Stabilizing the Plasmonic Response of Titanium Nitride Nanocrystals with a Silicon Oxynitride Shell: Implications for Refractory Optical Materials

2020 ◽  
Vol 3 (5) ◽  
pp. 4504-4511
Author(s):  
Carla Berrospe Rodriguez ◽  
Alejandro Alvarez Barragan ◽  
Giorgio Nava ◽  
Stephen Exarhos ◽  
Lorenzo Mangolini
2017 ◽  
Vol 5 (7) ◽  
Author(s):  
Urcan Guler ◽  
Dmitry Zemlyanov ◽  
Jongbum Kim ◽  
Zhuoxian Wang ◽  
Rohith Chandrasekar ◽  
...  

2017 ◽  
Vol 5 (22) ◽  
Author(s):  
Manohar Chirumamilla ◽  
Anisha Chirumamilla ◽  
Yuanqing Yang ◽  
Alexander S. Roberts ◽  
Peter Kjaer Kristensen ◽  
...  

Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.


1989 ◽  
Vol 50 (C7) ◽  
pp. C7-169-C7-173
Author(s):  
R.C BUSCHERT ◽  
P. N. GIBSON ◽  
W. GISSLER ◽  
J. HAUPT ◽  
T. A. CRABB
Keyword(s):  

1980 ◽  
Vol 41 (5) ◽  
pp. 558-566
Author(s):  
O. Yu Elagina ◽  
◽  
D.O. Kolbas ◽  
A.G. Buklakov ◽  
N. Derr ◽  
...  

1993 ◽  
Vol 329 ◽  
Author(s):  
Vivien D.

AbstractIn this paper the relationships between the crystal structure, chemical composition and electronic structure of laser materials, and their optical properties are discussed. A brief description is given of the different laser activators and of the influence of the matrix on laser characteristics in terms of crystal field strength, symmetry, covalency and phonon frequencies. The last part of the paper lays emphasis on the means to optimize the matrix-activator properties such as control of the oxidation state and site occupancy of the activator and influence of its concentration.


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