Single-Crystal Arrays: Self-Aligned Single-Crystalline Hexagonal Boron Nitride Arrays: Toward Higher Integrated Electronic Devices (Adv. Electron. Mater. 11/2015)

2015 ◽  
Vol 1 (11) ◽  
pp. n/a-n/a
Author(s):  
Lifang Tan ◽  
Jiangli Han ◽  
Rafael G. Mendes ◽  
Mark H. Rümmeli ◽  
Jinxin Liu ◽  
...  
RSC Advances ◽  
2020 ◽  
Vol 10 (27) ◽  
pp. 16088-16093
Author(s):  
Tianyu Zhu ◽  
Yao Liang ◽  
Chitengfei Zhang ◽  
Zegao Wang ◽  
Mingdong Dong ◽  
...  

Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength.


2015 ◽  
Vol 1 (11) ◽  
pp. 1500223 ◽  
Author(s):  
Lifang Tan ◽  
Jiangli Han ◽  
Rafael G. Mendes ◽  
Mark H. Rümmeli ◽  
Jinxin Liu ◽  
...  

Author(s):  
Yanwei He ◽  
Yuan Li ◽  
Miguel Isarraraz ◽  
Pedro Pena ◽  
Jason Tran ◽  
...  

Nature ◽  
2020 ◽  
Vol 579 (7798) ◽  
pp. 219-223 ◽  
Author(s):  
Tse-An Chen ◽  
Chih-Piao Chuu ◽  
Chien-Chih Tseng ◽  
Chao-Kai Wen ◽  
H.-S. Philip Wong ◽  
...  

2016 ◽  
Vol 5 (3) ◽  
Author(s):  
Toan Trong Tran ◽  
Cameron Zachreson ◽  
Amanuel Michael Berhane ◽  
Kerem Bray ◽  
Russell Guy Sandstrom ◽  
...  

2020 ◽  
Vol 20 (7) ◽  
pp. 4450-4453 ◽  
Author(s):  
Gun Hee Lee ◽  
Ah Hyun Park ◽  
Jin Hong Lim ◽  
Chil-Hyoung Lee ◽  
Dae-Woo Jeon ◽  
...  

We report on the electrical characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with hexagonal boron nitride (h-BN) as a passivation capping layer. The HEMTs with h-BN layers showed an increase in current drainage and 103-times reduction in the gate-leakage current compared with those of conventional unpassivated HEMTs. Moreover, the extrinsic transconductance and the pulse responses were improved due to the reduced charge-trapping effect at the surface of HEMTs. From our observations, the h-BN can be used as a passivation capping layer for high-power electronic devices.


2011 ◽  
Vol 5 (5-6) ◽  
pp. 214-216 ◽  
Author(s):  
L. Museur ◽  
G. Brasse ◽  
A. Pierret ◽  
S. Maine ◽  
B. Attal-Tretout ◽  
...  

2020 ◽  
Vol 12 (41) ◽  
pp. 46466-46475
Author(s):  
Xu Yang ◽  
Markus Pristovsek ◽  
Shugo Nitta ◽  
Yuhuai Liu ◽  
Yoshio Honda ◽  
...  

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