Solid-Phase Epitaxy of Perovskite High Dielectric PrAlO3 Films Grown by Atomic Layer Deposition for Use in Two-Dimensional Electronics and Memory Devices

2019 ◽  
Vol 2 (11) ◽  
pp. 7449-7458 ◽  
Author(s):  
Wathsala L. I. Waduge ◽  
Yajin Chen ◽  
Peng Zuo ◽  
Navoda Jayakodiarachchi ◽  
Thomas F. Kuech ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Solid Phase ◽  
Atomic Layer ◽  
Memory Devices ◽  
Solid Phase Epitaxy ◽  
Two Dimensional ◽  
Layer Deposition ◽  
High Dielectric

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

Low-temperature wafer-scale synthesis of two-dimensional SnS2

Nanoscale ◽  
2018 ◽  
Vol 10 (37) ◽  
pp. 17712-17721 ◽  
Author(s):  
Jung Joon Pyeon ◽  
In-Hwan Baek ◽  
Weon Cheol Lim ◽  
Keun Hwa Chae ◽  
Seong Ho Han ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Wafer Scale ◽  
Layer Deposition

Two-dimensional continuous SnS2 is synthesized over a wafer at low-temperature (≤350 °C) by sulfurization combined with atomic layer deposition.

scholarly journals Dissociation reaction of B2H6 on TiN surfaces during atomic layer deposition: first-principles study

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55750-55755 ◽  
Author(s):  
Hwanyeol Park ◽  
Sungwoo Lee ◽  
Ho Jun Kim ◽  
Euijoon Yoon ◽  
Gun-Do Lee
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Atomic Layer ◽  
Fabrication Process ◽  
Device Performance ◽  
Memory Devices ◽  
Dissociation Reaction ◽  
First Principles Study ◽  
Layer Deposition

In the fabrication process of memory devices, a void-free tungsten (W) gate process with good conformability is very important for improving the conductivity of the W gate, leading to enhancement of device performance.

scholarly journals Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition

2015 ◽  
Vol 118 (11) ◽  
pp. 115303 ◽  
Author(s):  
Thong Q. Ngo ◽  
Nicholas J. Goble ◽  
Agham Posadas ◽  
Kristy J. Kormondy ◽  
Sirong Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Electron Gas ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Layer Deposition ◽  
Dimensional Electron Gas

Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2 S-Treated Gaas

2012 ◽  
Vol 516-517 ◽  
pp. 1945-1948
Author(s):  
Ming Kwei Lee ◽  
Chih Feng Yen ◽  
Sheng Hsiung Yang ◽  
Jung Chan Lee ◽  
Chi Hsuan Cheng ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Leakage Currents ◽  
Mos Capacitor ◽  
Native Oxides ◽  
Layer Deposition ◽  
High Dielectric ◽  
P Type

The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited Al2O3 can further remove the residue native oxides and lower the leakage current on (NH4)2S treated GaAs from self-cleaning and high bandgap. For further stacked with high dielectric constant TiO2 also prepared by atomic layer deposition on Al2O3/(NH4)2S treated p-type GaAs MOS capacitor, the leakage currents can reach 1.9 × 10-8 and 3.1 × 10-6 A/cm2 at ± 2 MV/cm. The dielectric constant is 25.

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