Production of extreme ultraviolet (EUV) quality silicon carbide (SiC) aspheric optics

2008 ◽  
Author(s):  
Jay Schwartz ◽  
Andrea Arneson ◽  
Joseph Robichaud
Keyword(s):  
Silicon Carbide ◽  
Extreme Ultraviolet ◽  
Aspheric Optics

Effect of energetic electron and proton bombardment on the reflectance of silicon-carbide mirrors in the extreme-ultraviolet region

1994 ◽  
Vol 33 (25) ◽  
pp. 5902 ◽  
Author(s):  
G. E. Holland ◽  
J. F. Seely ◽  
R. P. McCoy ◽  
K. F. Dymond ◽  
C. Rollins ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Extreme Ultraviolet ◽  
Energetic Electron ◽  
Ultraviolet Region ◽  
Proton Bombardment

Performance of high-density cast silicon carbide in the extreme ultraviolet

1997 ◽  
Vol 36 (19) ◽  
pp. 4409 ◽  
Author(s):  
Ritva A. M. Keski-Kuha ◽  
Charles M. Fleetwood ◽  
Joseph Robichaud
Keyword(s):  
Silicon Carbide ◽  
Extreme Ultraviolet ◽  
High Density

scholarly journals Generation of periodic structures on SiC upon laser plasma XUV/NIR radiations

2013 ◽  
Vol 31 (3) ◽  
pp. 547-550 ◽  
Author(s):  
L. Gemini ◽  
D. Margarone ◽  
S. Trusso ◽  
L. Juha ◽  
J. Limpouch ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Laser Pulse ◽  
Extreme Ultraviolet ◽  
Periodic Structures ◽  
Laser Pulses ◽  
Low Density Polyethylene ◽  
Low Density ◽  
Efficient Coupling ◽  
Sic Film

AbstractSurface periodic structures are generated upon irradiation of a silicon carbide (SiC) thin film by the plasma produced by 40 fs pulses from a Ti:Sapphire laser focused onto a thick low density polyethylene (LDPE) foil facing the SiC film. Independently of the number of laser pulses applied, these structures, with average regular periodicity of 710 nm, are evident throughout all irradiated areas. We attribute their formation to the efficient coupling of the unfocused femtosecond laser pulse with the incoherent extreme ultraviolet component of the laser-generated LDPE plasma.

Thermoelasticity of Nanoscale Silicon Carbide Membranes Excited by Extreme Ultraviolet Transient Gratings: Implications for Mechanical and Thermal Management

2019 ◽  
Vol 2 (8) ◽  
pp. 5132-5139
Author(s):  
D. Naumenko ◽  
R. Mincigrucci ◽  
M. Altissimo ◽  
L. Foglia ◽  
A. Gessini ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Thermal Management ◽  
Extreme Ultraviolet ◽  
Transient Gratings

scholarly journals Extreme ultraviolet polarizing optics using bare and aluminum-coated silicon carbide

1995 ◽  
Vol 34 (28) ◽  
pp. 6438 ◽  
Author(s):  
R. M. A. Azzam ◽  
A. M. Kan’an
Keyword(s):  
Silicon Carbide ◽  
Extreme Ultraviolet

Degradation in Euv Reflectance of Ion-Sputtered Sic Films

1994 ◽  
Vol 354 ◽  
Author(s):  
Dan Schwarcz ◽  
Ritva A.M. Keski-Kuha
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Extreme Ultraviolet ◽  
Chemical Vapor ◽  
Optical Components ◽  
Optical Surfaces ◽  
Sic Films

AbstractSilicon Carbide (SiC) formed by chemical vapor deposition (CVD) has the highest reflectivity in the extreme ultraviolet (EUV) of any currently used optical material. The high temperature required for the CVD process, however, limits its suitability for coating optical components. To address this problem thin films have been sputtered onto optical surfaces from CVD βSiC targets. These films, while having reflectivity lower than that of CVD SiC, are nonetheless the best coatings available for reflectance in the spectral region below 1000À. While the initial properties are good, the EUV reflectivity degrades with time after deposition. A relative decrease of about 25% is evident in the reflectivity at 920Â after 2.5 years, and about 85% of this change occurs in the first three months. In fact, a decrease is observed in the minutes following deposition. In this study the degradation is characterized and a mechanism is proposed. Efforts underway to reduce or eliminate the degradation are discussed.

Effect of oxygen atom bombardment on the reflectance of silicon carbide mirrors in the extreme ultraviolet region

1993 ◽  
Vol 32 (10) ◽  
pp. 1805 ◽  
Author(s):  
J. F. Seely ◽  
G. E. Holland ◽  
W. R. Hunter ◽  
R. P. McCoy ◽  
K. F. Dymond ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Oxygen Atom ◽  
Extreme Ultraviolet ◽  
Ultraviolet Region ◽  
Effect Of Oxygen

Reflectivity of Silicon Carbide in the Extreme Ultraviolet

1986 ◽  
Author(s):  
Stanley Mrowka ◽  
Patrick Jelinsky ◽  
Stuart Bowyer ◽  
Greg Sanger ◽  
W. J. Choyke
Keyword(s):  
Silicon Carbide ◽  
Extreme Ultraviolet
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