scholarly journals Structural Evolution of Molybdenum Disulfide Prepared by Atomic Layer Deposition for Realization of Large Scale Films in Microelectronic Applications

2018 ◽  
Vol 1 (8) ◽  
pp. 4028-4037 ◽  
Author(s):  
Steven Letourneau ◽  
Matthias J. Young ◽  
Nicholas M. Bedford ◽  
Yang Ren ◽  
Angel Yanguas-Gil ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Molybdenum Disulfide ◽  
Large Scale ◽  
Structural Evolution ◽  
Atomic Layer ◽  
Layer Deposition

Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

MRS Bulletin ◽  
2009 ◽  
Vol 34 (7) ◽  
pp. 493-503 ◽  
Author(s):  
Robert M. Wallace ◽  
Paul C. McIntyre ◽  
Jiyoung Kim ◽  
Yoshio Nishi
Keyword(s):  
Atomic Layer Deposition ◽  
Integrated Circuits ◽  
Large Scale ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Current Status ◽  
Scale Production ◽  
Transistor Channel ◽  
Layer Deposition ◽  
Field Effect Devices

AbstractThe prospect of utilizing alternative transistor channel materials for ultrahigh performance transistors will require suitable gate dielectrics for surface-channel field-effect devices. With the utilization of deposited gate dielectrics in large-scale production for Si-based integrated circuits by atomic layer deposition, extending this technology to channel materials that exhibit high bulk mobility behavior is of interest. A review of the current status for atomic layer deposited high-κ dielectrics on Ge and III–V channel materials is presented.

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