Toward a Practical Zn Powder Anode: Ti3C2Tx MXene as a Lattice-Match Electrons/Ions Redistributor

ACS Nano ◽  
2021 ◽  
Author(s):  
Xinliang Li ◽  
Qing Li ◽  
Yue Hou ◽  
Qi Yang ◽  
Ze Chen ◽  
...  
Keyword(s):  
Lattice Match

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

1991 ◽  
Vol 49 ◽  
pp. 850-851
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson
Keyword(s):  
Semiconductor Lasers ◽  
Wide Bandgap ◽  
Semiconductor Diode ◽  
Visible Range ◽  
P System ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Semiconductor Diode Laser ◽  
Thin Film Semiconductors ◽  
Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Chemical and Electrochemical Heteroepitaxial Growth of Chalcogenide Semiconductors from Solutions

1996 ◽  
Vol 451 ◽  
Author(s):  
D. Lincot ◽  
M. J. Furlong ◽  
M. Froment ◽  
R. Cortes ◽  
M. C. Bernard
Keyword(s):  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Basic Principles ◽  
Lattice Match ◽  
X Ray ◽  
Chalcogenide Semiconductors ◽  
Influence Of Temperature On ◽  
Deposition Processes ◽  
A Site ◽  
Site Selective

ABSTRACTChalcogenide semiconductors have been deposited epitaxially from aqueous solutions either chemically or electrochemically at growth rates of up to 0.7 μmhr−1. After recalling the basic principles of these deposition processes, results are presented concerning chemically deposited CdS on InP, GaP and CuInSe2 substrates, electrodeposited CdTe on InP, and CdSAnP heterostructures. Characterisation of these structures by RHEED, TEM, HRTEM, and glazing angle X ray diffraction allows to analyse the effects of substrate orientation, polarity, lattice match plus the influence of temperature on epitaxial growth. These results are discussed in terms of self organisation and a site selective growth mechanisms due to the free enegy of formation of each compound.

Effects of Film Interfaces on the Properties of Poly-Si Grown by The Metal-Induced Technique for Solar Cell Applications

2003 ◽  
Vol 796 ◽  
Author(s):  
Chunhai Ji ◽  
Wayne A. Anderson
Keyword(s):  
Seed Layer ◽  
Lattice Mismatch ◽  
Xrd Analysis ◽  
Crystal Defects ◽  
Photon Absorption ◽  
X Ray Diffraction ◽  
Lattice Match ◽  
Silicide Layer ◽  
Layer Sample ◽  
The One

ABSTRACTIn the metal-induced growth (MIG) process, the poly-Si layer hetero-epitaxially grows from a thin silicide layer, formed by reaction of a metal seed-layer and sputtered silicon, due to an extremely close lattice match between silicon and the metal silicide. The produced poly-Si has shown a promising device quality for photovoltaic applications. Recent results show that the interface of the silicide and poly-Si has a significant effect on the properties of the poly-Si which works as an active layer for photon absorption. In the study of the MIG process, two metals were used as a seed-layer, i.e. Ni and Co. Although CoSi2has a larger lattice mismatch with Si (1.2%) than does NiSi2(0.4%), the poly-Si growing from Co has a smoother interface between the poly-Si and silicide, while the one for the Ni seed-layer samples is rather rough. Backscattered XSEM shows that the Ni-contained phase extended into the Si layer by forming long spikes. This might cause crystal defects in the Si layer. The Auger depth profile also showed that the Ni atoms diffuse into the Si layer much more than does the Co. This kind of difference in interface structure causes the different properties of the poly-Si layer. X-ray diffraction (XRD) analysis on the Si layer showed that the Co seed-layer sample had a predominant growth orientation of (220) and the FWHM of 0.2°. The Ni seed-layer samples grew mainly in both <111> and <220> direction, with FWHM of 0.3° and 0.4°, respectively. By comparison, the poly-Si from the Co seed-layer had a higher carrier lifetime of 0.458μs compared to 0.305μs from Ni.

