Polymer-Assisted Deposition of Gallium Oxide for Thin-Film Transistor Applications

2019 ◽  
Vol 11 (32) ◽  
pp. 29078-29085 ◽  
Author(s):  
Lin Chen ◽  
Wangying Xu ◽  
Wenjun Liu ◽  
Shun Han ◽  
Peijiang Cao ◽  
...  
RSC Advances ◽  
2020 ◽  
Vol 10 (17) ◽  
pp. 9902-9906 ◽  
Author(s):  
Kuan-Yu Chen ◽  
Chih-Chiang Yang ◽  
Chun-Yuan Huang ◽  
Yan-Kuin Su

The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method.


Author(s):  
Diki Purnawati ◽  
Juan Paolo S. Bermundo ◽  
Yukiharu Uraoka

Abstract Developing semiconducting solution-processed ultra-wide bandgap (UWB) amorphous oxide semiconductor (AOS) is an emerging area of research interest. However, obtaining electrical conduction on it is quite challenging. Here, we demonstrate the insulator-to-semiconductor conversion of solution-processed a-Ga2Ox (Eg~4.8 eV) through hydrogen annealing. The successful conversion was reflected by the switching thin-film transistor (TFT) with μsat of 10-2 cm2/Vs. We showed that H incorporated after hydrogen annealing acts as a shallow donor which increased the carrier concentration and shifted the EF closer to the CBM.


2019 ◽  
Vol 8 (7) ◽  
pp. Q3140-Q3143 ◽  
Author(s):  
Wei-Lun Huang ◽  
Ming-Hung Hsu ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang ◽  
Yu-Zung Chiou

2020 ◽  
Vol 59 (12) ◽  
pp. 126503
Author(s):  
Tsung-Kuei Kang ◽  
Che-Fu Hsu ◽  
Han-Wen Liu ◽  
Feng-Tso Chien ◽  
Cheng-Li Lin

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