Silicon Oxycarbide Accelerated Chemical Vapor Deposition of Graphitic Networks on Ceramic Substrates for Thermal Management Enhancement

2019 ◽  
Vol 2 (1) ◽  
pp. 452-458 ◽  
Author(s):  
Paul D. Garman ◽  
Jared M. Johnson ◽  
Vishank Talesara ◽  
Hao Yang ◽  
Dan Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Management ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Oxycarbide ◽  
Ceramic Substrates

Synthesis of Carbon Tubes Using Microwave Plasma-assisted Chemical Vapor Deposition

2000 ◽  
Vol 15 (8) ◽  
pp. 1749-1753 ◽  
Author(s):  
Qing Zhang ◽  
S. F. Yoon ◽  
J. Ahn ◽  
Bo Gan ◽  
Rusli ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Iron Oxide Particles ◽  
Ceramic Substrates ◽  
Field Emission Current ◽  
Electron Field ◽  
Oxide Particles

Carbon tubes were successfully produced using microwave plasma-enhanced chemical vapor deposition on silicon, quartz, and ceramic substrates. The carbon tubes, about 80–100 nm in diameter and a few tens of microns in length, were formed under methane and hydrogen plasma at 720 °C with the aid of iron oxide particles. In this approach, an average tube density of about 109 cm−2 was obtained. The crooked and nonuniform diameters of some tubes suggested that they were composed of incompletely crystallized graphitic shells due to existing defects. The characteristic of the tubes grown upward on the silicon substrate accounted for a remarkably large electron field emission current of 0.1 mA/cm2 from the surface of the tube sample at a low turn-on field of 3 V/μm.

scholarly journals The Chemical Vapor Deposition of Zirconium Carbide onto Ceramic Substrates

1998 ◽  
Vol 555 ◽  
Author(s):  
John A. Glass ◽  
Nick Palmisiano ◽  
R. Edward Welsh
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Zirconium Carbide ◽  
Chemical Vapor ◽  
High Melting Point ◽  
Ceramic Substrates ◽  
Film Density ◽  
Compositional Changes ◽  
Controlled Preparation

AbstractZirconium carbide is an attractive ceramic material due to its unique properties such as high melting point, good thermal conductivity, and chemical resistance. The controlled preparation of zirconium carbide films of superstoichiometric, stoichiometric, and substoichiometric compositions has been achieved utilizing zirconium tetrachloride and methane precursor gases in an atmospheric pressure high temperature chemical vapor deposition system. Laminar and equiaxial microcrystalline morphologies were obtained for superstoichiometric and substoichiometric zirconium carbide; respectively, allowing cursory metallographic identification of composition. Observed reductions in film density associated with zirconium carbide films that contain additional free carbon or excess zirconium are reported. These changes in film density were found to be consistent with compositional changes. An apparently linear relationship (correlation of 0.99) between methane flow in this chemical vapor deposition system and zirconium carbide stoichiometry in the substoichiometric range deposited above ZrC0.61 has been observed.

Luminescent silicon oxycarbide thin films obtained with monomethyl-silane by hot-wire chemical vapor deposition

2019 ◽  
Vol 780 ◽  
pp. 341-346 ◽  
Author(s):  
J.R. Ramos-Serrano ◽  
Y. Matsumoto ◽  
A. Méndez-Blas ◽  
A. Dutt ◽  
C. Morales ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Oxycarbide ◽  
Hot Wire
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