Novel Electronics Enabled by Rare Earth Arsenides Buried in III-V Semiconductors

1993 ◽  
Vol 301 ◽  
Author(s):  
S. James Allen ◽  
Dan Brehmer ◽  
C.J. PalmstrØm
Keyword(s):  
Rare Earth ◽  
Epitaxial Layers ◽  
Hot Electron ◽  
Surface Geometry ◽  
Electron Effective Mass ◽  
Metal Base ◽  
Lattice Match ◽  
Linear Material ◽  
Shubnikov De Haas Oscillations ◽  
Electron Transistors

ABSTRACTHeterostructures consisting of III-V semiconductors and epitaxial layers of the rare earth monoarsenides can be grown by molecular beam epitaxy. By alloying ErAs with ScAs, lattice match can be achieved with (Al,Ga)As. Using magneto-transport measurements, we show that these layers are semi-metallic with equal electron and hole concentrations, 3.0 ×1020 cm−3. Shubnikov-de Haas oscillations are used to confirm the predicted Fermi surface geometry and measure the electron effective mass and the coupling to the 4f spin on the Er3+ ion. Remarkably, the material shows no transition from semimetal to semiconductor as the film thickness is reduced to three monolayers. Below three monolayers the films are not uniform and are believed to consist of islands three monolayers high.This system provides a unique opportunity to explore novel electronics based on controlled transport through semimetal/semiconductor heterostructures. Lateral transport through semimetal islands immersed in a δ-doped layer may provide a fast non-linear material for THz electronics. Vertical transport through thin epitaxial layers may enable resonant tunneling hot electron transistors with a semi-metal base. Preliminary experiments on transistor like test structures measure some transfer through a 10 monolayer thick semimetal base. They also identify overgrowth of the III-V semiconductor on the semimetal layer as the key materials issue.

Growth study of epitaxial FexZn1−xF2 thin films

2001 ◽  
Vol 16 (6) ◽  
pp. 1769-1775 ◽  
Author(s):  
J. McChesney ◽  
M. Hetzer ◽  
H. Shi ◽  
T. Charlton ◽  
D. Lederman
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Magnetic Phase Diagram ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Growth Study ◽  
Lattice Match ◽  
Different Temperatures ◽  
Bulk Single Crystals ◽  
The Ideal

The FexZn1−xF2 alloy has been shown to be a model system for studying the magnetic phase diagram of dilute magnets. Whereas the growth of bulk single crystals with fixed Zn concentrations is difficult, the thin film growth is comparatively simpler and more flexible. To gain an understanding of the growth of FexZn1−xF2 films, a method was developed to grow smooth films at fixed concentrations. This was done by depositing a MgF2 buffer layer on MgF2(001) substrates and then depositing FeF2 and ZnF2 [001]-orientated epitaxial thin films at different temperatures. Surprisingly, the lattice spacing depends strongly on the growth temperature, for 44-nm-thick FeF2 films and 77-nm-thick ZnF2 films. This indicates a significant amount of stress, despite the close lattice match between the films and the MgF2 substrate. Thick alloy samples (approximately 500 nm thick) were grown by co-evaporation from the FeF2 and ZnF2 sources at the ideal temperature determined from the growth study, and their concentration was accurately determined using x-ray diffraction.

scholarly journals Ice nucleation efficiency of AgI: review and new insights

2016 ◽  
Author(s):  
Claudia Marcolli ◽  
Baban Nagare ◽  
André Welti ◽  
Ulrike Lohmann
Keyword(s):  
Water Saturation ◽  
Experimental Studies ◽  
Freezing Temperature ◽  
Nucleating Agent ◽  
Companion Paper ◽  
Chem Phys ◽  
Ice Nucleation ◽  
Lattice Match ◽  
Ice Nuclei ◽  
Immersion Freezing

