Self-Aligned Single-Crystalline Hexagonal Boron Nitride Arrays: Toward Higher Integrated Electronic Devices

2015 ◽  
Vol 1 (11) ◽  
pp. 1500223 ◽  
Author(s):  
Lifang Tan ◽  
Jiangli Han ◽  
Rafael G. Mendes ◽  
Mark H. Rümmeli ◽  
Jinxin Liu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Electronic Devices ◽  
Single Crystalline

scholarly journals Quantum Emission from Defects in Single-Crystalline Hexagonal Boron Nitride

2016 ◽  
Vol 5 (3) ◽  
Author(s):  
Toan Trong Tran ◽  
Cameron Zachreson ◽  
Amanuel Michael Berhane ◽  
Kerem Bray ◽  
Russell Guy Sandstrom ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Single Crystalline

Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility Transistors

2020 ◽  
Vol 20 (7) ◽  
pp. 4450-4453 ◽  
Author(s):  
Gun Hee Lee ◽  
Ah Hyun Park ◽  
Jin Hong Lim ◽  
Chil-Hyoung Lee ◽  
Dae-Woo Jeon ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Mobility ◽  
Hexagonal Boron Nitride ◽  
Electronic Devices ◽  
Charge Trapping ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Capping Layer ◽  
Electron Mobility Transistors

We report on the electrical characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with hexagonal boron nitride (h-BN) as a passivation capping layer. The HEMTs with h-BN layers showed an increase in current drainage and 103-times reduction in the gate-leakage current compared with those of conventional unpassivated HEMTs. Moreover, the extrinsic transconductance and the pulse responses were improved due to the reduced charge-trapping effect at the surface of HEMTs. From our observations, the h-BN can be used as a passivation capping layer for high-power electronic devices.

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate

2020 ◽  
Vol 12 (41) ◽  
pp. 46466-46475
Author(s):  
Xu Yang ◽  
Markus Pristovsek ◽  
Shugo Nitta ◽  
Yuhuai Liu ◽  
Yoshio Honda ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Single Crystalline ◽  
Diamond Substrate

Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation

Science ◽  
2018 ◽  
Vol 362 (6416) ◽  
pp. 817-821 ◽  
Author(s):  
Joo Song Lee ◽  
Soo Ho Choi ◽  
Seok Joon Yun ◽  
Yong In Kim ◽  
Stephen Boandoh ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Performance ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Monolayer Films ◽  
Single Crystalline ◽  
Wafer Scale ◽  
Liquid Gold ◽  
Grain Formation

Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide.

Antimicrobial hexagonal boron nitride nanoplatelet composites for the thermal management of medical electronic devices

2019 ◽  
Vol 3 (11) ◽  
pp. 2455-2462 ◽  
Author(s):  
Si-Wei Xiong ◽  
Pan Zhang ◽  
Yu Xia ◽  
Pei-Gen Fu ◽  
Jing-Gang Gai
Keyword(s):  
Thermal Conductivity ◽  
Boron Nitride ◽  
Thermal Management ◽  
Hexagonal Boron Nitride ◽  
Electronic Devices ◽  
E Coli ◽  
Thermally Conductive ◽  
Medical Electronic

We developed a thermally conductive and antimicrobial QACs@h-BN/LLDPE composites for thermal management of medically electronic devices, it was approximately 100% against both E. coli and S. aureus and its thermal conductivity can reach 1.115 W m−1 K−1.

scholarly journals Growth of Large Single-Crystalline Monolayer Hexagonal Boron Nitride by Oxide-Assisted Chemical Vapor Deposition

2017 ◽  
Vol 29 (15) ◽  
pp. 6252-6260 ◽  
Author(s):  
Ren-Jie Chang ◽  
Xiaochen Wang ◽  
Shanshan Wang ◽  
Yuewen Sheng ◽  
Ben Porter ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Single Crystalline

scholarly journals Energetic and thermal properties of tilt grain boundaries in graphene/hexagonal boron nitride heterostructures

2015 ◽  
Vol 08 (03) ◽  
pp. 1550038 ◽  
Author(s):  
Mingchao Wang ◽  
Guangping Zhang ◽  
Huisheng Peng ◽  
Cheng Yan
Keyword(s):  
Thermal Properties ◽  
Boron Nitride ◽  
Grain Boundaries ◽  
Hexagonal Boron Nitride ◽  
Electronic Devices ◽  
Thermal Conductance ◽  
Interfacial Thermal Conductance ◽  
Non Equilibrium Molecular Dynamics ◽  
Dynamics Simulations ◽  
Misorientation Angles

Graphene/hexagonal boron nitride (G/h-BN) heterostructure has attracted tremendous research efforts owing to its great potential for applications in nanoscale electronic devices. In such hybrid materials, tilt grain boundaries (GBs) between graphene and h-BN grains may have unique physical properties, which have not been well understood. Here we have conducted non-equilibrium molecular dynamics simulations to study the energetic and thermal properties of tilt GBs in G/h-BN heterostructures. The effect of misorientation angles of tilt GBs on both GB energy and interfacial thermal conductance are investigated.

scholarly journals Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Shujie Tang ◽  
Haomin Wang ◽  
Hui Shan Wang ◽  
Qiujuan Sun ◽  
Xiuyun Zhang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Fast Growth ◽  
Single Crystalline
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