Synthesis of Cyclopentadithiophene–Diketopyrrolopyrrole Donor–Acceptor Copolymers for High-Performance Nonvolatile Floating-Gate Memory Transistors with Long Retention Time

2019 ◽  
Vol 12 (2) ◽  
pp. 2743-2752 ◽  
Author(s):  
Soyeon Jeon ◽  
Cheng Sun ◽  
Seong Hoon Yu ◽  
Soon-Ki Kwon ◽  
Dae Sung Chung ◽  
...  
Keyword(s):  
Retention Time ◽  
High Performance ◽  
Floating Gate ◽  
Floating Gate Memory ◽  
Donor Acceptor

High-Performance Flexible Organic Nano-Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles

Small ◽  
2015 ◽  
Vol 11 (37) ◽  
pp. 4976-4984 ◽  
Author(s):  
Ji Hyung Jung ◽  
Sunghwan Kim ◽  
Hyeonjung Kim ◽  
Jongnam Park ◽  
Joon Hak Oh
Keyword(s):  
High Performance ◽  
Cobalt Ferrite ◽  
Ferrite Nanoparticles ◽  
Floating Gate ◽  
Memory Devices ◽  
Cobalt Ferrite Nanoparticles ◽  
Floating Gate Memory

scholarly journals High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1101
Author(s):  
Muhammad Naqi ◽  
Nayoung Kwon ◽  
Sung Hyeon Jung ◽  
Pavan Pujar ◽  
Hae Won Cho ◽  
...  
Keyword(s):  
Retention Time ◽  
Photoelectron Spectroscopy ◽  
Flash Memory ◽  
High Performance ◽  
Memory Window ◽  
Floating Gate ◽  
Semiconductor Layer ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Gate Layer

Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-gate TFT-type NVM device using indium gallium zinc oxide (IGZO) semiconductor with monolayer gold nanoparticles (AuNPs) as a floating gate layer to obtain reliable memory operations. The proposed NVM device exhibits a high memory window (ΔVth) of 13.7 V when it sweeps from −20 V to +20 V back and forth. Additionally, the material characteristics of the monolayer AuNPs (floating gate layer) and IGZO film (semiconductor layer) are confirmed using transmission electronic microscopy (TEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) techniques. The memory operations in terms of endurance and retention are obtained, revealing highly stable endurance properties of the device up to 100 P/E cycles by applying pulses (±20 V, duration of 100 ms) and reliable retention time up to 104 s. The proposed NVM device, owing to the properties of large memory window, stable endurance, and high retention time, enables an excellent approach in futuristic non-volatile memory technology.

Multilayer Ge nanocrystals embedded within Al2O3 matrix for high performance floating gate memory devices

2015 ◽  
Vol 107 (9) ◽  
pp. 093102 ◽  
Author(s):  
R. Bar ◽  
R. Aluguri ◽  
S. Manna ◽  
A. Ghosh ◽  
P. V. Satyam ◽  
...  
Keyword(s):  
High Performance ◽  
Floating Gate ◽  
Memory Devices ◽  
Floating Gate Memory ◽  
Ge Nanocrystals ◽  
Al2o3 Matrix

High-Performance Mixed-Signal Neurocomputing With Nanoscale Floating-Gate Memory Cell Arrays

2018 ◽  
Vol 29 (10) ◽  
pp. 4782-4790 ◽  
Author(s):  
Farnood Merrikh-Bayat ◽  
Xinjie Guo ◽  
Michael Klachko ◽  
Mirko Prezioso ◽  
Konstantin K. Likharev ◽  
...  
Keyword(s):  
High Performance ◽  
Memory Cell ◽  
Floating Gate ◽  
Mixed Signal ◽  
Floating Gate Memory ◽  
Cell Arrays

Enhancement of Nonvolatile Floating Gate Memory Devices Containing AgInSbTe-SiO2 Nanocomposite by Inserting HfO2/SiO2 Blocking Oxide Layer

