Thermoelasticity of Nanoscale Silicon Carbide Membranes Excited by Extreme Ultraviolet Transient Gratings: Implications for Mechanical and Thermal Management

2019 ◽  
Vol 2 (8) ◽  
pp. 5132-5139
Author(s):  
D. Naumenko ◽  
R. Mincigrucci ◽  
M. Altissimo ◽  
L. Foglia ◽  
A. Gessini ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Thermal Management ◽  
Extreme Ultraviolet ◽  
Transient Gratings

Effect of energetic electron and proton bombardment on the reflectance of silicon-carbide mirrors in the extreme-ultraviolet region

1994 ◽  
Vol 33 (25) ◽  
pp. 5902 ◽  
Author(s):  
G. E. Holland ◽  
J. F. Seely ◽  
R. P. McCoy ◽  
K. F. Dymond ◽  
C. Rollins ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Extreme Ultraviolet ◽  
Energetic Electron ◽  
Ultraviolet Region ◽  
Proton Bombardment

Performance of high-density cast silicon carbide in the extreme ultraviolet

1997 ◽  
Vol 36 (19) ◽  
pp. 4409 ◽  
Author(s):  
Ritva A. M. Keski-Kuha ◽  
Charles M. Fleetwood ◽  
Joseph Robichaud
Keyword(s):  
Silicon Carbide ◽  
Extreme Ultraviolet ◽  
High Density

scholarly journals Power Savings with all SiC Inverter in Electric Traction applications

2019 ◽  
Vol 87 ◽  
pp. 01014
Author(s):  
B.K. Chakravarthy ◽  
G. Sree Lakshmi
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Thermal Management ◽  
Power Converter ◽  
System Efficiency ◽  
Passive Components ◽  
Switching Losses ◽  
Higher Power ◽  
Electric Traction ◽  
State Resistance

The advantage of Silicon Carbide (SiC) based devices are less thermal management requirements and smaller passive components which result in higher power density. SiC devices have higher blocking voltages, lower on-state resistance and switching losses and higher thermal conductivity and operating temperatures. SiC devices can operate at higher voltages, higher frequencies and higher junction temperatures than comparable Si devices, which results in significant reduction in weight and size of the power converter and increase in system efficiency.

scholarly journals Generation of periodic structures on SiC upon laser plasma XUV/NIR radiations

2013 ◽  
Vol 31 (3) ◽  
pp. 547-550 ◽  
Author(s):  
L. Gemini ◽  
D. Margarone ◽  
S. Trusso ◽  
L. Juha ◽  
J. Limpouch ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Laser Pulse ◽  
Extreme Ultraviolet ◽  
Periodic Structures ◽  
Laser Pulses ◽  
Low Density Polyethylene ◽  
Low Density ◽  
Efficient Coupling ◽  
Sic Film

AbstractSurface periodic structures are generated upon irradiation of a silicon carbide (SiC) thin film by the plasma produced by 40 fs pulses from a Ti:Sapphire laser focused onto a thick low density polyethylene (LDPE) foil facing the SiC film. Independently of the number of laser pulses applied, these structures, with average regular periodicity of 710 nm, are evident throughout all irradiated areas. We attribute their formation to the efficient coupling of the unfocused femtosecond laser pulse with the incoherent extreme ultraviolet component of the laser-generated LDPE plasma.

Electromechanical Computing at 500°C with Silicon Carbide

Science ◽  
2010 ◽  
Vol 329 (5997) ◽  
pp. 1316-1318 ◽  
Author(s):  
Te-Hao Lee ◽  
Swarup Bhunia ◽  
Mehran Mehregany
Keyword(s):  
Silicon Carbide ◽  
Thermal Management ◽  
High Performance ◽  
Field Effect Transistors ◽  
Complementary Metal Oxide Semiconductor ◽  
Logic Circuits ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Propulsion Systems ◽  
Heat Sinking

Logic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a promising approach for low-power, high-performance logic operation at temperatures higher than 300°C, beyond the capability of conventional silicon technology. These switches are capable of achieving virtually zero off-state current, microwave operating frequencies, radiation hardness, and nanoscale dimensions. Here, we report a microfabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at 500°C with ultralow leakage current.

The Thermal Expansion Behaviors of Cu-SiCp Composites

2013 ◽  
Vol 795 ◽  
pp. 237-240
Author(s):  
K. Azmi ◽  
M.N. Derman ◽  
Mohd Mustafa Al Bakri Abdullah
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Thermal Expansion ◽  
Thermal Management ◽  
Thermophysical Properties ◽  
Copper Matrix ◽  
Experimental Results ◽  
High Thermal Conductivity ◽  
Coating Process ◽  
Electroless Coating

The demand for advanced thermal management materials such as silicon carbide reinforced copper matrix (Cu-SiCp) composites is increasing due to their high thermal conductivity and low CTE properties. However, the weak bonding between the copper matrix and the SiCp reinforcement degrades the thermophysical properties of the composites. In order to improve the bonding between the two constituents, the SiCp were copper coated (Cu-Coated) via electroless coating process. Based on the experimental results, the CTE values of the Cu-Coated Cu-SiCp composites were found significantly lower than those of the non-Coated Cu-SiCp composites. The CTEs of the Cu-Coated Cu-SiCp composites were in agreement with Kernels model which accounts for both the shear and isostatic stresses developed in the component phases.

scholarly journals Four-wave mixing experiments with extreme ultraviolet transient gratings

Nature ◽  
2015 ◽  
Vol 520 (7546) ◽  
pp. 205-208 ◽  
Author(s):  
F. Bencivenga ◽  
R. Cucini ◽  
F. Capotondi ◽  
A. Battistoni ◽  
R. Mincigrucci ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Transient Gratings
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