Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride

2018 ◽  
Vol 10 (13) ◽  
pp. 11101-11107 ◽  
Author(s):  
David Choi ◽  
Nirakar Poudel ◽  
Saungeun Park ◽  
Deji Akinwande ◽  
Stephen B. Cronin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Hot Spot ◽  
Electronic Devices ◽  
Large Reduction ◽  
Heat Spreading ◽  
Spot Temperature

Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility Transistors

2020 ◽  
Vol 20 (7) ◽  
pp. 4450-4453 ◽  
Author(s):  
Gun Hee Lee ◽  
Ah Hyun Park ◽  
Jin Hong Lim ◽  
Chil-Hyoung Lee ◽  
Dae-Woo Jeon ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Mobility ◽  
Hexagonal Boron Nitride ◽  
Electronic Devices ◽  
Charge Trapping ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Capping Layer ◽  
Electron Mobility Transistors

We report on the electrical characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with hexagonal boron nitride (h-BN) as a passivation capping layer. The HEMTs with h-BN layers showed an increase in current drainage and 103-times reduction in the gate-leakage current compared with those of conventional unpassivated HEMTs. Moreover, the extrinsic transconductance and the pulse responses were improved due to the reduced charge-trapping effect at the surface of HEMTs. From our observations, the h-BN can be used as a passivation capping layer for high-power electronic devices.

Antimicrobial hexagonal boron nitride nanoplatelet composites for the thermal management of medical electronic devices

2019 ◽  
Vol 3 (11) ◽  
pp. 2455-2462 ◽  
Author(s):  
Si-Wei Xiong ◽  
Pan Zhang ◽  
Yu Xia ◽  
Pei-Gen Fu ◽  
Jing-Gang Gai
Keyword(s):  
Thermal Conductivity ◽  
Boron Nitride ◽  
Thermal Management ◽  
Hexagonal Boron Nitride ◽  
Electronic Devices ◽  
E Coli ◽  
Thermally Conductive ◽  
Medical Electronic

We developed a thermally conductive and antimicrobial QACs@h-BN/LLDPE composites for thermal management of medically electronic devices, it was approximately 100% against both E. coli and S. aureus and its thermal conductivity can reach 1.115 W m−1 K−1.

scholarly journals Energetic and thermal properties of tilt grain boundaries in graphene/hexagonal boron nitride heterostructures

2015 ◽  
Vol 08 (03) ◽  
pp. 1550038 ◽  
Author(s):  
Mingchao Wang ◽  
Guangping Zhang ◽  
Huisheng Peng ◽  
Cheng Yan
Keyword(s):  
Thermal Properties ◽  
Boron Nitride ◽  
Grain Boundaries ◽  
Hexagonal Boron Nitride ◽  
Electronic Devices ◽  
Thermal Conductance ◽  
Interfacial Thermal Conductance ◽  
Non Equilibrium Molecular Dynamics ◽  
Dynamics Simulations ◽  
Misorientation Angles

Graphene/hexagonal boron nitride (G/h-BN) heterostructure has attracted tremendous research efforts owing to its great potential for applications in nanoscale electronic devices. In such hybrid materials, tilt grain boundaries (GBs) between graphene and h-BN grains may have unique physical properties, which have not been well understood. Here we have conducted non-equilibrium molecular dynamics simulations to study the energetic and thermal properties of tilt GBs in G/h-BN heterostructures. The effect of misorientation angles of tilt GBs on both GB energy and interfacial thermal conductance are investigated.

scholarly journals One-dimensional hexagonal boron nitride conducting channel

2020 ◽  
Vol 6 (10) ◽  
pp. eaay4958 ◽  
Author(s):  
Hyo Ju Park ◽  
Janghwan Cha ◽  
Min Choi ◽  
Jung Hwa Kim ◽  
Roland Yingjie Tay ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Electronic Devices ◽  
Chemical Vapor ◽  
Conducting Channel ◽  
Twin Boundaries ◽  
One Dimensional ◽  
Potential Use

Hexagonal boron nitride (hBN) is an insulating two-dimensional (2D) material with a large bandgap. Although known for its interfacing with other 2D materials and structural similarities to graphene, the potential use of hBN in 2D electronics is limited by its insulating nature. Here, we report atomically sharp twin boundaries at AA′/AB stacking boundaries in chemical vapor deposition–synthesized few-layer hBN. We find that the twin boundary is composed of a 6′6′ configuration, showing conducting feature with a zero bandgap. Furthermore, the formation mechanism of the atomically sharp twin boundaries is suggested by an analogy with stacking combinations of AA′/AB based on the observations of extended Klein edges at the layer boundaries of AB-stacked hBN. The atomically sharp AA′/AB stacking boundary is promising as an ultimate 1D electron channel embedded in insulating pristine hBN. This study will provide insights into the fabrication of single-hBN electronic devices.

scholarly journals A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu–Ni gradient enclosure

RSC Advances ◽  
2020 ◽  
Vol 10 (27) ◽  
pp. 16088-16093
Author(s):  
Tianyu Zhu ◽  
Yao Liang ◽  
Chitengfei Zhang ◽  
Zegao Wang ◽  
Mingdong Dong ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Boron Nitride ◽  
Mechanical Strength ◽  
Single Crystal ◽  
High Throughput ◽  
Hexagonal Boron Nitride ◽  
Electronic Devices ◽  
Two Dimensional ◽  
Excellent Thermal Stability ◽  
High Mechanical Strength

Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength.

Self-Aligned Single-Crystalline Hexagonal Boron Nitride Arrays: Toward Higher Integrated Electronic Devices

2015 ◽  
Vol 1 (11) ◽  
pp. 1500223 ◽  
Author(s):  
Lifang Tan ◽  
Jiangli Han ◽  
Rafael G. Mendes ◽  
Mark H. Rümmeli ◽  
Jinxin Liu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Electronic Devices ◽  
Single Crystalline
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