scholarly journals Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

Science ◽  
2018 ◽  
Vol 362 (6415) ◽  
pp. 665-670 ◽  
Author(s):  
Jaewoo Shim ◽  
Sang-Hoon Bae ◽  
Wei Kong ◽  
Doyoon Lee ◽  
Kuan Qiao ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Electronic Conductivity ◽  
Single Atom ◽  
Adhesive Tape ◽  
Two Dimensional ◽  
Wafer Scale ◽  
Splitting Technique ◽  
Direct Growth

Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a trial-and-error process. Controlling the number of 2D layers through direct growth also presents difficulty because of the high nucleation barrier on 2D materials. We demonstrate a layer-resolved 2D material splitting technique that permits high-throughput production of multiple monolayers of wafer-scale (5-centimeter diameter) 2D materials by splitting single stacks of thick 2D materials grown on a single wafer. Wafer-scale uniformity of hexagonal boron nitride, tungsten disulfide, tungsten diselenide, molybdenum disulfide, and molybdenum diselenide monolayers was verified by photoluminescence response and by substantial retention of electronic conductivity. We fabricated wafer-scale van der Waals heterostructures, including field-effect transistors, with single-atom thickness resolution.

Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors

2019 ◽  
Vol 7 (47) ◽  
pp. 14999-15006 ◽  
Author(s):  
Menglei Gao ◽  
Junhua Meng ◽  
Yanan Chen ◽  
Siyuan Ye ◽  
Ye Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Wafer Scale ◽  
Sapphire Substrates ◽  
Catalyst Free ◽  
Deep Ultraviolet ◽  
Free Growth ◽  
Ultraviolet Photodetectors

Catalyst-free growth of wafer-scale h-BN few-layers is realized on sapphire substrates by the combination of surface nitridation and N+ sputtering.

Reversible photo-induced doping in WSe2 field effect transistors

Nanoscale ◽  
2019 ◽  
Vol 11 (15) ◽  
pp. 7358-7363 ◽  
Author(s):  
Xuyi Luo ◽  
Kraig Andrews ◽  
Tianjiao Wang ◽  
Arthur Bowman ◽  
Zhixian Zhou ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Visible Light ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Light Illumination ◽  
Two Dimensional ◽  
Tungsten Diselenide ◽  
Low Intensity ◽  
Visible Light Illumination

We report a reversible photo-induced doping effect in two-dimensional (2D) tungsten diselenide (WSe2) field effect transistors on hexagonal boron nitride (h-BN) substrates under low-intensity visible light illumination (∼10 nW μm−2).

scholarly journals Plasmonic 2D Materials: Overview, Advancements, Future Prospects and Functional Applications

2021 ◽  
Author(s):  
Muhammad Aamir Iqbal ◽  
Maria Malik ◽  
Wajeehah Shahid ◽  
Waqas Ahmad ◽  
Kossi A. A. Min-Dianey ◽  
...  
Keyword(s):  
Surface Plasmons ◽  
Light Emission ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Optoelectronic Device ◽  
Two Dimensional ◽  
Graphene Oxides ◽  
Plasmonic Materials ◽  
Energy Applications ◽  
Device Applications

Plasmonics is a technologically advanced term in condensed matter physics that describes surface plasmon resonance where surface plasmons are collective electron oscillations confined at the dielectric-metal interface and these collective excitations exhibit profound plasmonic properties in conjunction with light interaction. Surface plasmons are based on nanomaterials and their structures; therefore, semiconductors, metals, and two-dimensional (2D) nanomaterials exhibit distinct plasmonic effects due to unique confinements. Recent technical breakthroughs in characterization and material manufacturing of two-dimensional ultra-thin materials have piqued the interest of the materials industry because of their extraordinary plasmonic enhanced characteristics. The 2D plasmonic materials have great potential for photonic and optoelectronic device applications owing to their ultra-thin and strong light-emission characteristics, such as; photovoltaics, transparent electrodes, and photodetectors. Also, the light-driven reactions of 2D plasmonic materials are environmentally benign and climate-friendly for future energy generations which makes them extremely appealing for energy applications. This chapter is aimed to cover recent advances in plasmonic 2D materials (graphene, graphene oxides, hexagonal boron nitride, pnictogens, MXenes, metal oxides, and non-metals) as well as their potential for applied applications, and is divided into several sections to elaborate recent theoretical and experimental developments along with potential in photonics and energy storage industries.