Abstract. AgI is one of the best investigated ice nuclei. It has relevance for the atmosphere since it is used for glaciogenic cloud seeding. Theoretical and experimental studies over the last sixty years provide a complex picture of silver iodide as ice nucleating agent with conflicting and inconsistent results. This review compares experimental ice nucleation studies in order to analyse the factors that influence the ice nucleation ability of AgI. We have performed experiments to compare contact and immersion freezing by AgI. This is one of three papers that describe and analyse contact and immersion freezing experiments with AgI. In Nagare et al. (Nagare, B., Marcolli, C., Stetzer, O., and Lohmann, U.: Comparison of measured and calculated collision efficiencies at low temperatures, Atmos. Chem. Phys., 15, 13759–13776, doi:10.5194/acp-15-13759-2015, 2015) collision efficiencies based on contact freezing experiments with AgI are determined and compared with theoretical formulations. In a companion paper, contact freezing experiments are compared with immersion freezing experiments conducted with AgI, kaolinite, and ATD as ice nuclei. The following picture emerges from this analysis: The ice nucleation ability of AgI seems to be enhanced when the AgI particle is on the surface of a droplet, which is indeed the position that a particle takes when it can freely move in a droplet. Ice nucleation by particles with surfaces exposed to air, depends on water adsorption. AgI surfaces seem to be most efficient as ice nuclei when they are exposed to relative humidity at or even above water saturation. For AgI particles that are totally immersed in water, the freezing temperature increases with increasing AgI surface area. Higher threshold freezing temperature seem to correlate with improved lattice matches as can be seen for AgI-AgCl solid solutions and 3AgI•NH4I•6H2O, which have slightly better lattice matches with ice than AgI and also higher threshold freezing temperatures. However, the effect of a good lattice match is annihilated when the surfaces have charges. Also, the ice nucleation ability seems to decrease during dissolution of AgI particles. This introduces an additional history and time dependence of ice nucleation in cloud chambers with short residence times.

Engineered oxide thin films as 100% lattice match buffer layers for YBCO coated conductors

2003 ◽  
Vol 47 (12) ◽  
pp. 2171-2175 ◽  
Author(s):  
Y. Akin ◽  
Z.K. Heiba ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Thin Films ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Oxide Thin Films ◽  
Lattice Match ◽  
Ybco Coated Conductors

scholarly journals Predicting heterogeneous ice nucleation with a data-driven approach

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Martin Fitzner ◽  
Philipp Pedevilla ◽  
Angelos Michaelides
Keyword(s):  
Liquid Water ◽  
Ice Nucleation ◽  
Lattice Match ◽  
Density Reduction ◽  
Local Ordering ◽  
Data Driven Approach ◽  
Quantitative Understanding ◽  
Foreign Materials ◽  
Learning Analysis ◽  
Heterogeneous Ice Nucleation

Abstract Water in nature predominantly freezes with the help of foreign materials through a process known as heterogeneous ice nucleation. Although this effect was exploited more than seven decades ago in Vonnegut’s pioneering cloud seeding experiments, it remains unclear what makes a material a good ice former. Here, we show through a machine learning analysis of nucleation simulations on a database of diverse model substrates that a set of physical descriptors for heterogeneous ice nucleation can be identified. Our results reveal that, beyond Vonnegut’s connection with the lattice match to ice, three new microscopic factors help to predict the ice nucleating ability. These are: local ordering induced in liquid water, density reduction of liquid water near the surface and corrugation of the adsorption energy landscape felt by water. With this we take a step towards quantitative understanding of heterogeneous ice nucleation and the in silico design of materials to control ice formation.

scholarly journals Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C

2019 ◽  
Vol 117 (2) ◽  
pp. 902-906 ◽  
Author(s):  
Mark Hettick ◽  
Hao Li ◽  
Der-Hsien Lien ◽  
Matthew Yeh ◽  
Tzu-Yi Yang ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Indium Tin Oxide ◽  
High Performance ◽  
High Growth ◽  
Oxide Semiconductor ◽  
High Electron ◽  
Lattice Match ◽  
Direct Growth ◽  
Shape Controlled

III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)–coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.

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