Investigation of the Capacitance–Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment

2019 ◽  
Vol 11 (43) ◽  
pp. 40196-40203 ◽  
Author(s):  
Hong-Chih Chen ◽  
Chuan-Wei Kuo ◽  
Ting-Chang Chang ◽  
Wei-Chih Lai ◽  
Po-Hsun Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hydrogen Diffusion ◽  
Negative Bias ◽  
Electrical Characteristics ◽  
Bias Stress ◽  
Capacitance Voltage ◽  
Moist Environment

H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress

2017 ◽  
Vol 111 (7) ◽  
pp. 073506 ◽  
Author(s):  
Jianwen Yang ◽  
Po-Yung Liao ◽  
Ting-Chang Chang ◽  
Hsiao-Cheng Chiang ◽  
Bo-Wei Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress

Stability of zinc nitride thin-film transistors under positive and negative bias stress

2020 ◽  
Vol 171 ◽  
pp. 107841
Author(s):  
Miguel A. Dominguez ◽  
Jose Luis Pau ◽  
Andrés Redondo-Cubero
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress ◽  
Zinc Nitride

Abnormal Negative Bias Stress Instability of Amorphous InGaZnO Thin Film Transistors

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1918-1918
Author(s):  
Chia-Chun Yen ◽  
Chieh Lo ◽  
Yu-Chieh Liu ◽  
Chun-Hung Yeh ◽  
Cheewee Liu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress ◽  
Amorphous Ingazno

Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors Under Negative Bias Stress

2017 ◽  
Vol 38 (5) ◽  
pp. 592-595 ◽  
Author(s):  
Jianwen Yang ◽  
Po-Yung Liao ◽  
Ting-Chang Chang ◽  
Bo-Wei Chen ◽  
Hui-Chun Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress

scholarly journals Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Membranes ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 29
Author(s):  
Honglong Ning ◽  
Xuan Zeng ◽  
Hongke Zhang ◽  
Xu Zhang ◽  
Rihui Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Good Stability ◽  
Negative Bias ◽  
Bending Stress ◽  
Excellent Performance ◽  
Flexible Display ◽  
Bias Stress ◽  
Device Applications

Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 × 106, a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

scholarly journals Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1186
Author(s):  
Soo Cheol Kang ◽  
So Young Kim ◽  
Sang Kyung Lee ◽  
Kiyung Kim ◽  
Billal Allouche ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxygen Vacancies ◽  
Drain Current ◽  
Vacuum Treatment ◽  
Trap Level ◽  
Zno Thin Film ◽  
Electrical Characteristics ◽  
Bias Stress ◽  
Trap Assisted Tunneling

The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain current (ID) via trap-assisted tunneling when the gate voltage (VG) is lower than the specific voltage associated with the trap level. The oxygen vacancies were successfully passivated after the annealing of ZnO in oxygen ambient. We determined that the trap-induced Schottky barrier lowering reduced a drain barrier when the drain was subjected to negative bias stress. Consequentially, the field effect mobility increased from 8.5 m2 V−1·s−1 to 8.9 m2 V−1·s−1 and on-current increased by ~13%.

scholarly journals Electrical Characteristics and Stability Improvement of Top-Gate In-Ga-Zn-O Thin-Film Transistors with Al2O3/TEOS Oxide Gate Dielectrics

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1146
Author(s):  
Yih-Shing Lee ◽  
Yu-Hsin Wang ◽  
Tsung-Cheng Tien ◽  
Tsung-Eong Hsieh ◽  
Chun-Hung Lai
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Single Layer ◽  
Charge Trapping ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Electrical Stability ◽  
Bias Stress

In this work, two stacked gate dielectrics of Al2O3/tetraethyl-orthosilicate (TEOS) oxide were deposited by using the equivalent capacitance with 100-nm thick TEOS oxide on the patterned InGaZnO layers to evaluate the electrical characteristics and stability improvement of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) devices, including positive bias stress (PBS) and negative bias stress (NBS) tests. Three different kinds of gate dielectrics (Al2O3, TEOS, Al2O3/TEOS) were used to fabricate four types of devices, differing by the gate dielectric, as well as its thickness. As the Al2O3 thickness of Al2O3/TEOS oxide dielectric stacks increased, both the on-current and off-current decreased, and the transfer curves shifted to larger voltages. The lowest ∆Vth of 0.68 V and ∆S.S. of −0.03 V/decade from hysteresis characteristics indicate that the increase of interface traps and charge trapping between the IGZO channel and gate dielectrics is effectively inhibited by using two stacked dielectrics with 10-nm thick Al2O3 and 96-nm thick TEOS oxide. The lowest ∆Vth and ∆S.S. values of a-IGZO TFTs with 10-nm thick Al2O3 and 96-nm thick TEOS oxide gate dielectrics according to the PBS and NBS tests were shown to have the best electrical stability in comparison to those with the Al2O3 or TEOS oxide single-layer dielectrics.

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