Energy-Efficient Artificial Synapses Based on Oxide Tunnel Junctions

2019 ◽  
Vol 11 (46) ◽  
pp. 43473-43479 ◽  
Author(s):  
Jiankun Li ◽  
Chen Ge ◽  
Haotian Lu ◽  
Haizhong Guo ◽  
Er-Jia Guo ◽  
...  
Keyword(s):  
Energy Efficient ◽  
Tunnel Junctions ◽  
Oxide Tunnel

Magnetic tunnel junctions with Hf oxide and modified Hf oxide tunnel barriers

2003 ◽  
Vol 93 (10) ◽  
pp. 6423-6425 ◽  
Author(s):  
B. G. Park ◽  
T. D. Lee ◽  
T. H. Lee ◽  
C. G. Kim ◽  
C. O. Kim
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barriers ◽  
Oxide Tunnel

scholarly journals Full voltage manipulation of the resistance of a magnetic tunnel junction

2019 ◽  
Vol 5 (12) ◽  
pp. eaay5141 ◽  
Author(s):  
Aitian Chen ◽  
Yuelei Zhao ◽  
Yan Wen ◽  
Long Pan ◽  
Peisen Li ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Energy Efficient ◽  
Room Temperature ◽  
Efficient Solution ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Spintronic Devices ◽  
Electrical Control

One of the motivations for multiferroics research is to find an energy-efficient solution to spintronic applications, such as the solely electrical control of magnetic tunnel junctions. Here, we integrate spintronics and multiferroics by depositing MgO-based magnetic tunnel junctions on ferroelectric substrate. We fabricate two pairs of electrodes on the ferroelectric substrate to generate localized strain by applying voltage. This voltage-generated localized strain has the ability to modify the magnetic anisotropy of the free layer effectively. By sequentially applying voltages to these two pairs of electrodes, we successively and unidirectionally rotate the magnetization of the free layer in the magnetic tunnel junctions to complete reversible 180° magnetization switching. Thus, we accomplish a giant nonvolatile solely electrical switchable high/low resistance in magnetic tunnel junctions at room temperature without the aid of a magnetic field. Our results are important for exploring voltage control of magnetism and low-power spintronic devices.

scholarly journals Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined through Electric Polarization Control of the Interface

2015 ◽  
Vol 5 (4) ◽  
Author(s):  
Hisashi Inoue ◽  
Adrian G. Swartz ◽  
Nicholas J. Harmon ◽  
Takashi Tachikawa ◽  
Yasuyuki Hikita ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Electric Polarization ◽  
Polarization Control ◽  
Oxide Tunnel

Observation of inverse magnetoresistance in perovskite oxide tunnel junctions

2004 ◽  
Vol 241 (7) ◽  
pp. 1490-1493 ◽  
Author(s):  
J. S. Noh ◽  
C. B. Eom ◽  
M. G. Lagally ◽  
J. Z. Sun ◽  
H. C. Kim
Keyword(s):  
Tunnel Junctions ◽  
Perovskite Oxide ◽  
Oxide Tunnel
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