Intergrain Diffusion of Carbon Radical for Wafer-Scale, Direct Growth of Graphene on Silicon-Based Dielectrics

2018 ◽  
Vol 10 (31) ◽  
pp. 26517-26525 ◽  
Author(s):  
Phong Nguyen ◽  
Sanjay K. Behura ◽  
Michael R. Seacrist ◽  
Vikas Berry
ACS Nano ◽  
2020 ◽  
Vol 14 (3) ◽  
pp. 3290-3298
Author(s):  
M. M. Juvaid ◽  
Soumya Sarkar ◽  
Pranjal Kumar Gogoi ◽  
Siddhartha Ghosh ◽  
Meenakshi Annamalai ◽  
...  

2016 ◽  
Vol 365 ◽  
pp. 160-165 ◽  
Author(s):  
Yujin Jang ◽  
Seungmin Yeo ◽  
Han-Bo-Ram Lee ◽  
Hyungjun Kim ◽  
Soo-Hyun Kim

ACS Nano ◽  
2014 ◽  
Vol 8 (11) ◽  
pp. 11181-11190 ◽  
Author(s):  
Marco Abbarchi ◽  
Meher Naffouti ◽  
Benjamin Vial ◽  
Abdelmalek Benkouider ◽  
Laurent Lermusiaux ◽  
...  

2021 ◽  
Vol 7 (47) ◽  
Author(s):  
Zhaolong Chen ◽  
Chunyu Xie ◽  
Wendong Wang ◽  
Jinpei Zhao ◽  
Bingyao Liu ◽  
...  
Keyword(s):  

2007 ◽  
Vol 136 (1) ◽  
pp. 125-131 ◽  
Author(s):  
Bongsang Kim ◽  
Rob N. Candler ◽  
Matthew A. Hopcroft ◽  
Manu Agarwal ◽  
Woo-Tae Park ◽  
...  

Science ◽  
2018 ◽  
Vol 362 (6415) ◽  
pp. 665-670 ◽  
Author(s):  
Jaewoo Shim ◽  
Sang-Hoon Bae ◽  
Wei Kong ◽  
Doyoon Lee ◽  
Kuan Qiao ◽  
...  

Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a trial-and-error process. Controlling the number of 2D layers through direct growth also presents difficulty because of the high nucleation barrier on 2D materials. We demonstrate a layer-resolved 2D material splitting technique that permits high-throughput production of multiple monolayers of wafer-scale (5-centimeter diameter) 2D materials by splitting single stacks of thick 2D materials grown on a single wafer. Wafer-scale uniformity of hexagonal boron nitride, tungsten disulfide, tungsten diselenide, molybdenum disulfide, and molybdenum diselenide monolayers was verified by photoluminescence response and by substantial retention of electronic conductivity. We fabricated wafer-scale van der Waals heterostructures, including field-effect transistors, with single-atom thickness resolution.


1988 ◽  
Vol 135 (6) ◽  
pp. 281
Author(s):  
J.B. Butcher ◽  
K.K. Johnstone

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley

Sign in / Sign up

Export Citation Format

Share Document