Heterostructures ◽  
Deterministic Switching

Physical and Magnetic Modification of Co/Pt Multilayers by Ion Irradiation

2002 ◽  
Vol 8 (4) ◽  
pp. 319-332 ◽  
Author(s):  
G.J. Kusinski ◽  
G. Thomas
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Irradiation ◽  
Strain Relaxation ◽  
Magnetic Domain ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Reorientation ◽  
Microstructural Changes ◽  
Spin Reorientation Transition ◽  
Before And After ◽  
Magnetic Modification

The microstructure of Co/Pt multilayers with large perpendicular magnetic anisotropy (PMA) was investigated before and after energetic ion irradiation. No pronounced microstructural changes were detected at ion doses sufficient to completely reduce the PMA and cause a spin reorientation transition to in-plane. Ion-induced displacement of Co and Pt atoms near Co/Pt interfaces lead to local “roughening” and Co layer strain relaxation, reducing the PMA. The magnetic domain confinement induced by ion irradiation and magnetic patterning by selective ion irradiation were also investigated.

scholarly journals Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy

2018 ◽  
Vol 30 (30) ◽  
pp. 1801639 ◽  
Author(s):  
Shishun Zhao ◽  
Lei Wang ◽  
Ziyao Zhou ◽  
Chunlei Li ◽  
Guohua Dong ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Reorientation ◽  
Spin Reorientation Transition

Perpendicular magnetic anisotropy and spin reorientation transition in L10 FePt films

2011 ◽  
Vol 109 (7) ◽  
pp. 07B760 ◽  
Author(s):  
Jae Young Ahn ◽  
Nyun Jong Lee ◽  
Tae Hee Kim ◽  
J.-H. Lee ◽  
Anny Michel ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Reorientation ◽  
Spin Reorientation Transition

scholarly journals Non-monotonic magnetic anisotropy behavior as a function of adsorbate coverage in Fe ultrathin films near the spin reorientation transition

2021 ◽  
Author(s):  
A. Quesada ◽  
G. Chen ◽  
A. T. N'Diaye ◽  
P. Wang ◽  
Y. Z. Wu ◽  
...  
Keyword(s):  
Carbon Monoxide ◽  
Magnetic Anisotropy ◽  
Ultrathin Films ◽  
Co Adsorption ◽  
Spin Reorientation ◽  
Spin Reorientation Transition ◽  
Out Of Plane

Carbon monoxide (CO) adsorption on ultrathin fcc Fe films is known to result in the rotation of magnetization from out-of-plane to in-plane.

scholarly journals Origin of perpendicular magnetic anisotropy in amorphous thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Daniel Lordan ◽  
Guannan Wei ◽  
Paul McCloskey ◽  
Cian O’Mathuna ◽  
Ansar Masood
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Functional Materials ◽  
Spin Reorientation ◽  
Amorphous Films ◽  
Amorphous Thin Films ◽  
Magnetic Performance ◽  
Out Of Plane ◽  
Sputtering Pressure

AbstractThe emergence of perpendicular magnetic anisotropy (PMA) in amorphous thin films, which eventually transforms the magnetic spins form an in-plane to the out-of-plane configuration, also known as a spin-reorientation transition (SRT), is a fundamental roadblock to attain the high flux concentration advantage of these functional materials for broadband applications. The present work is focused on unfolding the origin of PMA in amorphous thin films deposited by magnetron sputtering. The amorphous films were deposited under a broad range of sputtering pressure (1.6–6.2 mTorr), and its effect on the thin film growth mechanisms was correlated to the static global magnetic behaviours, magnetic domain structure, and dynamic magnetic performance. The films deposited under low-pressure revealed a dominant in-plane uniaxial anisotropy along with an emerging, however feeble, perpendicular component, which eventually evolved as a dominant PMA when deposited under high-pressure sputtering. This change in the nature of anisotropy redefined the orientation of spins from in-plane to out-of-plane. The SRT in amorphous films was attributed to the dramatic change in the growth mechanism of disorder atomic structure from a homogeneously dispersed to a porous columnar microstructure. We suggest the origin of PMA is associated with the columnar growth of the amorphous films, which can be eluded by a careful selection of a deposition pressure regime to avoid its detrimental effect on the soft magnetic performance. To the author’s best knowledge, no such report links the sputtering pressure as a governing mechanism of perpendicular magnetisation in technologically important amorphous thin films.

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