Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films

2019 ◽  
Vol 11 (28) ◽  
pp. 25605-25612 ◽  
Author(s):  
Qiang Gao ◽  
Kaifeng Li ◽  
Li Zhao ◽  
Kaiyin Zhang ◽  
Hong Li ◽  
...  
2006 ◽  
Vol 100 (11) ◽  
pp. 113713 ◽  
Author(s):  
S. Jiménez-Sandoval ◽  
G. E. Garnett-Ruiz ◽  
J. Santos-Cruz ◽  
O. Jiménez-Sandoval ◽  
G. Torres-Delgado ◽  
...  

1993 ◽  
Vol 63 (24) ◽  
pp. 3335-3337 ◽  
Author(s):  
Kazuhiko Yanagawa ◽  
Yoshimichi Ohki ◽  
Naoyuki Ueda ◽  
Takahisa Omata ◽  
Takuya Hashimoto ◽  
...  

1994 ◽  
Vol 33 (Part 2, No. 2B) ◽  
pp. L238-L240 ◽  
Author(s):  
Kazuhiko Yanagawa ◽  
Yoshimichi Ohki ◽  
Takahisa Omata ◽  
Hideo Hosono ◽  
Naoyuki Ueda ◽  
...  

1992 ◽  
Vol 258 ◽  
Author(s):  
T. Sameshima ◽  
S. Usui

ABSTRACTPulsed laser-induced melting followed by crystallization and amorphization were studied on silicon-germanium alloy (SiGe) films. Although amorphization was achieved on SiGe films, it was not observed in pure Ge films. Crystalline nucleation density in homogeneous solidification increased as Ge concentration increased. It was 1×1024m-3for Si0.22Ge0.78 films, while it was 4×1022m-3 for pUre si films. Electrical conductivity of laser polycrystallized films increased as Ge concentration increased. It had a maximum of 1 S/cm when Ge concentration was 0.78. This high electrical conductivity would be brought about by the increase of carrier mobility as well as the reduction of the band gap.


2021 ◽  
Author(s):  
Ken Aldren Aldren Usman ◽  
Si Qin ◽  
Luke C Henderson ◽  
Jizhen Zhang ◽  
Dylan Hegh ◽  
...  

The exciting combination of high electrical conductivity, high specific capacitance and colloidal stability of two-dimensional Ti3C2Tx MXene (referred to as MXene) has shown great potential in a wide range of...


2006 ◽  
Vol 89 (3) ◽  
pp. 032111 ◽  
Author(s):  
Kenji Sugiura ◽  
Hiromichi Ohta ◽  
Kenji Nomura ◽  
Masahiro Hirano ◽  
Hideo Hosono ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (17) ◽  
pp. 13914-13919 ◽  
Author(s):  
Tianqi Li ◽  
Jiabin Wu ◽  
Xu Xiao ◽  
Bingyan Zhang ◽  
Zhimi Hu ◽  
...  

Band gap engineering was achieved by in situ doping method for high electrical conductivity and chemical activity of MnO2.


2018 ◽  
Author(s):  
Sherif Tawfik ◽  
Olexandr Isayev ◽  
Catherine Stampfl ◽  
Joseph Shapter ◽  
David Winkler ◽  
...  

Materials constructed from different van der Waals two-dimensional (2D) heterostructures offer a wide range of benefits, but these systems have been little studied because of their experimental and computational complextiy, and because of the very large number of possible combinations of 2D building blocks. The simulation of the interface between two different 2D materials is computationally challenging due to the lattice mismatch problem, which sometimes necessitates the creation of very large simulation cells for performing density-functional theory (DFT) calculations. Here we use a combination of DFT, linear regression and machine learning techniques in order to rapidly determine the interlayer distance between two different 2D heterostructures that are stacked in a bilayer heterostructure, as well as the band gap of the bilayer. Our work provides an excellent proof of concept by quickly and accurately predicting a structural property (the interlayer distance) and an electronic property (the band gap) for a large number of hybrid 2D materials. This work paves the way for rapid computational screening of the vast parameter space of van der Waals heterostructures to identify new hybrid materials with useful and interesting properties.


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