scholarly journals Electronic Structure of the Dark Surface of the Weak Topological Insulator Bi14Rh3I9

ACS Nano ◽  
2016 ◽  
Vol 10 (4) ◽  
pp. 3995-4003 ◽  
Author(s):  
Christian Pauly ◽  
Bertold Rasche ◽  
Klaus Koepernik ◽  
Manuel Richter ◽  
Sergey Borisenko ◽  
...  
2019 ◽  
Vol 100 (19) ◽  
Author(s):  
I. A. Shvets ◽  
I. I. Klimovskikh ◽  
Z. S. Aliev ◽  
M. B. Babanly ◽  
F. J. Zúñiga ◽  
...  

2020 ◽  
Vol 102 (16) ◽  
Author(s):  
Sabin Regmi ◽  
M. Mofazzel Hosen ◽  
Barun Ghosh ◽  
Bahadur Singh ◽  
Gyanendra Dhakal ◽  
...  

APL Materials ◽  
2020 ◽  
Vol 8 (2) ◽  
pp. 021105 ◽  
Author(s):  
D. A. Estyunin ◽  
I. I. Klimovskikh ◽  
A. M. Shikin ◽  
E. F. Schwier ◽  
M. M. Otrokov ◽  
...  

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Wonhee Ko ◽  
Insu Jeon ◽  
Hyo Won Kim ◽  
Hyeokshin Kwon ◽  
Se-Jong Kahng ◽  
...  

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Jihwey Park ◽  
Yeong-Ah Soh ◽  
Gabriel Aeppli ◽  
Xiao Feng ◽  
Yunbo Ou ◽  
...  

Abstract Thin films of topological insulators are often capped with an insulating layer since topological insulators are known to be fragile to degradation. However, capping can hinder the observation of novel transport properties of the surface states. To understand the influence of capping on the surface states, it is crucial to understand the crystal structure and the atomic arrangement at the interfaces. Here, we use x-ray diffraction to establish the crystal structure of magnetic topological insulator Cr-doped (Bi,Sb)2Te3 (CBST) films grown on SrTiO3 (1 1 1) substrates with and without a Te capping layer. We find that both the film and capping layer are single crystal and that the crystal quality of the film is independent of the presence of the capping layer, but that x-rays cause sublimation of the CBST film, which is prevented by the capping layer. Our findings show that the different transport properties of capped films cannot be attributed to a lower crystal quality but to a more subtle effect such as a different electronic structure at the interface with the capping layer. Our results on the crystal structure and atomic arrangements of the topological heterostructure will enable modelling the electronic structure and design of topological heterostructures.


2012 ◽  
Vol 407 (17) ◽  
pp. 3664-3670 ◽  
Author(s):  
Haiyan Wang ◽  
Xiongwen Chen ◽  
Xiaoying Zhou ◽  
Lebo Zhang ◽  
Guanghui Zhou

2017 ◽  
Vol 407 ◽  
pp. 371-378 ◽  
Author(s):  
Turgut Yilmaz ◽  
William Hines ◽  
Fu-Chang Sun ◽  
Ivo Pletikosić ◽  
Joseph Budnick ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 423-428 ◽  
Author(s):  
Pei-Yu Chuang ◽  
Shu-Hsuan Su ◽  
Cheong-Wei Chong ◽  
Yi-Fan Chen ◽  
Yu-Heng Chou ◽  
...  

Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE).


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