2011 ◽  
Vol 1337 ◽  
Author(s):  
Kuo-Chang Chiang ◽  
Tsung-Eong Hsieh
Keyword(s):  
Oxide Layer ◽  
Retention Time ◽  
Gate Voltage ◽  
Charge Trapping ◽  
Floating Gate ◽  
Voltage Sweep ◽  
Current Voltage ◽  
Charge Loss ◽  
Floating Gate Memory ◽  
Time Test

ABSTRACTThis work presents an enhancement of nonvolatile floating gate memory (NFGM) devices comprised of AgInSbTe (AIST) nanocomposite as the charge-storage trap layer and HfO2 or HfO2/SiO2 as the blocking oxide layer. A significantly large memory window (ΔVFB) shift = 30.7 V and storage charge density = 2.3×1013 cm−2 at ±23V gate voltage sweep were achieved in HfO2/SiO2/AIST sample. Retention time analysis observed a ΔVFB shift about 19.3 V and the charge loss about 13.4% in such a sample under the ±15V gate voltage stress after 104 sec retention time test. Regardless of applied bias direction, the sample containing HfO2/SiO2 layer exhibited the leakage current density as low as 150 nA/cm2 as revealed by the current-voltage (I-V) measurement. This effectively suppresses the electron injection between gate electrode and charge trapping layer and leads to a substantial enhancement of NFGM characteristics.

Bioanalytical method development and validation of simultaneous analysis of telmisartan and hydrochlorthiazide in human plasma using LC-MS/MS

2016 ◽  
Vol 5 (03) ◽  
pp. 4862 ◽  
Author(s):  
Mathew George* ◽  
Lincy Joseph ◽  
Arpit Kumar Jain ◽  
Anju V.
Keyword(s):  
Human Plasma ◽  
Retention Time ◽  
High Performance ◽  
Method Development ◽  
Matrix Effects ◽  
Solid Phase ◽  
Internal Standard ◽  
Assay Method ◽  
Buffer System ◽  
Internal Standards

A simple, sensitive, rapid and economic high performance thin layer chromatographic method and a mass spectroscopic assay method has been developed for the quantification of telmisartan and hydrochlorthiazide combination in human plasma. The internal standards and analytes were extracted from human plasma by solid-phase extraction with HLB Oasis1cc (30mg) catridges. The scanning and optimization for the samples are done using methanol: water (50:50). The samples were chromatographed using reverse phase chromatography with C-18 column of different manufacturers like Ascentis C18 (150×4. 6, 5µ) using the buffer system Acetonitrile: Buffer (80:20%v/v) which consist of 2±0. 1Mm ammonium format at a flow rate of 0. 7ml/min at a column oven temperature 35±10c. The internal standard used was hydrochlorthiazide13c1, d2 and telmisartand3. The extraction techniques include conditioning, loading, washing and elution, drying followed by reconstitution of the dried samples. The volume injected was 10µl with the retention time of 3-4 min for telmisartan, 1-2 min for hydrochlorthiazide and for the internal standards the retention time was 3-4 min for telmisartand3 and 1-2 min for hydrochlorthiazide c13d2. The rinsing solution was Acetonitrile: HPLC grade water in the ratio (50:50). The above developed method was validated using various parameters like selectivity and sensitivity, accuracy and precision, matrix effects, % recovery and various stability studies. The method was proved to be sensitive, accurate, precise and reproducible. The preparation showed high recovery for the quantitative determination of telmisartan and hydrochlorthiazide in human plasma.

Floating Gate Memory Based on Ferritin Nanodots with High-kGate Dielectrics

2009 ◽  
Vol 48 (4) ◽  
pp. 04C153 ◽  
Author(s):  
Kosuke Ohara ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Ichiro Yamashita ◽  
Toshitake Yaegashi ◽  
...  
Keyword(s):  
Floating Gate ◽  
Floating Gate Memory

scholarly journals Single-Poly Floating-Gate Memory Cell Options for Analog Neural Networks

2021 ◽  
pp. 108062
Author(s):  
Maksym Paliy ◽  
Tommaso Rizzo ◽  
Piero Ruiu ◽  
Sebastiano Strangio ◽  
Giuseppe Iannaccone
Keyword(s):  
Neural Networks ◽  
Memory Cell ◽  
Floating Gate ◽  
Floating Gate Memory ◽  
Analog Neural Networks
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