scholarly journals Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, ⟨111⟩-Oriented GaSb Nanowires Enabled by Vapor–Solid–Solid Chemical Vapor Deposition

ACS Nano ◽  
2017 ◽  
Vol 11 (4) ◽  
pp. 4237-4246 ◽  
Author(s):  
Zai-xing Yang ◽  
Lizhe Liu ◽  
SenPo Yip ◽  
Dapan Li ◽  
Lifan Shen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxide ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Electrical Properties of Ultrathin Al2O3 Films Grown by Metalorganic Chemical Vapor Deposition for Advanced Complementary Metal-oxide Semiconductor Gate Dielectric Applications

2005 ◽  
Vol 20 (6) ◽  
pp. 1536-1543 ◽  
Author(s):  
Spyridon Skordas ◽  
Filippos Papadatos ◽  
Steven Consiglio ◽  
Eric T. Eisenbraun ◽  
Alain E. Kaloyeros ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Metal Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Silicon Oxynitride ◽  
Oxide Semiconductor ◽  
Organic Chemical

The electrical properties of ultrathin amorphous Al2O3 films, grown by low temperature metal-organic chemical vapor deposition from aluminum(III) 2,4-pentanedionate and water as co-reactants, were examined for potential applications as gate dielectrics in emerging complementary metal-oxide semiconductor technologies. High-frequency capacitance–voltage and current–voltage techniques were used to evaluate Al2O3 films deposited on silicon oxynitride on n-type silicon (100) substrates, with thickness ranging from 2.5 to 6.5 nm, as a function of postdeposition annealing regimes. Dielectric constant values ranging from 11.0 to11.5 were obtained, depending on the annealing method used. Metal-insulator-semiconductor devices were demonstrated with net equivalent oxide thickness values of 1.3 nm. Significant charge traps were detected in the as-deposited films and were mostly passivated by the subsequent annealing treatment. The main charge injection mechanism in the dielectric layer was found to follow a Poole–Frenkel behavior, with post-annealed films exhibiting leakage current an order of magnitude lower than that of equivalent silicon oxide films.

Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric

2005 ◽  
Vol 87 (5) ◽  
pp. 051922 ◽  
Author(s):  
N. Lu ◽  
W. Bai ◽  
A. Ramirez ◽  
C. Mouli ◽  
A. Ritenour ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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