scholarly journals Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Arne Quellmalz ◽  
Xiaojing Wang ◽  
Simon Sawallich ◽  
Burkay Uzlu ◽  
Martin Otto ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Semiconductor Manufacturing ◽  
Large Scale ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
High Volume ◽  
Two Dimensional ◽  
Wafer Level ◽  
Large Area ◽  
Wide Range

AbstractIntegrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume manufacturing on wafer level. Here, we report a generic methodology for large-area integration of 2D materials by adhesive wafer bonding. Our approach avoids manual handling and uses equipment, processes, and materials that are readily available in large-scale semiconductor manufacturing lines. We demonstrate the transfer of CVD graphene from copper foils (100-mm diameter) and molybdenum disulfide (MoS2) from SiO2/Si chips (centimeter-sized) to silicon wafers (100-mm diameter). Furthermore, we stack graphene with CVD hexagonal boron nitride and MoS2 layers to heterostructures, and fabricate encapsulated field-effect graphene devices, with high carrier mobilities of up to $$4520\;{\mathrm{cm}}^2{\mathrm{V}}^{ - 1}{\mathrm{s}}^{ - 1}$$ 4520 cm 2 V − 1 s − 1 . Thus, our approach is suited for backend of the line integration of 2D materials on top of integrated circuits, with potential to accelerate progress in electronics, photonics, and sensing.

scholarly journals Two-Dimensional Tellurium: Progress, Challenges, and Prospects

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Zhe Shi ◽  
Rui Cao ◽  
Karim Khan ◽  
Ayesha Khan Tareen ◽  
Xiaosong Liu ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
2D Materials ◽  
Environmental Stability ◽  
Synthesis Methods ◽  
Two Dimensional ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Energy Harvesting Devices ◽  
Further Development ◽  
Piezoelectric Devices

AbstractSince the successful fabrication of two-dimensional (2D) tellurium (Te) in 2017, its fascinating properties including a thickness dependence bandgap, environmental stability, piezoelectric effect, high carrier mobility, and photoresponse among others show great potential for various applications. These include photodetectors, field-effect transistors, piezoelectric devices, modulators, and energy harvesting devices. However, as a new member of the 2D material family, much less known is about 2D Te compared to other 2D materials. Motivated by this lack of knowledge, we review the recent progress of research into 2D Te nanoflakes. Firstly, we introduce the background and motivation of this review. Then, the crystal structures and synthesis methods are presented, followed by an introduction to their physical properties and applications. Finally, the challenges and further development directions are summarized. We believe that milestone investigations of 2D Te nanoflakes will emerge soon, which will bring about great industrial revelations in 2D materials-based nanodevice commercialization.

scholarly journals Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xinyu Chen ◽  
Yufeng Xie ◽  
Yaochen Sheng ◽  
Hongwei Tang ◽  
Zeming Wang ◽  
...  
Keyword(s):  
Machine Learning ◽  
Electronic Materials ◽  
Field Effect Transistors ◽  
Full Adder ◽  
Two Dimensional ◽  
Wafer Scale ◽  
Industry Standard ◽  
Standard Design ◽  
Application Potential ◽  
Industrial Standards

AbstractTriggered by the pioneering research on graphene, the family of two-dimensional layered materials (2DLMs) has been investigated for more than a decade, and appealing functionalities have been demonstrated. However, there are still challenges inhibiting high-quality growth and circuit-level integration, and results from previous studies are still far from complying with industrial standards. Here, we overcome these challenges by utilizing machine-learning (ML) algorithms to evaluate key process parameters that impact the electrical characteristics of MoS2 top-gated field-effect transistors (FETs). The wafer-scale fabrication processes are then guided by ML combined with grid searching to co-optimize device performance, including mobility, threshold voltage and subthreshold swing. A 62-level SPICE modeling was implemented for MoS2 FETs and further used to construct functional digital, analog, and photodetection circuits. Finally, we present wafer-scale test FET arrays and a 4-bit full adder employing industry-standard design flows and processes. Taken together, these results experimentally validate the application potential of ML-assisted fabrication optimization for beyond-silicon electronic materials.

scholarly journals Wafer-Scale Functional Circuits Based on Two Dimensional Semiconductors with Fabrication Optimized by Machine Learning

