Si–MoS2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power

2019 ◽  
Vol 11 (7) ◽  
pp. 7626-7634 ◽  
Author(s):  
Gwang Hyuk Shin ◽  
Junghoon Park ◽  
Khang June Lee ◽  
Geon-Beom Lee ◽  
Hyun Bae Jeon ◽  
...  
2017 ◽  
Vol 9 (41) ◽  
pp. 36130-36136 ◽  
Author(s):  
Li Huang ◽  
Wee Chong Tan ◽  
Lin Wang ◽  
Bowei Dong ◽  
Chengkuo Lee ◽  
...  

Author(s):  
Jaroslaw Kirdoda ◽  
Ross William Millar ◽  
Fiona Thorburn ◽  
Laura L. Huddleston ◽  
Derek C. S. Dumas ◽  
...  

2009 ◽  
Vol 105 (2) ◽  
pp. 024513 ◽  
Author(s):  
Guillaume Pedroza ◽  
Olivier Gilard ◽  
Marie-Lise Bourqui ◽  
Laurent Bechou ◽  
Yannick Deshayes ◽  
...  

1976 ◽  
Vol 16 (3) ◽  
pp. 425-428 ◽  
Author(s):  
B.T. Draine ◽  
A.J. Sievers

Author(s):  
M. D. Goldflam ◽  
S. D. Hawkins ◽  
S. Parameswaran ◽  
A. Tauke-Pedretti ◽  
L. K. Warne ◽  
...  

2002 ◽  
Vol 12 (02) ◽  
pp. 531-540 ◽  
Author(s):  
M. NURUL ABEDIN ◽  
TAMER F. REFAAT ◽  
UPENDRA N. SINGH

Noise of a photodetector plays a vital role in determining the minimum detectable signal for lidar and DIAL receivers. A low noise trans-impedance amplifier circuit has been employed to examine the noise of III-V compound infrared detectors. These infrared detectors include InGaAs PIN diodes and newly developed InGaAsSb avalanche photodiodes (APDs) with separate absorption and multiplication (SAM) structure. The noise of these detectors are compared with well-established Si APDs. These measured noises are utilized to compute the figures-of-merit, such as noise-equivalent-power (NEP) and detectivity (D*) of these devices and are presented in this paper.


2011 ◽  
Vol 9 (2) ◽  
pp. 310-313 ◽  
Author(s):  
Pin Jern Ker ◽  
Andrew R. J. Marshall ◽  
John P. R. David ◽  
Chee Hing Tan

Author(s):  
Ross W. Millar ◽  
Jaroslaw Kirdoda ◽  
Fiona Thorburn ◽  
Laura L. Huddleston ◽  
Derek C. S. Dumas ◽  
...  

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