Wafer Scale Formation of Monocrystalline Silicon-Based Mie ResonatorsviaSilicon-on-Insulator Dewetting

ACS Nano ◽  
2014 ◽  
Vol 8 (11) ◽  
pp. 11181-11190 ◽  
Author(s):  
Marco Abbarchi ◽  
Meher Naffouti ◽  
Benjamin Vial ◽  
Abdelmalek Benkouider ◽  
Laurent Lermusiaux ◽  
...  
Keyword(s):  
Scale Formation ◽  
Monocrystalline Silicon ◽  
Wafer Scale ◽  
Silicon Based

Study on polishing slurry waste reduction in polishing monocrystalline silicon based on ultrasonic atomization

2019 ◽  
Vol 233 ◽  
pp. 1-12 ◽  
Author(s):  
Tianqi Zhang ◽  
Yu Zhao ◽  
Tao Yu ◽  
Tianbiao Yu ◽  
Jiashun Shi ◽  
...  
Keyword(s):  
Monocrystalline Silicon ◽  
Waste Reduction ◽  
Ultrasonic Atomization ◽  
Silicon Based

scholarly journals Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

2018 ◽  
Vol 8 (12) ◽  
pp. 1702221 ◽  
Author(s):  
Rabab R. Bahabry ◽  
Arwa T. Kutbee ◽  
Sherjeel M. Khan ◽  
Adrian C. Sepulveda ◽  
Irmandy Wicaksono ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Monocrystalline Silicon ◽  
Wafer Scale

scholarly journals Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon

2021 ◽  
Vol 2021 ◽  
pp. 1-17
Author(s):  
Ying Chang ◽  
Saisai He ◽  
Mingyuan Sun ◽  
Aixia Xiao ◽  
Jiaxin Zhao ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Theoretical Model ◽  
Scattered Light ◽  
Industrial Applications ◽  
Monocrystalline Silicon ◽  
Raman Intensity ◽  
Angle Rotation ◽  
Polarized Raman ◽  
Silicon Based ◽  
Quantified Analysis

Monocrystalline silicon (c-Si) is still an important material related to microelectronics/optoelectronics. The nondestructive measurement of the c-Si material and its microstructure is commonly required in scientific research and industrial applications, for which Raman spectroscopy is an indispensable method. However, Raman measurements based on the specific fixed Raman geometry/polarization configuration are limited for the quantified analysis of c-Si performance, which makes it difficult to meet the high-end requirements of advanced silicon-based microelectronics and optoelectronics. Angle-resolved Raman measurements have become a new trend of experimental analysis in the field of materials, physics, mechanics, and optics. In this paper, the characteristics of the angle-resolved polarized Raman scattering of c-Si under the in-axis and off-axis configurations are systematically analyzed. A general theoretical model of the angle-resolved Raman intensity is established, which includes several alterable angle parameters, including the inclination angle, rotation angle of the sample, and polarization directions of the incident laser and scattered light. The diversification of the Raman intensity is given at different angles for various geometries and polarization configurations. The theoretical model is verified and calibrated by typical experiments. In addition, this work provides a reliable basis for the analysis of complex polarized Raman experiments on silicon-based structures.

scholarly journals Solar Cells: Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell (Adv. Energy Mater. 12/2018)

2018 ◽  
Vol 8 (12) ◽  
pp. 1870055
Author(s):  
Rabab R. Bahabry ◽  
Arwa T. Kutbee ◽  
Sherjeel M. Khan ◽  
Adrian C. Sepulveda ◽  
Irmandy Wicaksono ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Monocrystalline Silicon ◽  
Wafer Scale ◽  
Energy Mater

Monocrystalline silicon-based tandem configuration for solar-to-hydrogen conversion

2020 ◽  
Vol 116 ◽  
pp. 107926
Author(s):  
Duy Phong Pham ◽  
Sunhwa Lee ◽  
Anh Huy Tuan Le ◽  
Eun-Chel Cho ◽  
Young Hyun Cho ◽  
...  
Keyword(s):  
Monocrystalline Silicon ◽  
Tandem Configuration ◽  
Silicon Based

Porous silicon-based microtexturing of textured monocrystalline silicon solar cells

2010 ◽  
Vol 8 (6) ◽  
pp. 1869-1873 ◽  
Author(s):  
Moncef Saadoun ◽  
Mohamed Fethi Boujmil ◽  
Selma Aouida ◽  
Mohamed Ben Rabha ◽  
Brahim Bessaïs
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Monocrystalline Silicon ◽  
Silicon Solar Cells ◽  
Silicon Based

scholarly journals Research on a UV-assisted chemical modification strategy for monocrystalline silicon

2021 ◽  
Vol 12 (1) ◽  
pp. 133-141
Author(s):  
Yinghui Ren ◽  
Kexin Li ◽  
Wei Li ◽  
Xu Han ◽  
Xiaoman Liu
Keyword(s):  
Chemical Modification ◽  
Inductively Coupled Plasma ◽  
Scratch Test ◽  
Monocrystalline Silicon ◽  
Nanoindentation Test ◽  
Inductively Coupled ◽  
Plasma Mass Spectrometry ◽  
Modified Layer ◽  
Silicon Based ◽  
Raman Spectral

Abstract. A novel UV-assisted chemical modification (UVA-CM) strategy is proposed for micro-grinding monocrystalline silicon based on UV photocatalysis theory in order to develop a combined machining technology. Comparative experiments are carried out between a single heating chemical modification (H-CM) strategy and a hybrid UVA-CM strategy. The effects of different modification strategies on modification degree and mechanical properties of a modified layer are evaluated by inductively coupled plasma mass spectrometry (ICP), Raman spectral analysis, nanoindentation test, and scratch test. The experimental results show that silicate substance is generated on the modified layer surface via the UVA-CM technique. The modified layer under UVA-CM is thicker than that under the H-CM strategy, which also presents relatively lower nanohardness. With the same scratch condition, the modified layer under UVA-CM contributes to inhibiting lateral crack propagation. It is demonstrated that the liquid–solid chemical modification effect is obviously enhanced through UV advanced oxidation reaction. The UVA-CM strategy will contribute to developing a novel hybrid chemo-mechanical process for micro-grinding monocrystalline silicon.

Raman Analysis of the Silicon Wafer Scratched by Single Point Diamond

2011 ◽  
Vol 175 ◽  
pp. 82-86
Author(s):  
Zhuo Chen ◽  
Xin Wei ◽  
Xiao Zhu Xie ◽  
Qing Lei Ren
Keyword(s):  
Mathematical Model ◽  
Phase Transformation ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Applied Load ◽  
Single Point ◽  
Monocrystalline Silicon ◽  
Raman Analysis ◽  
Silicon Based ◽  
The Relationship

This paper presents a Raman analysis of the monocrystalline silicon wafer scratched by single point diamond. Si-III and Si-XII phases are found to be existence in the scratched silicon surface, which is the result of the phase transformation. A mathematical model was developed to calculating the molar concentration of phase of the silicon. Based on the mathemathical model, the relationship between the molar concentrations of the Si-I phase and the applied load was analysied.

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