2021 ◽  
Author(s):  
Xinyu Chen ◽  
Yufeng Xie ◽  
Yaochen Sheng ◽  
Hongwei Tang ◽  
Zeming Wang ◽  
...  
Keyword(s):  
Machine Learning ◽  
Electronic Materials ◽  
Field Effect Transistors ◽  
Full Adder ◽  
Two Dimensional ◽  
Wafer Scale ◽  
Industry Standard ◽  
Standard Design ◽  
Application Potential ◽  
Industrial Standards

Abstract Triggered by the pioneering research on graphene, the family of two-dimensional layered materials (2DLMs) has been investigated for more than a decade, and appealing functionalities have been demonstrated. However, there are still challenges inhibiting high-quality growth and circuit-level integration, and results from previous studies are still far from complying with industrial standards. Here, we overcome these challenges by utilizing machine-learning (ML) algorithms to evaluate key process parameters that impact the electrical characteristics of MoS2 top-gated field-effect transistors (FETs). The wafer-scale fabrication processes are then guided by ML combined with grid searching to co-optimize device performance, including mobility, threshold voltage and subthreshold swing. A 62-level SPICE modeling was implemented for MoS2 FETs and further used to construct functional digital, analog, and photodetection circuits. Finally, we present wafer-scale test FET arrays and a 4-bit full adder employing industry-standard design flows and processes. Taken together, these results experimentally validate the application potential of ML-assisted fabrication optimization for beyond-silicon electronic materials.

scholarly journals Overview of Rational Design of Binary Alloy for the Synthesis of Two-Dimensional Materials

Surfaces ◽  
2020 ◽  
Vol 3 (1) ◽  
pp. 26-39
Author(s):  
Hongyan Zhu ◽  
Chao Zhang ◽  
Xuefu Zhang ◽  
Zhiyuan Shi ◽  
Tianru Wu ◽  
...  
Keyword(s):  
Transition Metal ◽  
Rational Design ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Domain Size ◽  
Two Dimensional ◽  
Practical Applications ◽  
Metal Catalyzed

Two-dimensional (2D) materials attracted widespread interest as unique and novel properties different from their bulk crystals, providing great potential for semiconductor devices and applications. Recently, the family of 2D materials has been expanded including but not limited to graphene, hexagonal boron nitride (h-BN), transition metal carbides (TMCs), and transition metal dichalcogenides (TMDCs). Metal-catalyzed chemical vapor deposition (CVD) is an effective method to achieve precise synthesis of these 2D materials. In this review, we focus on designing various binary alloys to realize controllable synthesis of multiple CVD-grown 2D materials and their heterostructures for both fundamental research and practical applications. Further investigations indicated that the design of the catalytic substrate is an important issue, which determines the morphology, domain size, thickness and quality of 2D materials and their heterostructures.

scholarly journals Direct Growth of Two Dimensional Molybdenum Disulfide on Flexible Ceramic Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1456 ◽  
Author(s):  
Yixiong Zheng ◽  
Chunyan Yuan ◽  
Sichen Wei ◽  
Hyun Kim ◽  
Fei Yao ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
High Performance ◽  
Crystal Size ◽  
2D Materials ◽  
Flexible Substrate ◽  
Ceramic Substrate ◽  
Zirconia Ceramic ◽  
Two Dimensional ◽  
Stable Chemical ◽  
Direct Growth

In this paper, we report the first successful demonstration of the direct growth of high-quality two-dimensional (2D) MoS2 semiconductors on a flexible substrate using a 25-μm-thick Yttria-stabilized zirconia ceramic substrate. Few-layered MoS2 crystals grown at 800 °C showed a uniform crystal size of approximately 50 μm, which consisted of about 10 MoS2 layers. MoS2 crystals were characterized using energy-dispersive X-ray spectroscopy. Raman spectroscopy was performed to investigate the crystal quality under bending conditions. The Raman mapping revealed a good uniformity with a stable chemical composition of the MoS2 crystals. Our approach offers a simple and effective route to realize various flexible electronics based on MoS2.Our approach can be applied for MoS2 growth and for other 2D materials. Therefore, it offers a new opportunity that allows us to demonstrate high-performance flexible electronic/optoelectronic applications in a less expensive, simpler, and faster manner without sacrificing the intrinsic performance of 2D materials.

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