Polymer-Assisted In Situ Growth of All-Inorganic Perovskite Nanocrystal Film for Efficient and Stable Pure-Red Light-Emitting Devices

2018 ◽  
Vol 10 (49) ◽  
pp. 42564-42572 ◽  
Author(s):  
Wanqing Cai ◽  
Ziming Chen ◽  
Zhenchao Li ◽  
Lei Yan ◽  
Donglian Zhang ◽  
...  
Keyword(s):  
Red Light ◽  
In Situ Growth ◽  
Light Emitting ◽  
Inorganic Perovskite ◽  
Light Emitting Devices

In Situ Ligand Bonding Management of CsPbI 3 Perovskite Quantum Dots Enables High‐Performance Photovoltaics and Red Light‐Emitting Diodes

2020 ◽  
Vol 59 (49) ◽  
pp. 22230-22237 ◽  
Author(s):  
Junwei Shi ◽  
Fangchao Li ◽  
Yan Jin ◽  
Cheng Liu ◽  
Ben Cohen‐Kleinstein ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Light Emitting ◽  
Perovskite Quantum Dots

In Situ Inkjet Printing of the Perovskite Single-Crystal Array-Embedded Polydimethylsiloxane Film for Wearable Light-Emitting Devices

2020 ◽  
Vol 12 (19) ◽  
pp. 22157-22162 ◽  
Author(s):  
Zhenkun Gu ◽  
Zhandong Huang ◽  
Xiaotian Hu ◽  
Ying Wang ◽  
Lihong Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
Inkjet Printing ◽  
Light Emitting ◽  
Light Emitting Devices

scholarly journals In situ synthesis of stretchable and highly stable multi-color carbon-dots/polyurethane composite films for light-emitting devices

RSC Advances ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 1281-1286 ◽  
Author(s):  
Fei Lian ◽  
Chuanxi Wang ◽  
Qian Wu ◽  
Minghui Yang ◽  
Zhenyu Wang ◽  
...  
Keyword(s):  
Polymer Films ◽  
Carbon Dots ◽  
Composite Films ◽  
Optoelectronic Devices ◽  
In Situ Synthesis ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Polyurethane Composite

Stretchable, mechanically stable multi-color carbon-dots-based polymer films are in situ fabricated, and showed potential for application in optoelectronic devices.

Heteroepitaxy of GaN on Silicon: In Situ Measurements

2005 ◽  
Vol 483-485 ◽  
pp. 1051-1056
Author(s):  
A. Krost ◽  
Armin Dadgar ◽  
F. Schulze ◽  
R. Clos ◽  
K. Haberland ◽  
...  
Keyword(s):  
Low Cost ◽  
Group Iii Nitrides ◽  
In Situ Monitoring ◽  
Attractive Alternative ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Thermal Expansion Coefficients ◽  
Long Time

Due to the lack of GaN wafers, so far, group-III nitrides are mostly grown on sapphire or SiC substrates. Silicon offers an attractive alternative because of its low cost, large wafer area, and physical benefits such as the possibility of chemical etching, lower hardness, good thermal conductivity, and electrical conducting or isolating for light emitting devices or transistor structures, respectively. However, for a long time, a technological breakthrough of GaN-on-silicon has been thought to be impossible because of the cracking problem originating in the huge difference of the thermal expansion coefficients between GaN and silicon which leads to tensile strain and cracking of the layers when cooling down. However, in recent years, several approaches to prevent cracking and wafer bowing have been successfully applied. Nowadays, device-relevant thicknesses of crackfree group-III-nitrides can be grown on silicon. To reach this goal the most important issues were the identification of the physical origin of strains and its engineering by means of in situ monitoring during metalorganic vapor phase epitaxy.

CsPbBr3 interconnected microwire structure: temperature-related photoluminescence properties and its lasing action

2019 ◽  
Vol 7 (34) ◽  
pp. 10454-10459 ◽  
Author(s):  
Canran Zhang ◽  
Junjie Duan ◽  
Feifei Qin ◽  
Chunxiang Xu ◽  
Wei Wang ◽  
...  
Keyword(s):  
Promising Material ◽  
Next Generation ◽  
Photoluminescence Properties ◽  
Light Emitting ◽  
Inorganic Perovskite ◽  
Light Emitting Devices ◽  
Wavelength Light

Inorganic perovskite CsPbBr3 is a promising material for the next generation green-wavelength light-emitting devices.

