scholarly journals Electrophosphorescence: Very High Efficiency Orange-Red Light-Emitting Devices with Low Roll-Off at High Luminance Based on an Ideal Host-Guest System Consisting of Two Novel Phosphorescent Iridium Complexes with Bipolar Transport (Adv. Funct. Mater. 47/2

2014 ◽  
Vol 24 (47) ◽  
pp. 7560-7560
Author(s):  
Guomeng Li ◽  
Dongxia Zhu ◽  
Tai Peng ◽  
Yu Liu ◽  
Yue Wang ◽  
...  
2019 ◽  
Vol 7 (9) ◽  
pp. 2686-2698 ◽  
Author(s):  
Yuqin Li ◽  
Siming Gao ◽  
Nan Zhang ◽  
Xin Huang ◽  
Jinchang Tian ◽  
...  

The optimal device E exhibited a very high luminance of 10 407 cd m−2 and a maximum current efficiency of 7.80 cd A−1.


2019 ◽  
Vol 11 (5) ◽  
pp. 711-717
Author(s):  
Hongbo Liu ◽  
Minghui Liu ◽  
Lin Cong ◽  
Lizhong Wang ◽  
Tao Huang ◽  
...  

The DPVBi (4,4′-bis(2,2-diphenylvinyl-1,1′-biphenyl) is a blue-light organic fluorescence doped material, which can be used as a hole barrier layer or a luminescent layer for fabricating organic light-emitting devices. A blue light device with stable color stability and high efficiency was prepared by co-doping blue light dye DPVBi and red light dye DCJTB as light-emitting layer. In order to prevent the infiltration of O2 and moisture inside the device from affecting the luminescence lifetime of the device, the device was encapsulated by atomic layer deposition. Since the driving voltage of the organic light-emitting device is generally above 5 V and the power consumption is low, in order to facilitate driving with a low voltage, a boost driving circuit based on the XL6009 chip was designed. The driver of the fabricated blue-light device was tested. The results showed that circuit had low-voltage drive characteristics and could be widely used in small toys, lighting, and portable devices. Through the test to achieve the desired goal, the requirements of low voltage and low energy consumption were realized, and the life of the light-emitting device can be tested, which has certain practicability and reference value.


1999 ◽  
Vol 75 (1) ◽  
pp. 4-6 ◽  
Author(s):  
M. A. Baldo ◽  
S. Lamansky ◽  
P. E. Burrows ◽  
M. E. Thompson ◽  
S. R. Forrest

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Chang Yi ◽  
Chao Liu ◽  
Kaichuan Wen ◽  
Xiao-Ke Liu ◽  
Hao Zhang ◽  
...  

Abstract Black phase CsPbI3 is attractive for optoelectronic devices, while usually it has a high formation energy and requires an annealing temperature of above 300 °C. The formation energy can be significantly reduced by adding HI in the precursor. However, the resulting films are not suitable for light-emitting applications due to the high trap densities and low photoluminescence quantum efficiencies, and the low temperature formation mechanism is not well understood yet. Here, we demonstrate a general approach for deposition of γ-CsPbI3 films at 100 °C with high photoluminescence quantum efficiencies by adding organic ammonium cations, and the resulting light-emitting diode exhibits an external quantum efficiency of 10.4% with suppressed efficiency roll-off. We reveal that the low-temperature crystallization process is due to the formation of low-dimensional intermediate states, and followed by interionic exchange. This work provides perspectives to tune phase transition pathway at low temperature for CsPbI3 device applications.


2008 ◽  
Vol 93 (13) ◽  
pp. 133309 ◽  
Author(s):  
Sang-Hyun Eom ◽  
Ying Zheng ◽  
Neetu Chopra ◽  
Jaewon Lee ◽  
Franky So ◽  
...  

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