Investigations on the Aluminum/Para-Hexaphenyl Interface in Light Emitting Devices

1997 ◽  
Vol 488 ◽  
Author(s):  
N. Koch ◽  
L.-M. Yu ◽  
J.-L. Guyaux ◽  
Y. Morciaux ◽  
G. Leising ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Active Material ◽  
Direct Interaction ◽  
Metal Electrode ◽  
Insulating Layer ◽  
Aluminum Films ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Thin Aluminum

AbstractBlue light emitting devices (LED) with para-hexaphenyl (PHP) as the active material and aluminum as cathode exhibit very high quantum efficiencies. To further optimize device performance it is crucial to understand the physical properties of the involved interfaces. We have performed Rutherford-Backscattering experiments on actual devices to show the importance of oxygen in the interface formation at the cathode as this leads to the formation of a layer of AlxOy between PHP and aluminum. In devices, where the organic film is exposed to air before the metal electrode is evaporated, an insulating layer on the metal-side therefore is inherent. It has been shown that the introduction of an intermediate layer between active material and electrodes results in a higher quantum efficiency of the LED, the most common concepts being charge-transport-layers, or insulators on the other hand. Our results underline the need for a better control of the LED processing. Ultraviolet- and X-ray photoelectron spectroscopy in situ growth studies of thin aluminum films on PHP have been made to reveal the change in the electronic structure of the active medium in a LED in the absence of oxygen. Also the direct interaction of oxygen with this organic material is investigated by photoelectron spectroscopy.

scholarly journals White Light-Emitting Devices Based on Inorganic Perovskite and Organic Materials

Molecules ◽  
2019 ◽  
Vol 24 (4) ◽  
pp. 800 ◽  
Author(s):  
Shuming Chen ◽  
Chen Chen ◽  
Cong Bao ◽  
Muhammad Mujahid ◽  
Ye Li ◽  
...  
Keyword(s):  
White Light ◽  
Polymer Composite Material ◽  
Maximum Luminance ◽  
Light Emitting ◽  
Inorganic Perovskite ◽  
Light Emitting Devices ◽  
Hole Transporting ◽  
One Step ◽  
The One ◽  
Further Development

Perovskite-based materials have attracted considerable attention in photoelectric devices. In this paper, we report the one-step fabrication of spin-coated CsPbBr2.5I0.5 perovskite films doped with PAN (polyacrylonitrile) polymer. A red perovskite LED (PeLED) composite film was fabricated which featured a maximum luminance value of 657 cd/m2 at 8 V. We fabricated white PeLEDs by combining hole transporting layer material emission, perovskite–polymer composite material PAN:CsPbBr2.5I0.5, and pure inorganic perovskite CsPbBr3 as a luminescent layer. The maximum luminance of the device was 360 cd/m2 at 7 V, and the color coordinate was (0.31, 0.36). We obtained an ideal white light-emitting device that paves the way for further development of white PeLEDs.

Driving and Application of Blue Light Organic Light Emitting Devices

2019 ◽  
Vol 11 (5) ◽  
pp. 711-717
Author(s):  
Hongbo Liu ◽  
Minghui Liu ◽  
Lin Cong ◽  
Lizhong Wang ◽  
Tao Huang ◽  
...  
Keyword(s):  
Blue Light ◽  
High Efficiency ◽  
Low Voltage ◽  
Red Light ◽  
Portable Devices ◽  
Driving Voltage ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices

The DPVBi (4,4′-bis(2,2-diphenylvinyl-1,1′-biphenyl) is a blue-light organic fluorescence doped material, which can be used as a hole barrier layer or a luminescent layer for fabricating organic light-emitting devices. A blue light device with stable color stability and high efficiency was prepared by co-doping blue light dye DPVBi and red light dye DCJTB as light-emitting layer. In order to prevent the infiltration of O2 and moisture inside the device from affecting the luminescence lifetime of the device, the device was encapsulated by atomic layer deposition. Since the driving voltage of the organic light-emitting device is generally above 5 V and the power consumption is low, in order to facilitate driving with a low voltage, a boost driving circuit based on the XL6009 chip was designed. The driver of the fabricated blue-light device was tested. The results showed that circuit had low-voltage drive characteristics and could be widely used in small toys, lighting, and portable devices. Through the test to achieve the desired goal, the requirements of low voltage and low energy consumption were realized, and the life of the light-emitting device can be tested, which has certain practicability and reference value.

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